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  • 1
    Electronic Resource
    Electronic Resource
    Fractal properties of polymer crystals (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 2063-2067 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Small angle x-ray scattering is performed on the crystals of polyethylene and polytetrafluoroethylene up to Porod's region. The scattering intensity I obeys a power law for the magnitude of the scattering vector q for large values of q: I∼q−α. The exponent α is smaller than 4 given by Porod's law. If it is assumed that the folded chain crystals and the extended chain crystals have the fractal surface, the fractal dimension is from 2.2 to 2.8 depending on the crystallizing condition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455997
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  • 2
    Electronic Resource
    Electronic Resource
    Translational energy distribution and asymmetry parameter of the excited hydrogen atom produced in e-C2H2 collisions: Dissociation dynamics of acetylene (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 4263-4267 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Dissociative excitation of acetylene induced in e-C2H2 collisions was investigated by measuring the Doppler profile and its angular dependence from H*(n=4) at a resolution of 0.0065 nm. The translational energy distribution and the angular difference Doppler profile were calculated. The Balmer line was unpolarized. There are three major dissociation processes for H*(n=4) from C2H2; their threshold energies and translational energy distributions are (1) 20.8, 0–2 eV, (2) ∼30, 3–5 eV, and (3) 35–40, 6–8 eV, respectively. Component 1 showed a clear anisotropy: the asymmetry parameter b is 0.5±0.1 and the anisotropy of atomic emission Jp is 0. Thus, component 1 should be produced by predissociation through Rydberg states converging to the (2σu)−1 state. The decrease of b from the theoretical maximum is due to arbitrary direction of the momentum transfer vector and a relatively long lifetime of the intermediate excited states. Components 2 and 3 are also anisotropic and b〉0.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.453784
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  • 3
    Electronic Resource
    Electronic Resource
    Angular dependence of Doppler profiles of atomic emission produced in electron–molecule collisions: Estimation of anisotropy parameters (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 4920-4923 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The angular dependence of Doppler profiles of atomic fluorescence produced in electron impact dissociation of molecules was simulated in consideration of the effect of the anisotropy of dissociation and the "polarization'' in magnetic sublevel. The asymmetry parameter b and the polarization of the electric vector of emission Jp are key parameters of Doppler profiles for the excited atom of known translational energy distribution. The difference of two Doppler profiles taken at 90° and 45°, which is denoted as angular difference Doppler profile, is shown to be useful to estimate these two key parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449751
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  • 4
    Electronic Resource
    Electronic Resource
    Translational energy distributions of the excited nitrogen atom produced by electron-impact dissociative excitation of nitrogen molecules (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 1920-1923 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Doppler line shapes of atomic nitrogen emission (4p 2S1/2–3s 2P3/2: 4935.12 A(ring)) were measured precisely with a Fabry–Perot interferometer at a resolution of 0.015 A(ring). The translational energy distributions of N* were calculated and found to be similar with those of N+ and N(HR). There are three major components of N*; their peaks of the translational energy distribution and threshold energies are (1) 0.1–1.3 and 23.0 eV, (2) 2.8–3.0 and 29 eV, and (3) ∼ 5 and 38–44 eV, respectively. The first component is produced by dissociative excitation through Rydberg states converging to the C state of N2+.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.448947
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  • 5
    Electronic Resource
    Electronic Resource
    Measurements of NBI and ion cyclotron range of frequency power deposition profiles using charge exchange spectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1503-1505 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Power deposition profiles of a heating neutral beam and/or an ion cyclotron range of frequency (ICRF) heating have been measured on the JIPP T-IIU tokamak. The deposition is obtained from the rise time of the ion temperature, which is measured from the Doppler broadening of C vi emission produced by charge exchange reaction between a neutral beam and a carbon impurity. The power deposition of ICRF has been found to be flatter than that of neutral beam injection (NBI). The thermal diffusivities are 4–5 times larger than the neoclassical values both in NBI and NBI+ICRF cases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140177
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  • 6
    Electronic Resource
    Electronic Resource
    Charge exchange recombination spectroscopy on the JFT-2M tokamak (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1506-1508 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Charge exchange recombination spectroscopy (CXRS) was used to measure the ion temperature, the toroidal rotation velocity, and the time evolution of fully stripped carbon ions during neutral beam heating in JFT-2M. The ion temperature measured by the CXRS was in good agreement with that measured by the neutral particle analyzer. Fully stripped carbon ions were found to accumulate in the center of the plasma during the H-mode phase. These results are similar to those found for metallic impurity ions such as iron and titanium and suggest that accumulation of impurity ions during the H-mode phase is caused by the improved particle confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140178
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  • 7
    Electronic Resource
    Electronic Resource
    Synchrotron radiation assisted deposition of carbon films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1644-1646 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photochemical vapor deposition of carbon films from n-butane gas has been successfully done, for the first time, at room temperature using synchrotron radiation as a light source. The deposited films are hydrogenated amorphous carbon films with sp3 bonds. The deposition rate increases with negative bias.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102225
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  • 8
    Electronic Resource
    Electronic Resource
    Low-resistance contacts on YBa2Cu3O7−δ ceramics prepared by direct wire bonding methods (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 666-668 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wire bonding, such as electric discharge spot welding and ultrasonic bonding, has been investigated for use in simple, conventional methods of preparing low-resistance ohmic contacts on superconducting Y1 Ba2 Cu3 O7−δ ceramics. Spot welding with thermal annealing improves the contact's resistivity to 2×10−7 Ω cm2 , while a sample without annealing shows non-ohmic and semiconductive characteristics. Change in the crystal structure induced by high current is analyzed. Ultrasonic bonding with annealing at 500 °C achieves 3×10−8 Ω cm2 , one of the lowest contact resistivities ever obtained in simple methods. The current-voltage characteristics show nonlinearity, which is attributed to the superconducting state of the Ag/Y1Ba2Cu3O7−δ interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101466
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  • 9
    Electronic Resource
    Electronic Resource
    Indirect trench sidewall doping by implantation of reflected ions (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1534-1536 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation (i/i) technology is employed for silicon trench sidewall doping. The aspect ratio of trenches for high Mbit DRAM is very large (depth/width≥10), so that very small glancing-angle i/i to sidewalls is necessary. In this case, reflected ions are large in number and are implanted to the opposite sidewall. It is very important to know the elemental depth profile in the opposite sidewall to understand the implantation mechanism. For the first time, we measured the depth profiles at several positions of the opposite trench sidewall by secondary-ion mass spectroscopy for arsenic and boron ion implantations. It is found that reflected ions are distributed near the facing region of the directly implanted region with smaller energies than the primary energy. These findings are compared with the simulations based on the marlowe program.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101342
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  • 10
    Electronic Resource
    Electronic Resource
    Far-infrared absorption by oxygen in silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2391-2393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Far-infrared absorption measurements in the 14–50 cm−1 range have been performed for oxygen containing silicon crystals in a temperature range of 4.2–35 K. In addition to the previously reported absorption peaks at 29.3, 37.8, 43.3, and 49.0 cm−1 [D. R. Bosomworth, W. Hayes, A. R. L. Spray, and G. D. Watkins, Proc. R. Soc. London A 317, 133 (1970)], a fine structure with peaks at 25.3, 28.3, 30.2, and 33.3 cm−1 has been found, which is considered to be a sideband caused by a coupling between the off-center excitation of the interstitial oxygen and other anharmonic localized excitation of an energy of about 1 cm−1 hc.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100240
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