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Method of epitaxially depositing cadmium sulfideA single crystal layer of either cadmium sulfide or an alloy of cadmium sulfide and indium phosphide is epitaxially deposited on a substrate of cadmium sulfide by liquid phase epitaxy using indium as the solvent.
Document ID
20080006906
Acquisition Source
Langley Research Center
Document Type
Other - Patent
Authors
Hawrylo, Frank Z.
Date Acquired
August 24, 2013
Publication Date
May 20, 1980
Subject Category
Solid-State Physics
Funding Number(s)
CONTRACT_GRANT: NAS1-14349
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,203,785
Patent Application
US-PATENT-APPL-SN-965239

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