Abstract
After bombarding silicon single crystals with heavy neon ion doses, the resulting amorphous surface layer has been found to be electrically insulated from the underlying bulk material. Current-voltage characteristics indicate the formation of a junction between the crystalline and the damaged layer. As a consequence, the electrical properties of the amorphous layer can be measured at low temperatures up to about 230 K and considerably beyond room temperature, if thick crystal wafers and silicon-on-sapphire (SOS) samples, respectively, are used.
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References
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Müller, G., Kalbitzer, S. On the insulating properties of the interfacial layer between ion bombarded-amorphous and crystalline silicon. Appl. Phys. 13, 255–259 (1977). https://doi.org/10.1007/BF00882889
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DOI: https://doi.org/10.1007/BF00882889