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  • American Institute of Physics (AIP)  (16)
  • 2000-2004  (5)
  • 1995-1999  (7)
  • 1990-1994  (4)
  • 11
    Electronic Resource
    Electronic Resource
    SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3565-3567 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe bulk crystal fabricated by a multicomponent zone-melting method was used as a substrate for epitaxial growth of GaAs. Compared with conventional GaAs/Ge heterostructure, the lattice mismatch of GaAs/Si0.022Ge0.978 was confirmed to be reduced by a decrease of the peak separation of (400) x-ray diffraction from the epitaxial GaAs layer and the substrate. Furthermore, the linewidth of the rocking curve of GaAs on SiGe was found to be narrower than that of GaAs on Ge. These results show that SiGe is promising material as an alternative substrate to Ge for realization of exactly lattice-matched GaAs/SiGe solar cells. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1329639
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  • 12
    Electronic Resource
    Electronic Resource
    In situ analysis of the room-temperature epitaxial growth of CeO2 ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1838-1840 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The room-temperature epitaxial growth of CeO2 films on Si(111) substrates was examined in situ by combined use of a coaxial impact-collision ion scattering spectroscopy (CAICISS) and the laser molecular beam epitaxy (laser MBE). It was found that the crystal quality of CeO2 ultrathin films (∼3 nm thick) as-grown in UHV (∼10−9 Torr) could be improved remarkably by a few minutes of O2 gas exposure (∼10−5 Torr) at room temperature. A three-fold symmetry in the Ce signal intensity of azimuth rotational CAICISS spectra, which exhibited the type-B epitaxial growth ([1¯10]CeO2||[11¯0]Si), was observed for the films thicker than about 1 nm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356451
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  • 13
    Electronic Resource
    Electronic Resource
    Mixing at terahertz frequency band using YBa2Cu3O7−δ bicrystal Josephson junctions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 707-709 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high-Tc Josephson junctions made of YBa2Cu3O7−δ deposited across MgO bicrystal boundary, at terahertz (THz) frequency band, we demonstrated both fundamental and harmonic mixing. Radiation from a far-infrared laser was coupled to the junction, which was integrated with a planar bow-tie antenna, via an extended hyperhemispherical silicon lens. Fundamental mixing manifested itself in the junction's dc current–voltage (I–V) curve as a third Shapiro step in addition to those two induced by the THz laser lines from a slightly misaligned resonator. In harmonic mixing between a THz laser line and a microwave local oscillator, the highest harmonic number we could get was 490 with a signal-to-noise ratio of 9 dB at the intermediate frequency. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119836
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  • 14
    Electronic Resource
    Electronic Resource
    Intrinsic noise temperatures of YBa2Cu3O7−δ Josephson devices on bicrystal substrates and the upper frequency limit for their operation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6536-6538 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Following a method proposed by Divin and Modovets [Sov. Tech. Phys. Lett. 9, 108 (1983)], we have measured at millimeter waveband the intrinsic noise temperatures TN of YBa2Cu3O7−δ Josephson junctions or dc superconducting quantum interference devices (SQUIDs) fabricated on SrTiO3, yttria-stabilized ZrO2, or Si bicrystal substrates. Over wide ranges of physical temperatures TP and the junction's normal resistance RN, it was found that TN follows TP pretty well. This indicates that the intrinsic noise in the devices is dominated by Johnson noise. TN was also measured in cases where there is external magnetic field applied, or where there is another microwave radiation like the local oscillator in a mixer. The magnetic field or microwave radiation does not seem to affect TN in any appreciable way. To estimate the high frequency performance of the junctions on Si bicrystal substrates, direct irradiation by a far infrared laser at 1.81 THz is carried out and the clear first Shapiro step is observed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363672
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  • 15
    Electronic Resource
    Electronic Resource
    High-purity GaSb epitaxial layers grown from Sb-rich solutions (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 239-240 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped GaSb crystals with mirror-like surfaces were obtained by liquid phase epitaxy from Sb-rich solutions. The background carrier concentration strongly depended on the growth temperature. By growing crystals below 600 °C, we can obtain a GaSb crystal with a background carrier concentration under 1016 cm−3. Photoluminescence studies showed that native defects related to Sb vacancies were significantly reduced in the GaSb crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102842
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  • 16
    Electronic Resource
    Electronic Resource
    Correlation between electron mobility and silicon-hydrogen bonding configurations in plasma-hydrogenated polycrystalline silicon thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2436-2438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes the relationship between electron mobility and Si-hydrogen bonding configurations in poly-Si thin films after plasma-hydrogenation treatment. A 50-nm-thick amorphous-Si film was crystallized by excimer laser irradiation followed by plasma hydrogenation. Measurements of the Hall effect and Raman scattering demonstrated that mobility increased under the Si-H dominant state and decreased under the Si-H2 dominant state, which were respectively caused by adjusted and excessive hydrogenation times. Mobility degradation was recovered by dissociation of excess H atoms by annealing. The origin of the correlation is discussed in terms of imperfections such as grain boundaries and in-grain defects.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121376
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