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  • 61.40  (3)
  • 61.80  (2)
  • 73  (1)
  • Doubled haploids  (1)
  • STRUCTURAL MECHANICS
  • 1990-1994  (4)
  • 1975-1979  (1)
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  • 1
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 54 (1992), S. 40-46 
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 71.55 ; 82.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Amorphous (a-) semiconductors like a-Si:H and the chalcogenide glasses possess a general tendency to establish an overall equilibrium between the electronic system and the lattice with its dopant and defect sites. In the present paper the chemical interactions which establish these equilibria within the bulk of the a-semiconductor lattices are compared to chemical interactions in liquid electrolytes, particularly to those in H2O. These considerations reveal close similarities between autocompensation doping in a-semiconductors and acid/base reactions in H2O. The effects of light and field-effect induced defect formation, on the other hand, are shown to be related to the phenomenon of electrolysis in H2O. The consideration of these analogies further emphasizes the roles of charge-carrier localization and that of H-diffusion in promoting dopant and defect equilibration reactions in a-semiconductors.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 13 (1977), S. 255-259 
    ISSN: 1432-0630
    Schlagwort(e): 73
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract After bombarding silicon single crystals with heavy neon ion doses, the resulting amorphous surface layer has been found to be electrically insulated from the underlying bulk material. Current-voltage characteristics indicate the formation of a junction between the crystalline and the damaged layer. As a consequence, the electrical properties of the amorphous layer can be measured at low temperatures up to about 230 K and considerably beyond room temperature, if thick crystal wafers and silicon-on-sapphire (SOS) samples, respectively, are used.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 52 (1991), S. 335-338 
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 61.80 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract n-type a-Si:H films have been irradiated with light, electrons, protons and heavy ion beams. It is shown that the non-thermal creation of dangling-bond defects activates significant densities of previously inactive phosphorus dopants. The relevance of these results is discussed with respect to equilibration phenomena in doped material and with respect to degradation phenomena in a-Si:H solar cells.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 4
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 53 (1991), S. 235-240 
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 61.80 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Hydrogenated amorphous silicon (a-Si:H) films have been irradiated with H+, B+, P+, and Ar+ ion beams. The accumulation and the annealing of irradiation-induced defects has been investigated through a series of electronic transport and PDS measurements. We find that for all projectiles damage accumulation is dominated by atomic displacement collisions with the damage saturating for energy transfers in excess of about 10 eV/target atom. Annealing at elevated temperatures causes the conductivity of doped and irradiated a-Si:H films to increase according to stretched exponential decay curves. All annealing parameters derivable from such fits scale with the energy originally dissipated into atomic displacement collisions. For energy transfers up to 10 eV/target atom the activation energy for annealing increases up to a saturation value and, at the same time, an increasing fraction of the irradiation-induced defects becomes stable against annealing at moderate temperatures (T a〈250° C). We discuss these results with respect to damage accumulation data in crystalline silicon (c-Si) and with regard to the annealing of metastable defects in a-Si:H.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 5
    ISSN: 1432-2242
    Schlagwort(e): Gliadin ; HMW glutenin ; SDS electrophoresis ; Biochemical marker ; 1A-1R, 1B–1R wheatrye double translocation ; Doubled haploids ; Triticum aestivum L.
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie
    Notizen: Abstract Eighteen available doubled haploid wheat lines with a cytologically proven 1A–1R, 1B–1R double translocation, which where derived via anther culture from four crosses of the 1A–1R wheat-rye translocation cv “Amigo” with several 1B–1R wheat-rye translocation forms, were subjected to electrophoretic seed protein analysis. Besides, the five parents used in the crosses and some other wheat cultivars and doubled haploid lines (19 with a 1B–1R single translocation, 10 with a 1A–1R translocation and 7 without any 1R translocation) were also included in the investigation. It was found that the gliadin patterns visualized after SDS polyacrylamide gel electrophoresis of alcohol-soluble seed protein extracts can differentiate not only 1B–1R and 1A–1R translocation forms from wheats without any 1R-translocation chromosome, but also 1B–1R and 1A–1R wheats from each other. Moreover, 1A–1R, 1B–1R double translocation lines can be distinguished as well due to characteristic differences revealed between 1A–1R and 1B–1R translocation forms. Thus, all of tested dh1- and dh2-grains of the double translocation lines showed the expected doublet: the 1A–1R translocation (“Amigo”)-typical rye band and the 1B–1R translocation (“Kawkas”)-typical rye band. Consequently, gliadin patterns estimated after SDS electrophoresis may be used as markers for the fast detection of the desired 1A–1R, 1B–1R double translocation forms among 1A–1R single translocation lines, 1B–1R single translocation lines and lines without any 1R-translocation in the progenies of appropriate crosses. Furthermore, by means of gliadin tests on the dh2-generation the excellent stability of the double translocation 1A–1R, 1B–1R during more than one propagation phase has been proven. Estimations of high-molecular weight (HMW) glutenin subunits coded by 1A and 1B chromosomes are compatible with the double translocation constitution. A few deviating results can be explained by crossing-over events. Seed protein analysis revealed that it is possible to produce 1A–1R, 1B–1R double translocation lines with good glutenin compositions provided that adequate favourable parents are used.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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