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  • Springer  (79)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 12 (1990), S. 1465-1474 
    ISSN: 0392-6737
    Keywords: Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Saturation spectroscopy ; other nonlinear spectroscopic techniques
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary The two-photon absorption spectra of GaAs/AlGaAs multiple quantum well and superlattice structures have been experimentally investigated by means of the nonlinear luminescence technique in different polarization configurations. A strong excitonic effect overlapping the interband two-photon spectrum has been found and the selection rules for the excitonic transitions have shown to greatly change for different polarizations. The comparison of linear and nonlinear absorption measurements provides important information on the excited states of excitons in multiple quantum wells.
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  • 2
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Perfusion of the isolated rat heart at constant heart rate and coronary flow with the inhibitor of cyclic nucleotide phosphodiesterase, pentoxifylline (10−4 moles/l), produced no significant effect on the maximum rate and the peak of contraction, but increased the maximum rate of relaxation. cAMP level and cAMP-dependent protein kinase activity were increased in the absence of changes in cGMP. The results were identical in hearts of reserpinized rats.
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  • 3
    ISSN: 1432-1793
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Allozyme electrophoresis and morphometric analyses were used to investigate the stock structure of European anchovies (Engraulis encrasicolus L.) captured by Italian vessels in the Adriatic Sea. Twenty four putative enzyme loci were studied, all of which exhibited genotypic proportions in accordance with Hardy-Weinberg predictions. Two loci, IDHP-2 * (isocitrate dehydrogenase, 1.1.1.42) and G3PDH-2 * (glycerol-3-phosphate dehydrogenase, 1.1.1.8), showed significant allele-frequency differences among samples. IDHP-2 * 100 frequencies ranged between 0.35 and 0.88, with lower frequencies recorded in northern waters and areas close to the Italian coastline, while G3PDH-2 * 100 frequencies followed a similar, if less distinct, pattern. For both loci, the trends observed were spatially stable over a 2 yr sampling period. A putative stock-boundary was superimposed onto a map of IDHP-2 * 100 frequencies, and a bootstrapped dendrogram confirmed the genetic separation of the two putative stocks, one located around the north-western Adriatic and the other in the central-southern region. Canonical variate analysis (CVA) of morphometric data collected using a “truss network” indicated that the two putative stocks were morphologically distinct; 89.6 and 88.3% of north-western and central-southern anchovies, respectively, were correctly assigned by discriminant-function analysis. This variation may be related to the presence of two anchovy colour phenotypes, silver and blue, in the Adriatic Sea. Silver anchovies are characteristic of northern areas, while the larger blue fish are found mainly in the deeper southern waters. Current assessment models for the fishery are based on the concept of a consistent identity between consecutive catches at single ports, which our data reject. We discuss the possibility of partitioning fishing effort based on the proportions of the two stocks landed at individual ports.
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 10 (1988), S. 1093-1114 
    ISSN: 0392-6737
    Keywords: Interfaces ; PACS 71.35 ; Excitons and related phenomena (including electron-hole drops)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Sono state effettuate misure di fotoluminescenza, di fotoeccitazione e di riflettività, a varie temperature, su una serie di strutture a pozzi quantici GaAs/Ga1−x Al x As, cresciute con epitassia da fasci molecolari. I risultati della fotoluminescenza emessa nello strato depositato di GaAs sono analizzati e le sue proprietà ottiche sono collegate alle condizioni di crescita. Lo spostamento Stokes della riga di emissione dell'eccitone nel pozzo quantico è studiato in dipendenza delle varie condizioni di eccitazione. Si trova una considerevole diminuzione dello spostamento Stokes nel caso di eccitazione intensa e non risonante. Anche la fotoluminescenza estrinseca e la sua dipendenza dalla temperatura sono interpretate. Inoltre si mostra che gli effetti di temperatura su entrambi gli spettri del cristallo GaAs e del pozzo quantico chiariscono i ruoli del contributo eccitonico e delle transizioni interbanda.
    Abstract: Резюме Проведены измерения фотолюминесценции, фотолюминесценции возбуждения и козффициента отражения при различных температурах на образцах структур квантовых ям GaAs/Ga1−x Al x As, выраўенных с помощью эпитаксии молекулярного пучка. Анализируются некоторые данные по фотолюминесценции для буферных слоев GaAs для определения корреляции между оптическими свойствами и условиями выращивания. При различных условиях возбуждения исследуется сдвит Стокса линии испускания экситона на квантовых ямах. Наблюдается эаметное уменьшение сдвига Стокса в случае нерезонанснопо н интенсивного возбуждений. Также интерпретируются примесная фотолюминесценция и ее температурная зависимость. Показывается, что влияние температуры на обьемный спектр и спектр квантовых ям проясняет экситонные особенности и вклад межзонных переходов.
