Publication Date:
2013-09-18
Description:
Author(s): F. Bottegoni, A. Ferrari, G. Isella, M. Finazzi, and F. Ciccacci We performed photoinduced inverse spin-Hall effect (ISHE) measurements on Si-doped bulk GaAs at room temperature. The spin current is optically injected in the sample by means of circularly polarized light and is detected through spin-dependent scattering by Si impurities, which provide an electromo... [Phys. Rev. B 88, 121201] Published Tue Sep 17, 2013
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics