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Ohmic contact for P type indium phosphideA body including P type indium phosphide has an ohmic contact thereon of an alloy of by weight 81% to 86% gold (Au), 11% to 14% germanium (Ge) and 2% to 5% zinc (Zn). This contact has a low resistance and good adhesion to the indium phosphide body.
Document ID
20080006907
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Hawrylo, Frank Z.
Date Acquired
August 24, 2013
Publication Date
March 25, 1980
Subject Category
Solid-State Physics
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,195,308
Patent Application
US-PATENT-APPL-SN-903117

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