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  • 11
    Electronic Resource
    Electronic Resource
    Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2870-2872 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective wet oxidation of AlGaAs layers can be used to form embedded optical elements, such as buried lenses and current control apertures in vertical cavity structures. Oxidation rates of buried Al0.94Ga0.06As layers were controlled by varying the thickness of GaAs barrier layers between layers of Al0.94Ga0.06As and Al0.98Ga0.02As. This phenomenon can be attributed to the superposition of a vertical oxidation component due to species diffusing through the barrier layer and a constant lateral oxidation component. The magnitude of the vertical component is controlled by the GaAs barrier thickness, which determines the concentration of additional oxidizing species in the Al0.94Ga0.06As layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119028
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  • 12
    Electronic Resource
    Electronic Resource
    Homoepitaxial growth of InP on (111)B substrates by gas-source molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 281-283 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP has been homoepitaxially grown on both exactly (111)B oriented and misoriented substrates by gas-source molecular beam epitaxy. The optimal growth condition for obtaining a mirrorlike surface was found to be a substrate misorientation of 0.5°–1° toward 〈110〉, a substrate temperature of 470 °C, and a V/III incorporation ratio close to unity. The unity V/III ratio was established readily by monitoring the specular beam intensity of reflection high-energy electron diffraction when the phosphorus beam was modulated, similar to migration enhanced epitaxy. The InP epilayers with specular surfaces are of high quality as characterized by x-ray diffraction, Hall measurements, and low-temperature photoluminescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108990
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  • 13
    Electronic Resource
    Electronic Resource
    In situ control of As composition in InAsP and InGaAsP grown by gas-source molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1872-1874 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Group-III- and group-V-induced intensity oscillations of reflection high-energy electron diffraction are observed for InAsP in gas-source molecular beam epitaxial growth. The As incorporation rate is found to be dominant, independent of the presence of P when the phosphine flow rate is reasonably low. This observation suggests a simple method of controlling the As composition in InAsP by just controlling the incorporation-rate ratio of As to In when this ratio is less than unity. This successful in situ composition control for InAsP, combined with the in situ composition calibration in GaAsP reported previously, provides a general guideline for controlling the compositions in InGaAsP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107139
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  • 14
    Electronic Resource
    Electronic Resource
    Determination of V/III ratios on phosphide surfaces during gas source molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 254-256 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorus-controlled growth rate of homoepitaxial (100) InP, GaP, and AlP on GaP substrates by gas source molecular beam epitaxy was investigated. Elemental group-III sources and thermally cracked phosphine were used. The growth rate was monitored by the specular beam intensity oscillations of reflection high-energy electron diffraction. This technique gives exact values of V/III ratio on the surface by measuring the amount of phosphorus which is actually incorporated into the film. Here the V/III ratio is defined as P-controlled growth rate divided by group-III-controlled growth rate instead of the beam flux V/III ratio. Also the phosphorus surface desorption activation energies were measured to be 0.61 eV and in the range between 0.89 and 0.97 eV for InP and GaP, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104706
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  • 15
    Electronic Resource
    Electronic Resource
    Gas-source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple quantum well structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2954-2956 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsxP1−x/InP strained multiple quantum wells with strain as high as 2.5% were grown by gas-source molecular beam epitaxy. Successful control of the arsenic composition over a wide range was achieved by two different growth techniques. Structural and optical studies, such as high-resolution x-ray rocking curve, cross-sectional transmission electron microscopy, photoluminescence, and absorption measurement, indicate that we have obtained high quality multiple quantum wells that are suitable for optoelectronic applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104733
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  • 16
    Electronic Resource
    Electronic Resource
    Selective oxidation of buried AlGaAs versus AlAs layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1385-1387 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report significant differences between the properties of buried oxides converted from AlGaAs and AlAs layers using selective wet oxidation. Layers of AlxGa1−xAs with x≥0.96 exhibit crystallographic dependent oxidation rates, while for layers with x≤0.92 the oxidation rate is isotropic. Mesas containing partially oxidized layers of AlAs are unstable to rapid thermal cycling and exhibit excessive strain at the oxide terminus, while mesas containing partially oxidized layers of AlGaAs are robust and lack evidence of strain. Finally, the oxidation of AlGaAs layers, rather than AlAs, is found to provide robust oxide apertures for reliable vertical-cavity surface emitting lasers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117589
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  • 17
    Electronic Resource
    Electronic Resource
    Double-disk structure for output coupling in microdisk lasers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3167-3169 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report our experiment on the use of a double-disk structure to couple light output from a microdisk laser which allows us to maintain a high Q value of the microdisk resonator. The small photon leakage rate from the lower lasing disk to the top waveguiding disk can be carefully controlled by choosing the distance between the two disks. Various structures can be fabricated on the top disk to couple the light out. In this letter, a simple opening in the top disk is used for output coupling. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112470
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  • 18
    Electronic Resource
    Electronic Resource
    Broadband Bragg filter in microfabricated AlGaAs waveguides (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 241-243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of broadband Bragg filters in microfabricated AlGaAs waveguides. Electron-beam lithography and chemically assisted ion-beam etching were used to fabricate first-order gratings with 250 nm period. Bragg filters with rejection bandwidth ∼15 nm and centered at ∼1.6 μm are demonstrated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116473
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  • 19
    Electronic Resource
    Electronic Resource
    InGaAs/InP and InAsP/InP quantum well structures on GaAs (100) with a linearly graded InGaP buffer layer grown by gas-source molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2001-2003 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A linearly graded InxGa1−xP (x=0.48–1) buffer layer is used for growing a high-quality InP layer on a GaAs substrate. We show that an InxGa1−xP buffer layer is superior to an InyGa1−yAs buffer layer because it is transparent to long wavelengths and allows a less stringent composition control. InGaAs/InP single quantum wells and InAsP/InP multiple quantum wells grown on the InP/InxGa1−xP/GaAs substrate show comparable quality to similar structures grown on InP (100) substrates. Photocurrent spectra for the latter exhibit quantum-confined Stark effect near 1.3 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111719
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  • 20
    Electronic Resource
    Electronic Resource
    In situ determination of phosphorus composition in GaAs1−xPx grown by gas-source molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 292-294 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report for the first time an in situ determination of phosphorus compositions in a mixed group-V compound, such as GaAs1−xPx, grown by gas-source molecular beam epitaxy. Reflection high-energy electron diffraction intensity oscillations from As-limited and (As+P)-limited growth are observed on a Ga-rich GaAs surface. The phosphorus composition is therefore deduced from the different growth rates. Viability of this technique is strongly confirmed by the good agreement with the phosphorus compositions determined ex situ by x-ray rocking curve measurements on GaAs/GaAsP strained-layer superlattice structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105601
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