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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    European journal of clinical pharmacology 45 (1993), S. 199-203 
    ISSN: 1432-1041
    Keywords: Drug education ; Hospital admission ; adverse drug reactions ; drug utilisation ; intervention
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary As part of a high-intensity monitoring study of drug events as the cause of admission to departments of internal medicine, the effect of an educational intervention programme was studied. Two departments were included, one specialising in geriatrics and one that received patients by non-selected referral. The series consisted of 607 consecutive admissions studied before and 703 after the intervention. The drug events considered were adverse drug reactions and dose-related therapeutic failures, mainly due to non-compliance. A modest, statistically non-significant decrease in drug related hospital admissions (DRH) was seen, from 14% before to 13% after the intervention period. However, DRHs classified as definitely avoidable showed the significant decrease of 83%. There was no apparent relationship between the topics selected for the intervention programme and changes in the pattern of DRHs. No relationship between alterations in sales data and hospital admissions caused by a given drug could be demonstrated. A blinded external evaluation of case abstracts did not disclose any significant shift in the investigators' assessments. The intervention may have had an non-specific effect on avoidable DRHs.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 46 (1988), S. 305-312 
    ISSN: 1432-0630
    Keywords: 61.80 Fe ; 66.30 Lw ; 79.20 Kz
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Sputtering of the solid rare gas Ar by 0.8–3.0 keV electrons was studied experimentally and theoretically. The argon films were deposited on a quartz-crystal microbalance kept at liquid-helium temperature. The yield was determined from the mass loss during irradiation. The absolute yield shows a significant dependence on film thickness in accordance with earlier measurements on electronic sputtering of solid argon. The yield shows a maximum of about 3.0±0.4 Ar/elec. at 1.5 keV. The thickness dependence reflects the mobility of electronic excitations created by the primary electrons. The data analysis is based on a theoretical treatment for the diffusive motion of these excitations. From the thickness as well as the energy dependence of the yield we may derive a characteristic diffusion length for the excitations of 200–300 Å.
    Type of Medium: Electronic Resource
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