Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 2436-2438
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This letter describes the relationship between electron mobility and Si-hydrogen bonding configurations in poly-Si thin films after plasma-hydrogenation treatment. A 50-nm-thick amorphous-Si film was crystallized by excimer laser irradiation followed by plasma hydrogenation. Measurements of the Hall effect and Raman scattering demonstrated that mobility increased under the Si-H dominant state and decreased under the Si-H2 dominant state, which were respectively caused by adjusted and excessive hydrogenation times. Mobility degradation was recovered by dissociation of excess H atoms by annealing. The origin of the correlation is discussed in terms of imperfections such as grain boundaries and in-grain defects.© 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121376
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