    Notes: Summary Measurements of photoluminescence, excitation photoluminescence and reflectance are performed at various temperatures on a series of GaAs/Ga1−x Al x As quantum well structures grown by molecularbeam epitaxy. The selective photoluminescence data of the GaAs buffer layers are analysed in order to correlate the optical properties with the growth conditions. The Stokes shift of the excitation emission line from quantum wells is investigated under various excitation conditions. A considerable decrease of the Stokes shift is observed in the case of nonresonant and intense excitations. Also the extrinsic photoluminescence, as well as its temperature dependence, are interpreted. In addition, the temperature effects on both the bulk and quantum well spectra are shown to clarify the excitation features and the contribution of the interband transitions.
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 10 (1988), S. 529-545 
    ISSN: 0392-6737
    Keywords: Interfaces
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Viene presentato uno studio sistematico delle interazioni a molti corpi indotte da pompaggio ottico, inteso in condizioni quasi stazionarie, in supereticoli di GaAs/Al x Ga1−x As. Misure di luminescenza spontanea e stimolata e di guadagno ottico in un ampio intervallo di temperature e con diverse lughezza d'onda di eccitazione hanno messo in evidenza effetti di «band-filling» e di amplificazione ottica. Gli effetti dei processi di rilassamento da elettroni caldi, della rinormalizzazione della gap e delle interazioni eccitoniche sono discussi sulla base delle forme di riga della luminescenza. Gli spettri sono interpretati come la conseguenza della fotogenerazione di un plasma elettrone-buca che ricombina alle energie degli eccitoni quantizzati. Le misure di guadagno ottico mostrano un fattore di guadagno maggiore che nel semiconduttore tridimensionale e che resta costante sino a circa 140 K. In un supereticolo con concentrazione di alluminio prossima al «cross over» diretto-indiretto, il pompaggio ottico risonante con gli stati nella buca di potenziale ha mostrato una nuova banda di emissione attribuita agli effetti delΓ-X mixing delle funzioni d'onda elettroniche nella buca e nella barriera.
    Abstract: Резюме Мы систематически исследуем многочастичные взаимодействия, индуцированные квазистационарной интенсивной оптической накачкой в полупроводниковых суперрешетках GaAs/AlxGa1−xAs. Измерения спонтанной и стимулированной люминесценции и оптического усиления, проведенные при различных температурах и при нескольких длинах волн возбуждения, позволяют нам наблюдать эффекты заполнения зон и оптического усиления в этих 2D структурах. Квазиравновесные распределение горячих носителей и перенормировка ширины запрещенной зоны влияют на формы линий спонтанного излучния. Экситонные взаимодействия вызывают голубое смещение линий излучения. Полученные спектры интерпретируются, как следствие электрон-дырочной плазмы, которая, в основном рекомбинирует прп кванрованных экситонных энергиях. Измерения оптического усиления определяют коэффициент усиления, который остается постоянным вплоть до 140 K, и оказывается бодьше, чем измеренный в трехмерных кристлллах GaAs. В суперрешетке, имеющей концентрацию алюминия вблизи прямого-косвенного кроссовера, квазирезонансная оптическая накачка обнаруживает новую спектральную особенность в стимулированном излучении, котоая приписывается смешиванию электронных волновых функций в яме и в барьере.
    Notes: Summary We report a systematic study of the many-body interactions induced by quasi-stationary intense optical pumping in semiconductor superlattices of GaAs/Al x Ga1−x As. Spontaneous and stimulated luminescence and optical-gain measurements performed at different temperatures and with several exciting wavelengths allow us to observe band filling effects and optical amplification in these 2D structures. Hotcarrier quasi-equilibrium distribution and band gap renormalization effect the spontaneous-emission line shapes; excitonic interactions slightly blueshift the emission lines. The spectra have been interpreted as a consequence of the electron hole plasma occurring which mainly recombines at the quantized exciton energies. Optical-gain measurements have shown a gain factor which remains constant up to about 140K and is higher than the one measured in three-dimensional GaAs crystals. In a superlattice having aluminium concentration near the direct-indirect crossover, quasiresonant optical pumping in the well has shown a new spectral feature in the stimulated emission which has been tentatively ascribed to a Γ-X mixing of the electronic wave functions in the well and in the barrier.
