ISSN:
0392-6737
Keywords:
III–V semiconductors
;
Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds)
;
Excitons and related phenomena (including electron-hole drops)
;
III–V compounds and systems
;
Conference proceedings
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Summary We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of continuous-wave photoluminescence and photoluminescence excitation. The luminescence spectrum at low temperature systematically exhibits a doublet structure whose lineshape is very sensitive to the excitation energy. Accordingly, the excitation spectra detected by monitoring the emission at the two different luminescence peaks have very different profiles, with peaks and/or dips which are not directly related to absorption resonances. As a matter of fact, the anomalies disappear when increasing the temperature or when using an optical bias with energy above the GaAs energy gap. In these cases, the excitation profiles recover the behaviour typical of 2D systems.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02457214
Permalink
