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  • 1
    Publication Date: 2019-06-28
    Description: This report is a technology assessment relevant to the 30 GHz Monolithic Receive Module development. It is based on results obtained on the present NASA Contract (NAS3-23356) as well as on information gathered from literature and other industry sources. To date the on-going Honeywell program has concentrated on demonstrating the so-called interconnected receive module which consists of four monolithic chips - the low noise front-end amplifier (LNA), the five bit phase shifter (PS), the gain control amplifier (GC), and the RF to IF downconverter (RF/IF). Results on all four individual chips have been obtained and interconnection of the first three functions has been accomplished. Future work on this contract is aimed at a higher level of integration, i.e., integration of the first three functions (LNA + PS + GC) on a single GaAs chip. The report presents the status of this technology and projections of its future directions.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-180825 , NAS 1.26:180825
    Format: application/pdf
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  • 2
    Publication Date: 2019-06-28
    Description: The design and performance of a GaAs monolithic 180-degree one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20 deg of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480); MTT-31; 1077-108
    Format: text
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  • 3
    Publication Date: 2019-07-27
    Description: A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE, 1987 Microwave and Millimeter-Wave Monolithic Circuits Symposium; June 8 , 9, 1987; Las Vegas, NV; United States
    Format: text
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  • 4
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    In:  Other Sources
    Publication Date: 2019-07-12
    Description: A monolithic gain control amplifier for Ka-band has been developed based on 0.25 micron-gate-length dual-gate FETs fabricated on ion-implanted material. A single-stage monolithic amplifier gives a gain of 6 dB at 31 GHz including fixture losses with a gain control range of over 20 dB. The device and IC design and fabrication are described.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Electronics Letters (ISSN 0013-5194); 22; 503
    Format: text
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