Publication Date:
2012-06-20
Description:
Author(s): F. Bottegoni, A. Ferrari, G. Isella, M. Finazzi, and F. Ciccacci We give a theoretical explanation of the very high electron-spin polarization measured in compressively strained Ge layers through spin-polarized photoemission experiments, based on the enhancement of the band orbital mixing between light-hole (LH) and split-off (SO) bands along the growth direction... [Phys. Rev. B 85, 245312] Published Tue Jun 19, 2012
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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