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  • Articles  (58)
  • 1990-1994  (33)
  • 1965-1969  (15)
  • 1935-1939  (10)
  • Electrical Engineering, Measurement and Control Technology  (58)
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  • Articles  (58)
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  • 1
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Focusing optics have been installed on the 5.0 T Wiggler beam line of the SRS at Daresbury Laboratory for use with x-ray diffraction measurements of surfaces and interfaces. A significant increase in the flux has been achieved without excessive degradation of the resolution in the vertical plane. The full width at half-maximum of the focused image compares well with the predictions of ray tracing analysis.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1655-1656 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Series operation of power metal-oxide semiconductor field-effect transistors (MOSFETs) to increase their effective hold off voltage is described. The design procedure presented is a modification of a recently reported [Baker and Johnson, Rev. Sci. Instrum. 63, 5799 (1992)] method. Comments are made on implementing MOSFET stacks in various types of instrumentation.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2211-2213 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: It is shown that using the secondary breakdown effect of a bipolar transistor, often called an avalanche transistor, the large input capacitance of a power MOSFET may be charged very quickly. A power MOSFET driven by an avalanche transistor is used to generate electrical pulses of 〉800 V into 50 Ω with rise times of approximately 3 ns. The output pulse amplitude can be varied by adjusting the drain-source voltage of the power MOSFET. The trigger delay of this circuit is approximately 5 ns, with jitter of 〈100 ps. This circuit has been used to generate pulses at a repetition rate of greater than 1 kHz.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 412-416 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A cell for examining the density profile of sheared fluids at the solid-liquid interface by neutron reflectometry is presented. This cell has also proven valuable in examining near-surface bulk structures in the plane perpendicular to the shear flow using small angle neutron scattering. The shear rates can be controlled by changing the volume flow through the cell over three orders of magnitude. All components of the cell are designed to be chemically inert. A temperature-controlled environment compatible with neutron studies is also briefly described. Preliminary neutron reflectivity and small angle neutron scattering results using this cell are presented, and potential applications are discussed.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3286-3288 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Operation of the trapped plasma avalanche transit time (TRAPATT) diode in the time domain is presented. When operated in the time domain, pulses with amplitudes greater than 1,000 V and risetimes well under 300 ps can be achieved. Selection of a diode for use as a TRAPATT diode is discussed. Experimental results demonstrate pulse generation with an amplitude of 2000 V into 50 Ω and a risetime of 200 ps using a single diode and a power MOSFET driving circuit.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3390-3398 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A versatile system has been designed and fabricated to prepare atom-probe field-ion-microscope (APFIM) specimens in a systematic manner, such that internal interfaces can be positioned in the tips of these wire specimens for subsequent analysis of their chemical composition. This system incorporates both beaker electrolytic and zone electrolytic cell configurations, a specially constructed power supply, and a special transmission electron microscope holder for wires. The power supply enables ac electroetching or dc electropolishing in the automated or manual modes. The ac wave forms available are sine (0.002 Hz–200 kHz) or square (10 Hz–20 kHz). Triggering and gating are performed manually or with a pulse generator. The dc output is gated manually to produce a continuous output or with a pulse generator to produce single pulses with widths in the range 50 μs–1 s. A counter indicates the number of periods of voltage applied, and the total charge transferred in the electrolytic cell is integrated in the range 10 μA s–1 kA s. The power supply provides 0 to ±48 V peak at 1 A peak. A double-tilt stage for an Hitachi H-700H 200 kV transmission electron microscope (TEM) was radically modified to hold APFIM specimens; this stage is vibrationless at 310 000× magnification. It has a tilting range of ±30° and ±27° for the x and y tilts, respectively. Examples are given of the controlled backpolishing of W-3 at. % Re, W-25 at. % Re, Mo-5.4 at. % Re, and Fe-3 at. % Si specimens, and their observation by TEM, to selectively place grain boundaries in the tip region. The analysis of the chemical composition of a grain boundary, which is first located in a W-25 at. % Re specimen via TEM, by the APFIM technique is presented.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1863-1868 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The capabilities of the transmission electron microscope have been extended to enable in situ studies of the interaction of atomic oxygen with various solids to be performed. This has been accomplished by modifying the specimen chamber region of a JEOL 200CX TEM/STEM electron microscope to accommodate a specially designed environmental cell and specimen heating stage. With this arrangement it is possible to continuously observe changes in the appearance of a specimen as it undergoes reaction with a beam of atomic oxygen. In this paper a description of the technique will be presented together with some applications which highlight its advantages over conventional transmission electron microscopic post-reaction examinations.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1031-1036 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The characteristics of a bipolar junction transistor operating in the avalanche region and then triggered into current mode second breakdown are formulated. If the time the BJT is subjected to secondary breakdown is limited the BJT may be used as a nanosecond, high voltage switch without sustaining damage. Several methods of fast pulse generation, electrical and optical, using this mode of operation are discussed. A 2000 V pulse generator, into 50 Ω, with a risetime of approximately 1 ns, jitter 〈100 ps, is then designed using these results.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5799-5801 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A reliable circuit configuration is described for stacking power metal–oxide semiconductor field effect transistors (MOSFETs). The resulting circuit has a hold off voltage N times larger than a single power MOSFET, where N is the number of power MOSFETs used. The capability to switch higher voltages and thus greater amounts of power, into a 50 Ω load, in approximately the same time as a single device is realized. Design considerations are presented for selecting a power MOSFET. Using the design method presented, a 1.4 kV pulse generator, into 50 Ω, with a 2 ns rise time and negligible jitter is designed.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Optical and quantum electronics 24 (1992), S. 517-538 
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Erbium-doped fibre amplifiers and lasers have been the subject of intense research and development over the last five years. It is hoped that this review will serve as an introduction to the main device concepts and make accessible the rapidly expanding body of literature.
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