Publication Date:
2018-03-20
Description:
Author(s): C. Zucchetti, F. Bottegoni, G. Isella, M. Finazzi, F. Rortais, C. Vergnaud, J. Widiez, M. Jamet, and F. Ciccacci We investigate the spin-to-charge conversion in highly doped germanium as a function of the kinetic energy of the carriers. Spin-polarized electrons are optically generated in the Ge conduction band, and their kinetic energy is varied by changing the photon energy in the 0.7–2.2 eV range. The spin d... [Phys. Rev. B 97, 125203] Published Mon Mar 19, 2018
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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