ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    facet.materialart.
    Unknown
    High efficiency GaAs solar cells (1977)
    In:  CASI
    Details
    Publication Date: 2006-05-24
    Description: The present status of the GaAlAs/GaAs heteroface solar cell program is reported. Studies have been concentrated on GaAlAs/GaAs heteroface solar cells; however, some research has been conducted on thin junction, diffused GaAs solar cells. Emphasis has been on obtaining high efficiency (18% to 20%) GaAs solar cells. Two problems that have limited the efficiency of GaAs solar cells are the high recombination velocity of carriers near the surface and the low minority carrier diffusion length in n-GaAs.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Solar Cell High Efficiency and Radiation Damage; p 133-138
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 2
    facet.materialart.
    Unknown
    Solar pumped laser technology options for space power transmission (1986)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: An overview of long-range options for in-space laser power transmission is presented. The focus is on the new technology and research status of solar-pumped lasers and their solar concentration needs. The laser options include gas photodissociation lasers, optically-pumped solid-state lasers, and blackbody-pumped transfer lasers. The paper concludes with a summary of current research thrusts.
    Keywords: LASERS AND MASERS
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 3
    facet.materialart.
    Unknown
    Report from the Cavity-Laser Working Group (1985)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: From the Workshop, a Cavity-Laser Working Group was formed. The goal of this Cavity-Laser Working Group was to propose molecules which might be useful as lasants for blackbody cavity lasers. The approach was to (1) define some rules for the identification of molecules, (2) consider molecules presented at the Workshop and (3) identify additional molecules through the suggestions of attendees. Some evaluation was to be attempted for each molecule considered. A set of criteria was developed, however, sophisticated rules required detailed information which was not available for every molecule. The rules are listed and briefly discussed.
    Keywords: LASERS AND MASERS
    Type: Lasant Materials for Blackbody-Pumped Lasers; p 157-168
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 4
    facet.materialart.
    Unknown
    Light-induced modulation of broad-band optical absorption in CdS (1970)
    In:  Other Sources
    Details
    Publication Date: 2011-08-16
    Description: Optical absorption due to imperfections in CdS by sensitive differential technique using laser excitation
    Keywords: MASERS
    Type: ; ADEMIE DES SCIENCES
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 5
    facet.materialart.
    Unknown
    Optical absorption components of light-modulated absorption spectrum of CdS (1975)
    In:  Other Sources
    Details
    Publication Date: 2011-08-16
    Description: The amplitude and decay coefficient of light-induced modulation of absorption (LIMA) was measured as a function of wavelength from 535 to 850 nm for single-crystal CdS. The decay coefficient exhibited a discontinuous resonance at 710 nm which was due to the overlap and cancellation of two opposing absorption changes. A method was developed to separate these opposing absorption changes using the measured decay coefficients. The discrete-level-to-band energy for one absorption change was found to be 1.64 eV. An improved model was developed which contains two associated levels in the band gap separated by 0.32 eV.
    Keywords: OPTICS
    Type: Journal of Applied Physics; 46; Feb. 197
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 6
    facet.materialart.
    Unknown
    Electrical contacts to ion cleaned n-type gallium arsenide. (1972)
    In:  Other Sources
    Details
    Publication Date: 2011-08-16
    Description: The electrical current through silver contacts evaporated onto n-type gallium arsenide is reported as a function of surface treatment. Contacts to untreated gallium arsenide exhibit the expected high resistance. Surface cleaning by argon ion bombardment reduces the resistance by three orders of magnitude. The electrical resistance beyond 850 eV increases rapidly with ion bombardment energy. The resistance minimum at 850 eV is explained semiquantitatively in terms of a balance between cleaning and surface damage.
    Keywords: ELECTRONIC EQUIPMENT
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 7
    facet.materialart.
    Unknown
    Rise kinetics of light-induced modulation of absorption for a CdS crystal (1976)
    In:  Other Sources
    Details
    Publication Date: 2011-08-17
    Description: An experimental study has been made of the rise kinetics for changes in optical absorption in a single crystal of CdS which was bulk excited by pulsed laser light. The experimental data were compared to calculations from a simple model involving a bimolecular process. Experimental and calculated values agreed to within the experimental error and confirmed that light-induced modulation of absorption is a bimolecular process.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics; 47; Nov. 197
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 8
    facet.materialart.
    Unknown
    Preliminary comparison of laser and solar space power systems (1983)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: Four laser receiver systems are compared to onboard solar photovoltaic power generation for spacecraft electrical requirements. The laser photovoltaic and laser MHD receivers were found to be lighter than a comparable planar solar photovoltaic system. The laser receiver also shows less drag at lower altitudes. Panel area is also reduced for the laser receiver allowing fewer Shuttle trips for construction. Finally, it is shown that a 1 megawatt laser and receiver system might be constructed with less weight than a comparable planar solar photovoltaic system.
    Keywords: SPACECRAFT PROPULSION AND POWER
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 9
    facet.materialart.
    Unknown
    Recovery of shallow junction GaAs solar cells damaged by electron irradiation (1978)
    In:  Other Sources
    Details
    Publication Date: 2011-08-17
    Description: Solar cells operated in space are subject to degradation from electron and proton radiation damage. It has been found that for deep junction p-GaAlAs/p-GaAs solar cells some of the electron radiation damage is removed by annealing the cells at 200 C. The reported investigation shows that shallow junction p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells irradiated with 1 MeV electrons show a more complete recovery of short-circuit current than do the deep junction cells. The heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells studied were fabricated using the etch-back epitaxy process.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Electrochemical Society; vol. 125
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 10
    facet.materialart.
    Unknown
    Annealing of GaAs solar cells damaged by electron irradiation (1978)
    In:  Other Sources
    Details
    Publication Date: 2011-08-17
    Description: Measurements of thermal annealing of GaAlAs/GaAs solar cells damaged by 1 MeV electron irradiation are reported, and the magnitude of the short-circuit current recovery is discussed. The damaged cells are annealed in a vacuum at 200 C. A cell irradiated at 10 to the 13th power electrons per sq cm recovers all its lost short-circuit current after 15 hours of annealing. Possible application of the annealing process to solar cells in space is also considered.
    Keywords: SOLID-STATE PHYSICS
    Type: Electrochemical Society; vol. 125
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...