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 11 (1989), S. 1049-1055 
    ISSN: 0392-6737
    Keywords: Excitons and related phenomena (including electron-hole drops)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Lo spettro di riflettività ad incidenza normale degli eccitoni nei pozzi quantistici multipli di GaAs/Ga1−x Al x As è calcolato nell’ambito dell’approssimazione locale. Si mostra con la forma della linea di riflettività dipende in gran misura dalla forma geometrica del campione. Usando parametri realistici di una struttura a pozzi quantistici multipli, si ottiene un’ottima approssimazione della curva di riflettività sperimentale, che fornisce così energie eccitoniche, forze dell’oscillatore e parameri di ampliamento eccitonico.
    Abstract: Резюме В рамках приближения линейного отклика вычисляется спекрт отражательной способности экситонов при нормальном падении для множественных квантовых ям в GaAs/Ga1−x Al x As. Показывается, что форма линии отражательной способности сильно зависит от геометрии образца. Используя реалистические параметры структуры множественных квантовых ям, мы получаем хорошее соответствие с экспериментальной кривой для отражательной способности. Получаются энергии экситонов, силы осцилляторов и парам⪟тры экситонного уширения.
    Notes: Summary The normal incidence reflectivity spectrum of excitons in GaAs/Ga1−x Al x As multiple quantum wells is calculated within the local response approximation. It is shown that the reflectivity lineshape strongly depends on the sample geometry. Using realistic parameters of a multiple quantum well structure, we obtain an excellent fit of the experimental reflectivity curve, thus giving exciton energies, oscillator strengths and exciton broadening parameters.
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  • 7
    ISSN: 0392-6737
    Keywords: Surface and interface electron states ; Excitons and related phenomena (including electron-hole drops) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary Quantum wire heterostructures, such as V- and T-shaped wires, are very promising candidates for low-threshold lasing. A crucial issue is the excitonicvs. free-carrier nature of the radiative recombination. Here, we report on magnetophotoluminescence studies of GaAs and InGaAs V-shaped wires that allow to discriminate different regimes of radiative recombination.
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1219-1228 
    ISSN: 0392-6737
    Keywords: Excitons and related phenomena (including electron-hole drops) ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Optical properties of thin films surfaces and layer structures (superlattices, heterojunctions and multilayers) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We present a comprehensive discussion of the excitonic properties of V-shaped GaAs and InGaAs quantum wires grown on patterned substrates. Systematic linear and non-linear spectroscopic studies have been performed in order to clarify the impact of lateral confinement on the exciton wave function, namely: enhanced exciton binding energy, localization in magnetic field, recombination from excited states and multiphoton absorption. The careful evaluation of the electron confinement energies, based on the actual quantum wire profile obtained by TEM micrographs, including the internal piezoelectric field induced by off-diagnoal terms of strain tensor, reproduces quite well the measured one-dimensional states. Finally, application of quantum wires in a p-i-n wave guide for bistable operation is demonstrated.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 9 (1987), S. 1313-1322 
    ISSN: 0392-6737
    Keywords: Other inorganic materials
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto L’andamento spettrale del coefficiente di assorbimento α(2) diretto a due fotoni relativo a transizioni di tipo interbanda è stato studiato in un largo intervallo di energie di eccitazione in diversi materiali (ZnO, CuCl e Bi4Ge3O12). I risultati sperimentali hanno mostrato che l’andamento spettrale è ben descritto da una formula parametrica che contiene termini con differenti dipendenze dall’energia. In particolare, per 2ħω-E g 〉≈400 meV, viene riportata la prima evidenza sperimentale della dipendenza (2ħω-E g )5/2. Di conseguenza, ciascun modello proposto per la valutazione della curva di dispersione di α(2) fornisce una corretta dipendenza dall’energia solo in un limitato intervallo di energie di eccitazione. Questo è dovuto alle pesanti approssimazioni riguardanti l’elemento di matrice di dipolo. Per spiegare la dipendenza spettrale dell’assorbimento a due fotoni è necessario, quindi, considerare tutti gli stati intermedi coinvolti nelle transizioni tenendo conto correttamente della dipendenza dall’energia degli elementi di matrice di dipolo. In questo modo, si può mostrare come il maggiore contributo all’intensità dell’oscillatore sia dovuto a transizioni totalmente permesse nei punti critici.
