ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Publication Date: 2018-02-17
    Description: We introduce the Clouds Above the United States and Errors at the Surface (CAUSES) project with its aim of better understanding the physical processes leading to warm screen-temperature biases over the American Midwest in many numerical models. In this first of four companion papers, 11 different models, from 9 institutes, perform a series of 5-day hindcasts, each initialised from reanalyses. After describing the common experimental protocol and detailing each model configuration, a gridded temperature data set is derived from observations and used to show that all the models have a warm bias over parts of the Midwest. Additionally, a strong diurnal cycle in the screen-temperature bias is found in most models. In some models the bias is largest around midday, while in others it is largest during the night. At the Department of Energy Atmospheric Radiation Measurement Southern Great Plains (SGP) site, the model biases are shown to extend several kilometers into the atmosphere. Finally, to provide context for the companion papers, in which observations from the SGP site are used to evaluate the different processes contributing to errors there, it is shown that there are numerous locations across the Midwest where the diurnal cycle of the error is highly correlated with the diurnal cycle of the error at SGP. This suggests that conclusions drawn from detailed evaluation of models using instruments located at SGP will be representative of errors that are prevalent over a larger spatial scale.
    Print ISSN: 0148-0227
    Topics: Geosciences , Physics
    Published by Wiley on behalf of American Geophysical Union (AGU).
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Publication Date: 2018-03-06
    Description: Many numerical weather prediction and climate models exhibit too warm lower tropospheres near the mid-latitude continents. The warm bias has been shown to coincide with important surface radiation biases that likely play a critical role in the inception or the growth of the warm bias. This paper presents an attribution study on the net radiation biases in 9 model simulations, performed in the framework of the CAUSES project (Clouds Above the United States and Errors at the Surface). Contributions from deficiencies in the surface properties, clouds, water vapor and aerosols are quantified, using an array of radiation measurement stations near the ARM SGP site. Furthermore, an in-depth analysis is shown to attribute the radiation errors to specific cloud regimes. The net surface shortwave radiation is overestimated in all models throughout most of the simulation period. Cloud errors are shown to contribute most to this overestimation, although non-negligible contributions from the surface albedo exist in most models. Missing deep cloud events and/or simulating deep clouds with too weak cloud-radiative effects dominate in the cloud-related radiation errors. Some models have compensating errors between excessive occurrence of deep cloud, but largely underestimating their radiative effect, while other models miss deep cloud events altogether. Surprisingly, even the latter models tend to produce too much and too frequent afternoon surface precipitation. This suggests that rather than issues with the triggering of deep convection, cloud-radiative deficiencies are related to too weak convective cloud detrainment and too large precipitation efficiencies.
    Print ISSN: 0148-0227
    Topics: Geosciences , Physics
    Published by Wiley on behalf of American Geophysical Union (AGU).
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Publication Date: 2018-02-28
    Description: Many weather forecast and climate models simulate warm surface air temperature (T 2m ) biases over mid-latitude continents during the summertime, especially over the Great Plains. We present here one of a series of papers from a multi-model intercomparison project (CAUSES: Cloud Above the United States and Errors at the Surface), which aims to evaluate the role of cloud, radiation, and precipitation biases in contributing to the T 2m bias using a short-term hindcast approach during the spring and summer of 2011. Observations are mainly from the Atmospheric Radiation Measurement (ARM) Southern Great Plains (SGP) sites. The present study examines the contributions of surface energy budget errors. All participating models simulate too much net shortwave and longwave fluxes at the surface but with no consistent mean bias sign in turbulent fluxes over the Central U.S. and SGP. Nevertheless, biases in the net shortwave and downward longwave fluxes, as well as surface evaporative fraction (EF) are contributors to T 2m bias. Radiation biases are largely affected by cloud simulations, while EF bias is largely affected by soil moisture modulated by seasonal accumulated precipitation and evaporation. An approximate equation based upon the surface energy budget is derived to further quantify the magnitudes of radiation and EF contributions to T 2m bias. Our analysis ascribes that a large EF underestimate is the dominant source of error in all models with a large positive temperature bias, whereas an EF overestimate compensates for an excess of absorbed shortwave radiation in nearly all the models with the smallest temperature bias.
    Print ISSN: 0148-0227
    Topics: Geosciences , Physics
    Published by Wiley on behalf of American Geophysical Union (AGU).
