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  • 11
    Electronic Resource
    Electronic Resource
    Measurements of NBI and ion cyclotron range of frequency power deposition profiles using charge exchange spectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1503-1505 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Power deposition profiles of a heating neutral beam and/or an ion cyclotron range of frequency (ICRF) heating have been measured on the JIPP T-IIU tokamak. The deposition is obtained from the rise time of the ion temperature, which is measured from the Doppler broadening of C vi emission produced by charge exchange reaction between a neutral beam and a carbon impurity. The power deposition of ICRF has been found to be flatter than that of neutral beam injection (NBI). The thermal diffusivities are 4–5 times larger than the neoclassical values both in NBI and NBI+ICRF cases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140177
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  • 12
    Electronic Resource
    Electronic Resource
    Charge exchange recombination spectroscopy on the JFT-2M tokamak (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1506-1508 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Charge exchange recombination spectroscopy (CXRS) was used to measure the ion temperature, the toroidal rotation velocity, and the time evolution of fully stripped carbon ions during neutral beam heating in JFT-2M. The ion temperature measured by the CXRS was in good agreement with that measured by the neutral particle analyzer. Fully stripped carbon ions were found to accumulate in the center of the plasma during the H-mode phase. These results are similar to those found for metallic impurity ions such as iron and titanium and suggest that accumulation of impurity ions during the H-mode phase is caused by the improved particle confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140178
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  • 13
    Electronic Resource
    Electronic Resource
    Development of a high-current laser ion source for induction accelerators : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1216-1218 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a high-current laser ion source that can provide low-charge-state ions for induction accelerators. A frequency-doubled Nd:YAG laser (λ=532 nm) irradiated a copper target with relatively low intensities of 108–109 W/cm2. The laser-produced plasma supplied a large number of Cu+ and Cu2+ ions over 1014 ions/cm2 at a distance of 10 cm from the target. We have successfully extracted high-current copper beams over 0.1 A/cm2 using an inductive acceleration module. The beam emittance measured by a pepper-pot method was about 40 πmm mrad. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150437
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  • 14
    Electronic Resource
    Electronic Resource
    Synchrotron radiation assisted deposition of carbon films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1644-1646 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photochemical vapor deposition of carbon films from n-butane gas has been successfully done, for the first time, at room temperature using synchrotron radiation as a light source. The deposited films are hydrogenated amorphous carbon films with sp3 bonds. The deposition rate increases with negative bias.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102225
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  • 15
    Electronic Resource
    Electronic Resource
    Low-resistance contacts on YBa2Cu3O7−δ ceramics prepared by direct wire bonding methods (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 666-668 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wire bonding, such as electric discharge spot welding and ultrasonic bonding, has been investigated for use in simple, conventional methods of preparing low-resistance ohmic contacts on superconducting Y1 Ba2 Cu3 O7−δ ceramics. Spot welding with thermal annealing improves the contact's resistivity to 2×10−7 Ω cm2 , while a sample without annealing shows non-ohmic and semiconductive characteristics. Change in the crystal structure induced by high current is analyzed. Ultrasonic bonding with annealing at 500 °C achieves 3×10−8 Ω cm2 , one of the lowest contact resistivities ever obtained in simple methods. The current-voltage characteristics show nonlinearity, which is attributed to the superconducting state of the Ag/Y1Ba2Cu3O7−δ interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101466
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  • 16
    Electronic Resource
    Electronic Resource
    Eliminating channeling tail by lower dose preimplantation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1231-1232 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We optimized Ge+ and Si+ preimplantation to eliminate the channeling tail and prevent the rapid diffusion of boron and the formation of serious defects. We examined the dependence of the microchanneling of BF+2 implantation or the lattice disorder of preimplanted silicon using secondary-ion mass spectroscopy and grazing exit Rutherford backscattering spectroscopy. The optimum doses are about 25% those for full amorphization, i.e., preamorphization. The channeling tail is eliminated by disordered layers containing about 60% silicon atoms on irregular sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102523
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  • 17
    Electronic Resource
    Electronic Resource
    Classical trajectory calculations of collision energy dependence of total and partial Penning ionization cross sections for He*(23S)+N2→He+N2++e− (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 3773-3780 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Classical trajectory calculations are performed for the Penning ionization system He*(23S)+N2→He(1 1S)+N2+(X˜ 2Σg+,A˜ 2Πu,B˜ 2Σu+)+e−. Anisotropic model potentials of He*(2 3S)+N2 are adapted to reproduce collision-energy dependence of ionic-state-resolved ionization cross sections observed by two-dimensional Penning ionization electron spectroscopy. Results of trajectory calculations are compared with those of ab initio potential surfaces obtained by Ishida. Opacity functions are demonstrated to be strongly dependent on ionic states, collision energy, and anisotropic varieties of trajectories. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.478268
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  • 18
    Electronic Resource
    Electronic Resource
    Branching ratio for the production of OD(A) and OH(A) by controlled electron impact on HOD (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 1764-1768 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The OH(A–X) and OD(A–X) emission spectra have been measured by 17 eV electron impact on the mixtures of H2O and D2O with several mixing ratios. The intensity ratio of the OH(A–X) emission to that of OD(A–X), q, in the spectra of the mixture has been estimated using the OH(A–X) and OD(A–X) spectra obtained from pure H2O and pure D2O. As a result, q is proportional to the ratio of the H-atom quantity to the D atom in the mixture, indicating that q is independent of the fraction of HOD in the mixture. The following emission intensity ratios are obtained. σHOD→OH/σHOD→OD=σH2O→OH/σD2O→OD=0.53±0.02,σD2O→OD/σHOD→OD=1.88±0.24, where σHOD→OH means the total emission cross section of OH(A–X) by electron impact on pure HOD, and the others are similar. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.474088
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  • 19
    Electronic Resource
    Electronic Resource
    Absolute emission cross sections of the Paschen-α line and production dynamics of the 4F state of the excited hydrogen atom in e-H2 collisions (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 1147-1151 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Absolute emission cross sections of the Paschen-α line from H (4S,4P,4D,4F) produced in e-H2 collisions have been determined to be 4.31–10.1×10−20 cm2 at 20–100 eV by utilizing the Balmer-α emission cross sections as the standard; these values are about half those of the Balmer-β emission. From these values, the formation cross section of the 4F state has been first determined, together with the angular momentum distributions, which are the fraction of the formation cross sections of the 4S, 4P, 4D, and 4F state. The 4F state had appreciable cross sections at electron energies below 24 eV and was assigned to be produced from the singly-excited states of H2 . In the doubly-excited state channel opening above 27–32 eV, the 4P and 4D states are preferentially produced, and the 4F state is suppressed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.474460
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  • 20
    Electronic Resource
    Electronic Resource
    H(n=4)/D(n=4) branching ratio in the electron-impact dissociation of HOD (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 4979-4984 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Balmer-β emission from the H and the D atoms has been observed by electron impact on the mixtures of H2O and D2O with several mixing ratios at selected incident electron energies over the range of 22–100 eV. Intensity ratios of the emission have been estimated from computer simulation of the emission spectra on each combination of the mixing ratios and the electron energies. Analyzing the intensity ratios, the H(n=4)/D(n=4) branching ratio in the dissociation of pure HOD has been estimated for the first time to be about 1.8 below the second threshold (∼26 eV) of the Balmer-β emission, where it is about 1.5 over 40–100 eV. It has also been found that the ratios of the cross section of the H Balmer emission from H2O to the D Balmer emission from D2O are equal to those of HOD, and the ratios of the D Balmer emission from D2O to that from HOD are constant and about two over 22–100 eV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.474861
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