ISSN:
0392-6737
Keywords:
III–V semiconductors
;
III–V compounds and systems
;
Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds)
;
Conference proceedings
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Summary A photoluminescence study of self-ordered InAs quantum dots grown by molecular beam epitaxy on a GaAs substrate is reported. Short pulses and high excitations have been used in order to observe emission from higher states of the quantum dots. The energy spacing between adjacent transitions seems to be of the order of 40–50 meV for dot diameters around 20 nm. The photoluminescence decay time from the ground state is of the order of 650–700 ps and decreases down to roughly 100 ps for the highest confined states. A cascade-like mechanism for the carrier relaxation in these structures is strongly suggested by the time-resolved data.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02457212
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