    Abstract: Резюме В широкой области энергий возбуждения исследуется спектральное поведение коэффицнента прямого двух-фотонного поглощения (α(2)) в ZnO, CuCl и Bi4Ge3O12. Экспериментальные результаты показывают, что спектраьное поведение хорошо описывается параметрической формулой, содержащей члены с различной энергетической завимостью. В частности, для 2ħω-E g〉−400 мэВ впервые полчена экспериментальная зависимость (2ħω-E g)5/2. Пюбая из моделей, предложенных для описания α(2) дисперсионной кривой, дает, правильную энергетическую зависимость в огарниченной области, вследствие грубого приближения, сделанного при вычислении липольных матричных элемементов. Для объяснения спектральной занисимости коэффициента двух-фотоннго поглощения необходимо учитывать все промежуточные состояния и энергегескую зависимость дипольных матричных элементов. Показывается, что наиболыший вклад в силу осцилляторов возникает из переходов, полностью разрешенных в критических точках.
    Notes: Summary The spectral behaviour of the direct interband two-photon absorption coefficient α(2) in ZnO, CuCl and Bi4Ge3O12 has been investigated in a large excitation energy range. The experimental results have shown that the α(2) spectral behaviour is well described by a parametric formula containing terms with different energy dependence. In particular, for 2ħω-E g〉≈400 meV, the first experimental evidence of 2ħω-E g)5/2 dependence has been obtained. As a consequence, each of the various models proposed to predict the α(2) dispersion curve gives the correct energy dependence in a limited energy range, due to the poor approximation made in the evaluation of dipole matrix elements. To explain the spectral dependence of the two-photon absorption coefficient, consideration of all the intermediate states is required, with the energy dependence of the dipole matrix elements properly considered. It is shown that the greatest contributions to the oscillator strength come from transitions totally allowed at the critical points.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 10 (1988), S. 847-859 
    ISSN: 0392-6737
    Keywords: Semiconductor-to-semiconductor contacts,p-n junctions ; Excitons and related phenomena (including electron-hole drops)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si presenta uno studio sistematico della luminescenza e della riflettività di strutture a buche quantiche multiple di GaAs/Ga1−x Al x As da 12K a temperatura ambiente. Un confronto diretto tra i picchi di fluorescenza dovuti a stati nelle buche quantiche e a quelli nell'arseniuro di gallio, cosí come il confronto tra fotoluminescenza e riflettività, forniscono una prova diretta del ruolo degli eccitoni a tutte le temperature. L'analisi spettrale della fluorescenza a temperatura ambiente ci consente di identificare il contributo degli eccitoni di buca pesante, degli eccitoni di buca leggera e degli stati del continuo. Un'analisi dettagliata delle energie di transizione in funzione della temperatura mostra che l'energia di confinamento aumenta del 5% quando la temperatura aumenta da 12K a temperatura ambiente. Questo effetto è dovuto alla variazione delle masse effettive dell'elettrone e della buca.
    Abstract: Резюме Мы исследуем фотолюминесценцию и отражение структур множественных квантовых ям в GaAs/Ga1−x Al x As в области от 12K до комнатной температуры. Прямое сравнение между эмиссионными пиками для квантовых ям и для объема арсенида галлия, а также между спектрами фотолюминесценции и отражения обнаруживает наличие экситонных особенностей при всех исследованных температурах. Подгоняя форму линий для спектра фотолюминесценции при комнатной температуре, мы определяем вклад экситонов тяжелых дырок, экситонов легких дырок и состояний непрерывного спектра. Из подробного анализа энергий перехода в зависимости от температуры показывается, что энергия удержания увеличивается на 5% при возрастании температуры от 12K до комнатной температуры. Отмечается, что этот эффект обусловлен изменением эффективных масс электрона и дырки.
    Notes: Summary We report a study of photoluminescence and reflectivity of GaAs/Ga1−x Al x As multiple quantum well structures from 12 K to room temperature. A direct comparison between the emission peaks of the quantum wells and of bulk GaAs, as well as between the photoluminescence and reflectance spectra, shows strong evidence of exciton features up to room temperature. By means of a line shape fit of the room temperature emission spectrum, we determine the contribution of the heavy and light hole excitons and of the continuum states. From a detailed analysis of the transition energies, a 5% increase of the confinement energy is found to occur when the temperature increases from 12 K to room temperature. This effect is shown to be due to the change in the electron and hole effective masses.
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