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Fabrication and doping of poly-SiGe using excimer-laser processing

  • Surfaces And Multilayers
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Abstract

Pulsed Laser-Induced Epitaxy (PLIE)/Gas Immersion Laser Doping (GILD) offers several advantages over alternative epitaxial processes, especially because the process can be made spatially selective. Here, a pulsed XeCl excimer laser is used to grow poly-Si1−xGex layers with Ge fractions up to 30% by intermixing a structure of electron beam-evaporated a-Ge on poly-Si deposited on quartz. Arsenic or boron dopant is incorporated during the melt process by using, respectively, an AsF5 or BF3 gas ambient. RBS and SIMS analysis reveal that the Ge metallurgical depth, the dopant junction depth and the incorporated dopant dose scale with the laser energy density and the number of laser pulses. The sheet resistance values reached after GILD process are low enough to be suitable for the fabrication of source and drain for poly-SiGe TFTs.

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Author notes

  1. A. Slaoui

    Present address: Laboratoire PHASE, 23, rue du Loess, B.P. 20, F-67037, Strasbourg, France

Authors and Affiliations

  1. Department of Electrical Engineering and Applied Physics, OGI, 20000 N.W. Walker Road, 97291-1000, Portland, OR, USA

    A. Slaoui, C. Deng & T. W. Sigmon

  2. Department of Electrical Engineering, Stanford University, 94305, Stanford, CA, USA

    S. Talwar & J. Kramer

Authors
  1. A. Slaoui
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  2. C. Deng
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  3. S. Talwar
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  4. J. Kramer
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  5. T. W. Sigmon
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Slaoui, A., Deng, C., Talwar, S. et al. Fabrication and doping of poly-SiGe using excimer-laser processing. Appl. Phys. A 59, 203–207 (1994). https://doi.org/10.1007/BF00332218

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  • DOI: https://doi.org/10.1007/BF00332218

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