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  • 11
    Electronic Resource
    Electronic Resource
    Laser ionization spectroscopy of CD3 via the 3pz 2A‘2 Rydberg state (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 60-67 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Nascent CD3 radicals produced by photodissociation of CD3I after absorption of 266 nm radiation by the A˜ state are studied using the photofragment imaging technique. Two-photon, resonance-enhanced, multiphoton ionization [(2+1) REMPI] probes CD3 via the 3pz 2A'2 Rydberg excited electronic state. CD3I photodissociation at 266 nm is found to produce ground-electronic-state CD3 radicals with substantial vibrational excitation of the ν2 umbrella mode. Rotational constants are determined for v=0, 1, and 2 of ν2 in the 3pz excited state by analysis of the spectra. A first-order perturbation and diagonalization procedure is used to generate potential energy curves for the umbrella mode in both the ground and excited electronic states and Franck–Condon factors for various transitions between the states. These results should prove useful when employing REMPI to characterize methyl radicals in many environments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456466
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  • 12
    Electronic Resource
    Electronic Resource
    Origin of the line shapes from intramolecular Penning ionization in benzene/argon clusters (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 2525-2529 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A supersonic beam of benzene (Bz) seeded in argon was ionized by VUV radiation from the Berlin electron storage ring (BESSY). Resonance structures in the photoionization efficiency curves of Bz and Bz⋅Arn (n=1,...,4) are attributed to intramolecular Penning ionization after excitation of argon within a mixed cluster. The dependence of the shapes of the resonance lines on the seed ratio and on the cluster size is reported. It is concluded that formation of large mixed clusters causes broad resonances which are blue shifted relative to the monomer absorption line, whereas the excitation of a single argon atom bound to benzene causes narrow and red shifted lines.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.452105
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  • 13
    Electronic Resource
    Electronic Resource
    The octagonal quasilattice and electron diffraction patterns of the octagonal phase (1988)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 44 (1988), S. 857-863 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: An analysis is given of the dual transformation and also the strip method which can yield the ideal octagonal quasilattice as well as its approximants. An ideal octagonal tiling consisting of 45° rhombi and squares can be derived from the projection of a 4D cubic lattice within an irrational 2D subspace onto an irrational 2D hyperplane, and its Fourier transform matches well the eightfold electron diffraction pattern of the Cr-Ni-Si octagonal quasicrystal. The approximant of an octagonal tiling corresponds to the rearrangement of two kinds of tiles in an ideal quasilattice which destroys the exact quasiperiodic sequence. It is shown that the defects introduced to change the aperiodic order into a regular approximant correspond to a linear phason strain along certain directions, and this will break the eightfold rotational symmetry. The Fourier transform agrees well with the experimental electron diffraction pattern displaying only fourfold symmetry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767388004921
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  • 14
    Electronic Resource
    Electronic Resource
    Description of hexagonal Frank–Kasper phases by a projection method (1989)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 45 (1989), S. 268-274 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The structure of hexagonal Frank-Kasper (FK) phases can be described by the projection of the seven-dimensional (7D) Cr3Si and Zr4Al3 cubes in a suitable projection subspace onto a 3D hyperplane. The close relationship between hexagonal FK phases and the dodecagonal quasicrystal with 12-fold rotational symmetry is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S010876738801222X
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  • 15
    Electronic Resource
    Electronic Resource
    Modified multislice theory for calculating the energy-filtered inelastic images in REM and HREM (1989)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 45 (1989), S. 193-199 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Inelastic plasmon diffuse scattering (PDS) is treated as an effective position-dependent potential perturbing the incident electron wavelength in a solid surface, resulting in an extra phase grating term in the slice transmission function. This potential is derived for the geometry of reflection electron microscopy (REM) and high-resolution electron microscopy (HREM). The energy-filtered inelastic images can be calculated following the routine image simulation procedures by using different slice transmission functions for the elastic and inelastic waves, by considering the 'transitions' of the elastic scattered electrons to the inelastic scattered electrons. It is predicted that the inelastic scattering could modify the electron intensity distribution at a surface. It is possible to take high-resolution energy-filtered inelastic images of crystals, the resolution of which is about the same as that taken from the elastic scattered electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767388011511
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  • 16
    Electronic Resource
    Electronic Resource
    Precision capillary viscometer (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1494-1498 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel precision capillary viscometer which has a time resolution of ±0.001 s is reported. The viscometer has been utilized to demonstrate that estimates of intrinsic viscosity (to within 3% of the infinite dilution value for polystyrene in benzene) can now be made, over a wide range of polymer molecular weights, for solutions from a single polymer concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139386
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  • 17
    Electronic Resource
    Electronic Resource
    A possible model: Photothermal excitation via an excited state in the Si:Pd level (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5266-5269 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron photoionization cross-section spectra of the Si:Pd EA level at various temperatures are obtained for the first time. It is shown that the cross-section spectra around the threshold energy shift to lower energy when the temperature rises. Instead of the variation of the energy gap or the broadening effect of lattice relaxation, photothermal excitation via an excited state at 45 meV below the bottom of the conduction band causes this energy shift. The energy from the ground state to the excited state derived from both optical and thermal data is 370 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342392
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  • 18
    Electronic Resource
    Electronic Resource
    Reduction of secondary defect formation in MeV B+ ion-implanted Si (100) (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1838-1840 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: MeV ion implantation in Si above a dose of 1014/cm2 leads to secondary defect formation in a buried layer, which is rather stable. Annealing of Si(100) implanted with 2.0 MeV B+ ions to a dose of 2.2×1014/cm2 has been investigated by means of cross-sectional transmission electron microscopy. After annealing at 900 °C for 15 min, dislocation loops elongated along [110] were found. A remarkable decrease in secondary defect formation has been observed if, in addition, 140 keV Si+ was implanted prior to annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102181
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  • 19
    Electronic Resource
    Electronic Resource
    Gold contacts on superconducting crystals of YBa2Cu3O7 with very low contact resistivity (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1912-1914 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By cleaving crystals of YBa2Cu3O7 in high vacuum and evaporating Au in situ, we have fabricated Au-YBa2Cu3O7 junctions with very low contact resistance. Below Tc, the specified contact resistivity drops by three decades to an estimated value 2×10−9 Ω cm2 at 87.3 K. We emphasize the importance of correcting for spreading resistance in such studies. We also discuss the ideal contact resistivity, and possible contributions to the measured resistance very near Tc.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102167
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  • 20
    Electronic Resource
    Electronic Resource
    Observation of large, untwinned orthorhombic domains in YBa2Cu3O7 single crystals (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2794-2798 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The twinning pattern in single crystals of YBa2Cu3O7 has been studied by differential interference contrast microscopy and transmission electron microscopy. In 10% of crystals studied large untwinned orthorhombic [(b−a)/a=2.7%] domains exceeding 100×100 μm2 in area are observed. The structure of twin defects is described and the existence of two types of minority domains is inferred. We infer from the domain structures a mechanism for the growth of twinning patterns in single crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342770
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