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  • Other Sources  (4)
  • 1980-1984  (4)
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  • 1
    facet.materialart.
    Unknown
    The helium 10830 A line in early-type stars - An atlas of Fabry-Perot scans (1982)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Representative profiles of He I 10830 A in 65 early-type (O6-A1) stars over a wide range of luminosity are presented. The atlas scans were obtained using the Vaughan Fabry-Perot interferometer on the C. E. K. Mees 0.6 m and KPNO 0.9 m telescopes and usually cover a range of plus or minus 15 A at 1 A resolution with sampling distances between 0.5 A and 2 A depending on the photometer integration time required to reach reasonable Poisson counting statistics. The majority of the scans show very shallow, broad features which do not agree with plane-parallel NLTE model atmosphere calculations of the 10830 line by Auer and Mihalas (1972). Difficulties connected with previous theoretical studies of this line are briefly discussed, and suggestions for possible future modifications to the theory are made.
    Keywords: ASTROPHYSICS
    Type: Astrophysical Journal; vol. 263
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
    facet.materialart.
    Unknown
    Laser diode with thermal conducting, current confining film (1980)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: A laser diode formed of a rectangular parallelopiped body of single crystalline semiconductor material includes regions of opposite conductivity type indium phosphide extending to opposite surfaces of the body. Within the body is a PN junction at which light can be generated. A stripe of a conductive material is on the surface of the body to which the P type region extends and forms an ohmic contact with the P type region. The stripe is spaced from the side surfaces of the body and extends to the end surfaces of the body. A film of germanium is on the portions of the surface of the P type region which is not covered by the conductive stripe. The germanium film serves to conduct heat from the body and forms a blocking junction with the P type region so as to confine the current through the body, across the light generating PN junction, away from the side surfaces of the body.
    Keywords: Lasers and Masers
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 3
    facet.materialart.
    Unknown
    Method of epitaxially depositing cadmium sulfide (1980)
    In:  CASI
    Details
    Publication Date: 2019-07-12
    Description: A single crystal layer of either cadmium sulfide or an alloy of cadmium sulfide and indium phosphide is epitaxially deposited on a substrate of cadmium sulfide by liquid phase epitaxy using indium as the solvent.
    Keywords: Solid-State Physics
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 4
    facet.materialart.
    Unknown
    Ohmic contact for P type indium phosphide (1980)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: A body including P type indium phosphide has an ohmic contact thereon of an alloy of by weight 81% to 86% gold (Au), 11% to 14% germanium (Ge) and 2% to 5% zinc (Zn). This contact has a low resistance and good adhesion to the indium phosphide body.
    Keywords: Solid-State Physics
    Format: application/pdf
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    NASA TECHNICAL REPORTS
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