ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The room-temperature epitaxial growth of CeO2 films on Si(111) substrates was examined in situ by combined use of a coaxial impact-collision ion scattering spectroscopy (CAICISS) and the laser molecular beam epitaxy (laser MBE). It was found that the crystal quality of CeO2 ultrathin films (∼3 nm thick) as-grown in UHV (∼10−9 Torr) could be improved remarkably by a few minutes of O2 gas exposure (∼10−5 Torr) at room temperature. A three-fold symmetry in the Ce signal intensity of azimuth rotational CAICISS spectra, which exhibited the type-B epitaxial growth ([1¯10]CeO2||[11¯0]Si), was observed for the films thicker than about 1 nm. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1356451