Publikationsdatum:
2019-06-28
Beschreibung:
The design and performance of a GaAs monolithic 180-degree one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20 deg of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.
Schlagwort(e):
ELECTRONICS AND ELECTRICAL ENGINEERING
Materialart:
IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480); MTT-31; 1077-108
Format:
text
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