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  • 11
    Electronic Resource
    Electronic Resource
    The gettering of copper by keV implantation of germanium into silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3012-3014 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gettering of copper by keV implantation of germanium into silicon is investigated. Germanium is implanted at a fixed energy with varying doses into the front side of silicon samples. Copper is thermally evaporated on the backside of the samples and then annealed at 900 °C for 1 h and 10 h, respectively, to allow in-diffusion of the transition metal. Rutherford backscattering spectroscopy, secondary-ion-mass spectroscopy, and cross-section transmission electron microscopy are used to demonstrate that gettering of copper is achieved through stacking faults created by heavy dose germanium implantation and solid-phase epitaxy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360050
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  • 12
    Electronic Resource
    Electronic Resource
    Multichannel interferometer system for the helically symmetric experiment : Papers from the thirteenth topical conference on high temperature plasma diagnostics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1081-1084 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A multichannel millimeter-wave interferometer system has been designed, fabricated and installed on the helically symmetric experiment (HSX), located at the University of Wisconsin, Madison. The interferometer system will view the plasma cross section along nine adjacent chords with 1.5 cm spacing. With this arrangement, coverage will span from the low-field side plasma scrape-off layer to well past the magnetic axis. For the plasma densities anticipated on HSX, a solid-state source operating at 288 GHz will be utilized. At this frequency refraction will be manageable, being less than the channel spacing. The source will be bias-tuned and modulated with a sawtooth wave form at 750 kHz in order to generate the intermediate frequency necessary for the heterodyne detection scheme. The signals will be measured using Schottky-diode corner-cube mixers. The interferometer will have sensitivity nedl(approximate)8×1011 cm−2, being able to measure density changes 〈1%. Initially, the phase will be evaluated using analog electronics with bandwidth 〈10 kHz providing real-time line-integrated output. A digital phase comparator scheme will also be implemented whereby the measured wave forms are directly digitized and the phase evaluated using a software-based algorithm. This will increase the time response up to the modulation frequency of 750 kHz. Improved time response will permit measurement of high-frequency density fluctuations along with "fast changes in" the equilibrium profile. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319366
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  • 13
    Electronic Resource
    Electronic Resource
    Formation and characterization of ultrasmall dimension GeSi wire structure by using pulsed laser-induced epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3734-3736 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (100)Si substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. Ultrasmall dimension GeSi surface wire structures are then formed in Si in a pulsed laser-induced epitaxy process. The wire structures are analyzed by secondary electron microscopy, atomic force microscopy, Auger electron spectroscopy, and cross-sectional transmission electron microscopy. No defects are observed in the wires structures. However, significant side diffusion of Ge, much more than the vertical diffusion occurred during the ∼40 ns pulsed laser-induced epitaxy process, is observed in the Si substrate. Surface evolution is also observed. Possible explanations for the abnormal Ge side diffusion are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115989
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  • 14
    Electronic Resource
    Electronic Resource
    Separation and determination of trace amounts of vanadium(V), chromium(III) and iron(III) with 2-(2-thienylazo)-5-diethylaminophenol chelates by high-performance liquid chromatography
    Amsterdam : Elsevier
    Journal of Chromatography A 598 (1992), S. 298-302 
    Details
    ISSN: 0021-9673
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0021-9673(92)85059-3
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  • 15
    Electronic Resource
    Electronic Resource
    Theoretical studies of carbenes and carbenoids. 5. Intramolecular reactions of cyclopropylcarbene
    Amsterdam : Elsevier
    Tetrahedron 44 (1988), S. 7355-7362 
    Details
    ISSN: 0040-4020
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0040-4020(01)86230-X
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  • 16
    Electronic Resource
    Electronic Resource
    Theoretical studies on the structures and reactivity of silylenoids. III. The structures and isomerization of silylenoid H"2SiNaF
    Amsterdam : Elsevier
    Chemical Physics Letters 214 (1993), S. 97-102 
