ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A method for quantitative analysis of piezomodulation spectra of a thin film on a substrate, including the internal reflection in the system, is presented. This method is applied to Langmuir–Blodgett (LB) films of copper phthalocyanine (CuPc) derivatives on glass substrates. A uniaxial stress was applied along the symmetry axis of the film. The spectra were measured in the region from 1.5 to 2.4 eV in three configurations; transmission, reflection from the film side, and reflection from the substrate side. The optimum Lorentzian parameters and their changes due to the stress are determined by the least-mean-square fit. The microstructures and electronic states of the LB film are discussed from the stress effects. The very small feature, which is hardly identified in the absorption spectra because of the large Frenkel exciton band, is attributed to a charge transfer (CT) excitation.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 4485-4495 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Resonant two photon ionization (R2PI) spectroscopy was used to obtain detailed spectroscopic information on the neutral and cation ground states of the jet-cooled molecules V2, VNb, and Nb2. By recording photoionization efficiency (PIE) spectra, their adiabatic ionization potentials were determined to be 51 269(5) cm−1 (V2), 51 554(10) cm−1 (VNb), and 51 359(10) cm−1 (Nb2). In VNb, we used different ionization routes to determine that the splitting between the Ω=0 and Ω=1 spin–orbit components of the X 3Σ− ground state was 230(3) cm−1. In the case of V2 and VNb, two thresholds were observed in the PIE spectra recorded via Ω=1 intermediate states. We were thus able to assign the ground states of V+2 and VNb+ as having 4Σ− symmetry, with second-order spin–orbit splittings of 20(3) and 82(3) cm−1, respectively. A simple model was applied to calculate the locations of the 1Σ+ and 2Σ+ states which are responsible for the second-order spin–orbit splitting of the neutral and cation ground states, respectively. One-color R2PI spectroscopy was employed to determine the bond dissociation energy of VNb, the result D00=30 562(10) cm−1 being obtained. The implications of our measurements regarding the relative bond strengths of the neutral and cationic dimers are discussed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 3696-3703 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Electron-impact dissociation of HCl for the formation of excited hydrogen atoms (n=4) has been investigated by measuring Doppler profiles of the Balmer lines and their angular dependence at a high optical resolution using a Fabry–Perot interferometer. The translational energy distribution (TED) and the angular difference Doppler profile were obtained. There are five major dissociation processes for the formation of H* (n=4). The threshold energy and the TED peak of the five components are (1) 19 and 2.5; (2) 25 and 7.2; (3) 29 and 1.7; (4) 36 and 5.1; and (5) (approximately-greater-than)40 and 8–12 eV, respectively. Formation of components 1 and 4 is anisotropic and parallel with respect to the electron beam. Component 1 should be produced by predissociation through the Rydberg states with the Σ symmetry converging to either the 4Σ or 2Σ− state and then those converging to the A 2Σ+ state. The asymmetry parameter (β) of component 1 was determined to be about 0.62, and the intermediate excited state for the formation of component 1 has a lifetime equal to the rotational period. Component 2 would be produced through the Rydberg states converging to the 2Π state. Component 3 would be produced through high-lying doubly excited Rydberg states converging to either the (4)2Π or (4)2Σ+ state. Component 4 should be produced through doubly excited repulsive states with the Σ symmetry.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1231-1232 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We optimized Ge+ and Si+ preimplantation to eliminate the channeling tail and prevent the rapid diffusion of boron and the formation of serious defects. We examined the dependence of the microchanneling of BF+2 implantation or the lattice disorder of preimplanted silicon using secondary-ion mass spectroscopy and grazing exit Rutherford backscattering spectroscopy. The optimum doses are about 25% those for full amorphization, i.e., preamorphization. The channeling tail is eliminated by disordered layers containing about 60% silicon atoms on irregular sites.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Critical current densities Jc of silver sheathed Bi2Sr2CaCu2O8 and Bi2Sr2Ca2Cu3O10 composite tapes fabricated by a partial melt and a powder-in-tube process, respectively, were measured at 4.2, 27, and 64 K as a function of applied magnetic field and the angle between the tape face and the direction of applied magnetic field. These measurements indicate that (1) the fraction of the grain boundaries, which are strongly coupled, are greater in the Bi(2:2:1:2)/Ag tapes than in the Bi(2:2:2:3)/Ag tapes; (2) the alignment of the Bi cuprate platelets with the c-axis perpendicular to the tape face is significantly greater for the Bi(2:2:1:2) than for the Bi(2:2:2:3)/Ag tapes; and (3) the E-J curves for both kinds of the tapes are described well by an expression, E∼exp[−(J0/J)μ], where μ and J0 are constants below their transition magnetic fields H*g.