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6458-6465 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Particulate composites with negative stiffness inclusions in a viscoelastic matrix are shown to have higher thermal expansion than that of either constituent and exceeding conventional bounds. It is also shown theoretically that other extreme linear coupled field properties including piezoelectricity and pyroelectricity occur in layer- and fiber-type piezoelectric composites, due to negative inclusion stiffness effects. The causal mechanism is a greater deformation in and near the inclusions than the composite as a whole. A block of negative stiffness material is unstable, but negative stiffness inclusions in a composite can be stabilized by the surrounding matrix and can give rise to extreme viscoelastic effects in lumped and distributed composites. In contrast to prior proposed composites with unbounded thermal expansion, neither the assumptions of void spaces nor slip interfaces are required in the present analysis. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4757-4760 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of Schottky barrier contacts to n-type 6H-SiC for a number of metals chosen to include a variety of physical and chemical properties has been investigated. The metals (Pd, Au, Ag, Tb, Er, Mn, Al, and Mg) were deposited onto room temperature surfaces terminated with a submonolayer coverage of oxygen. The metal/6H-SiC interface chemistry and Schottky barrier height φB during contact formation were obtained with x-ray photoemission spectroscopy; the electrical properties of subsequently formed thick contacts were characterized by current-voltage and capacitance-voltage techniques. The øB values for these metals extend over a wide 1.3 eV range. To a varying degree φB depends on the 6H-SiC crystal face (Si vs C). Mg and Al (Si face of latter) have φB=0.3 eV, a value which is suitable for nonalloyed ohmic contacts.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6375-6381 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall measurements were conducted at temperatures up to 1000 K on unintentionally doped n-type β(3C)- and α(6H)-SiC thin films epitaxially grown on both on-axis and vicinal Si (100) and α(6H)-SiC (0001) by chemical vapor deposition. The carrier concentration versus temperature data were analyzed using a compensation model. The β-SiC films grown on Si were highly compensated (NA/ND=0.73–0.98). The compensation ratio was not as large in the SiC films grown on α-SiC (NA/ND=0.36, for β-SiC on α-SiC, and 0.02, for α-SiC on α-SiC). The donor ionization energy for β-SiC on Si was calculated to be 14–21 meV. Analogous values for β- and α-SiC films on α-SiC were 33 and 84 meV, respectively. These values are smaller than those for N determined from photoluminescence studies.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1765-1767 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature photoreflectance (PR) was used to investigate the surface state densities of GaAs and In0.52Al0.48As surface intrinsic-n+ structures. The built-in electric field and thus the surface barrier height are evaluated using the observed Franz–Keldysh oscillations in the PR spectra. Based on the thermionic emission theory and current-transport theory, the surface state density as well as the pinning position of the Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 920-926 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lattice-matched In0.53Ga0.47As/In0.52Al0.48As single quantum well (SQW) structure grown by gas source molecular beam epitaxy has been investigated by photoreflectance (PR) and photoluminescence (PL). The PR measurements allowed the observation of interband transitions from the heavy- and light-hole valence subbands to the conduction subbands. The transition energies measured from the PR spectra agree with those calculated theoretically. Two features corresponding to the ground state transition coming from the SQW and the band gap transition generated from the buffer layer are observed in the PL spectra and are in good agreement with the PR data. The effect of the temperature on the transition energies is essentially same as that in the gap transition of the bulk structure. The values of the Varshni coefficients of InGaAs/InAlAs were obtained from the relation between the exciton transition energy and the temperature. The built-in electric field could be determined and located from a series of PR spectra by sequential etching processes. The phase spectra obtained from the PR spectra by the Kramers–Kronig transformation were analyzed in terms of the two-ray model, and calculated the etching depth in each etching, and thus leading to the etching rate. The etching rate obtained from phase shift analysis agrees with that measured by atomic force microscopy. The etching results suggest that a built-in electric field exists at the buffer/substrate interface and it also enables us to determine the etching rate. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1296-1298 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase images of 20–30-nm-diam silicon spheres were collected by holographic methods in a field-emission transmission electron microscope. The spherical geometry enables the effect of specimen thickness on the electron-wave phase to be separated from the intrinsic Si electron-optical refractive effects allowing a determination of the mean inner potential Φ0. This work finds Φ0=11.9±0.9 V characterizing amorphous Si and 12.1±1.3 V characterizing crystalline Si. The phase images can resolve a 2-nm-thick native oxide layer and give Φ0 for SiO2=10.1±0.6 V. The phase data can quickly recognize a surface layer, and the effect of a surface layer on the determination of the bulk mean potential can be minimized. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2857-2859 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Built-in electric fields and interfacial state densities (Dit) in a series of oxide–GaAs heterostructures fabricated by in situ molecular beam epitaxy were studied using room temperature photoreflectance. The samples investigated were air-, Al2O3–Ga2Ox–, and Ga2O3(Gd2O3)–GaAs. We found that the built-in electric fields are 48, 44, and 38 kV/cm for air-, Al2O3-, and Ga2Ox–GaAs samples, respectively. For the Ga2O3(Gd2O3)–GaAs sample, the built-in electric field is negligibly small, indicating a very low interfacial state density. Estimated by the low field limit criterion, Dit is less than 1×1011 cm−2 eV−1. Our results on the Ga2O3(Gd2O3)–GaAs sample are consistent with the data obtained previously using capacitance–voltage measurements in quasistatic/high frequency modes and photoluminescence measurements. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...