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  • 79.20 Kz  (1)
  • Key words Selective serotonin re-uptake inhibitors  (1)
  • 1
    ISSN: 1432-1041
    Keywords: Key words Selective serotonin re-uptake inhibitors ; Adverse drug reactions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Abstract Objective: The present study was performed both to investigate whether there might be a difference between the selective serotonin re-uptake inhibitors, (SSRIs) with regard to the incidence of withdrawal reactions, and to describe the associated symptoms. From the WHO database, therefore, all case reports from the year of introduction for each of the SSRIs, fluoxetine, paroxetine and sertraline, were retrieved. Sales figures were obtained from Intercontinental Medical Statistics International. The reporting rates were calculated as the number of reports per million defined daily doses (DDDs) sold per year. Results: The reporting rate of withdrawal reactions for paroxetine was found to be higher than that for sertraline and fluoxetine in each of the countries selected for detailed analyses (US, UK and Australia), as well as for all 16 countries combined. Moreover, using the WHO system of organ classification, the ratio of central nervous system to psychiatric withdrawal symptoms was 1.9 and 2.1 for paroxetine and sertraline, respectively, whereas that for fluoxetine was 0.48, indicating a possible qualitative difference between the SSRIs with respect to the nature of the withdrawal syndrome.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 46 (1988), S. 305-312 
    ISSN: 1432-0630
    Keywords: 61.80 Fe ; 66.30 Lw ; 79.20 Kz
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Sputtering of the solid rare gas Ar by 0.8–3.0 keV electrons was studied experimentally and theoretically. The argon films were deposited on a quartz-crystal microbalance kept at liquid-helium temperature. The yield was determined from the mass loss during irradiation. The absolute yield shows a significant dependence on film thickness in accordance with earlier measurements on electronic sputtering of solid argon. The yield shows a maximum of about 3.0±0.4 Ar/elec. at 1.5 keV. The thickness dependence reflects the mobility of electronic excitations created by the primary electrons. The data analysis is based on a theoretical treatment for the diffusive motion of these excitations. From the thickness as well as the energy dependence of the yield we may derive a characteristic diffusion length for the excitations of 200–300 Å.
    Type of Medium: Electronic Resource
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