    Details
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-2614(93)85461-V
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  • 17
    Electronic Resource
    Electronic Resource
    Optimising the number and position of the measuring points on a plane curve using an algorithm for comparing the angle between the normal directions (1996)
    Springer
    The international journal of advanced manufacturing technology 12 (1996), S. 103-110 
    Details
    ISSN: 1433-3015
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The purpose of this study is to investigate the determination of the number and location of measuring points for a plane curve using a coordinate measuring machine in order to reduce the time taken to measure the curve. The study begins by establishing the data points for a plane curve on the design blueprint, and then proposes an algorithm for comparing the angle between the two normal directions. The angle can be used in conjunction with the preset allowance distance error value to determine which positions of the measuring points are better, and to reduce the number of measuring points. A cubic spline curve is adopted as the measuring curve so that all derived points fall on the cubic spline to meet the requirement of integrating real measuring and the computer-aided drafting.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01178950
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  • 18
    Electronic Resource
    Electronic Resource
    Fabrication and doping of poly-SiGe using excimer-laser processing (1994)
    Springer
    Applied physics 59 (1994), S. 203-207 
    Details
    ISSN: 1432-0630
    Keywords: 73.40.Lq ; 73.61.Le ; 85.30.Kk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Pulsed Laser-Induced Epitaxy (PLIE)/Gas Immersion Laser Doping (GILD) offers several advantages over alternative epitaxial processes, especially because the process can be made spatially selective. Here, a pulsed XeCl excimer laser is used to grow poly-Si1−xGex layers with Ge fractions up to 30% by intermixing a structure of electron beam-evaporated a-Ge on poly-Si deposited on quartz. Arsenic or boron dopant is incorporated during the melt process by using, respectively, an AsF5 or BF3 gas ambient. RBS and SIMS analysis reveal that the Ge metallurgical depth, the dopant junction depth and the incorporated dopant dose scale with the laser energy density and the number of laser pulses. The sheet resistance values reached after GILD process are low enough to be suitable for the fabrication of source and drain for poly-SiGe TFTs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332218
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  • 19
    Electronic Resource
    Electronic Resource
    Effective permittivity of layered dielectric sphere composites (1998)
    Springer
    Journal of materials science 33 (1998), S. 5891-5894 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A straightforward model is presented for analysing the effective permittivities of layered dielectric sphere composites. Using the present model, the effective permittivity, ɛeff, of layered dielectric sphere composites can be deduced using classical two-phase dielectric mixture formulae in two steps: first, the effective permittivity, ɛincl, of the inclusions is calculated by taking the layered dielectric sphere inclusions as sub-composites; and second, the effective permittivity, ɛeff, of the composites is found by substituting the layered dielectric sphere inclusions with homogeneous spheres whose permittivity is equal to ɛincl. The present model is applicable to multi-layer sphere composites. Experiments on resin-based hollow bead composites show that the present model accurately predicts the effective permittivity of layered dielectric sphere composites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004487006512
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  • 20
    Electronic Resource
    Electronic Resource
    Fibroblast growth factor receptors (FGFRs) and their roles in limb development (1999)
    Springer
    Cell & tissue research 296 (1999), S. 33-43 
    Details
    ISSN: 1432-0878
    Keywords: Key words FGF-FGF receptors ; Limb initiation ; Progress zone activity ; Hand and foot anomalies
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Fibroblast growth factor (FGF) receptors constitute a family of four membrane-spanning tyrosine kinases (FGFR1–4) which serve as high-affinity receptors for 17 growth factors (FGF1–17). To study functions of FGF/ FGFR signals in development, mice that carry mutations in each receptor have been created by gene targeting. Analysis of these mutant mice revealed essential functions of FGF receptors in multiple biological processes, including mesoderm induction and patterning, cell growth and migration, organ formation and bone growth. In this review we discuss recent work with FGF receptors to illustrate mechanisms, through which the FGF/FGFR signals specify vertebrate limb initiation, outgrowth and patterning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004410051264
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