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 782-784 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A YBaCuO Josephson junction with a large normal resistance (R) was fabricated and characterized. The junction exhibited an extremely sharp transition on the current-voltage curve with R=10.8 Ω and IcR=1.8 mV at 15 K. The temperature dependence of critical current (Ic) of the junction was Ic∝(1−T/Tc), while another junction with a smaller R (0.57 Ω) showed a dependence of Ic∝(1−T/Tc)2. The difference can be explained by a picture of a grain boundary junction as a parallel array of superconductor-normal-superconductor and superconductor-insulator-superconductor elements. From the results of 110 GHz mixing experiments, it was shown that the present junction could be operative for electromagnetic waves over 2 THz.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4680-4685 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultralarge-scale integration circuits now require innovative microfabrication processes in order to achieve gigabit-scale integration. One approach is to use soft x rays, because they can give excellent spatial resolution by their short wavelength and high-reaction selectivity by core-electron excitation. Synchrotron-radiation (SR) -excited etching of SiO2 and Si is studied from the viewpoints of pattern replicability and analysis of etching selectivity between two layers. Deep-submicron patterns of SiO2 are formed by cooling the specimen with liquid N2 and adsorbing SF6 reaction gas during SR irradiation. Photon-stimulated desorption ions from SF6-adsorbed SiO2 and Si surfaces are first investigated. As a result, ion species such as SiF+n and SO+n, which are etching products from the surface, are obtained only from SiO2, and this selective etching of SiO2 is also investigated by x-ray photoelectron spectroscopy. In this selective etching mechanism, constraint of Si-etching by passivation of photofragment S+ ions is most likely. The higher selectivity of this reaction can be used not only for bulk SiO2 etching, but also for Si-surface cleaning by eliminating native oxide.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1111-1117 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dye dispersed photoconductor has been developed using (oligo phenylene sulfide)-polyimide (OPS-PI) as a matrix polymer. The OPS-PI was comprised of a series of thiophenylene moieties, –C6H4S–, and imide rings, having a novel carrier transport ability. The dispersed photoconductor showed a panchromatic photosensitivity in the wide wavelength 400–900 nm region, which resulted from the carrier generation of the OPS-PI in the wavelength 400–600 nm region and from that of the dyes, metal-free phthalocyanines, in the wavelength 600–900 nm region. A model of sensitizing the OPS-PI by means of dye dispersion is presented based both on the electronic structural study of the crystalline OPS-PI and on the optical and photoconductive studies of the copolymers derived from the OPS-PI and its modified polyimide. According to our proposed model, the optimum of the dye content in the OPS-PI for enhancing photosensitivity has been determined in the range not to destroy the carrier transport paths.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5225-5231 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of solid phase interaction between Al and a-Si:H have been investigated. The experiment led to the observation of low-temperature crystallization as has been reported. The crystallization temperature was found to be 300–350 °C from diffraction studies. From the x-ray photoelectron spectroscopy study, electron transfer from Al to Si was observed in the intermixing layer in samples annealed at RT and 200 °C whereas there is no evidence of the electron transfer for 300 and 350 °C annealed samples. To explain these results, a comparison is made with the interaction in the Cr/a-Si:H system previously reported and the interdiffusion model is proposed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7845-7850 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that the exposure of a Si (100) surface to an As ionized cluster beam (ICB) is effective in the preparation of the surface prior to epitaxial growth of GaAs under conventional high vacuum conditions of 2×10−5 Pa. This process is achieved at a temperature as low as 600 °C. A clear 1×2 or 2×2 reflection high energy electron diffraction pattern observed after the procedure indicates good ordering of the sample surface. The cleaning process is attributed to chemical and physical sputtering by As ICB in the first stage and to the subsequent As termination of Si dangling bonds. It has been found that the optimum preparation conditions are an accelerating voltage of the As ionized cluster beam of 1.3 kV and a substrate temperature of 600 °C. GaAs films deposited on As ICB treated Si (100) substrates show good crystal quality with single domain structure.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...