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  • 1
    Electronic Resource
    Electronic Resource
    Nutrient intake and protein metabolism: responses to feeding (1997)
    Springer
    European journal of nutrition 36 (1997), S. 332-335 
    Details
    ISSN: 1436-6215
    Keywords: Nutrient intake ; protein metabolism ; protein synthesis ; growth ; energy expenditures ; Nährstoffaufnahme ; Proteinstoffwechsel ; Proteinsynthese ; Wachstum ; Energieaufwand
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Medicine
    Description / Table of Contents: Zusammenfassung Eine Zunahme von fettfreiem Gewebe tritt auf, wenn die Proteinsynthese größer ist als der Proteinabbau. Obwohl während des Wachstums von der Geburt bis zur Reife die absoluten Proteinsynthese- und -abbauraten ansteigen, nehmen dagegen die fraktionellen Raten ab. Bcide Prozesse reagieren auf die Nährstoffaufnahme. Es gibt aber deutliche Unterschiede zwischen den verschiedenen Geweben. Protein, Kohlenhydrate und Fett können den Proteinansatz bei unreifen Tieren und Kindern stimulieren. Die zugrundeliegenden Mechanismen und die Energieaufwendungen scheinen jedoch unterschiedlich zu sein.
    Notes: Summary Lean tissue growth occurs when the rate of protein synthesis exceeds the rate of protein breakdown. Althoughabsolute rates of protein synthesis and breakdown rise during growth from birth to maturityfractional rates fall. Both these processes are sensitive to nutrient intake but responses to feeding vary greatly amongst different tissues. Protein, carbohydrate and fat can all stimulate body protein accretion in immature animals and in children but the mechanisms by which they do so, and the energy expenditures involved, seem to be different.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01617817
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  • 2
    Electronic Resource
    Electronic Resource
    The effects of non-protein energy supplements on muscle protein synthesis during feeding and fasting (1997)
    Springer
    European journal of nutrition 36 (1997), S. 352-352 
    Details
    ISSN: 1436-6215
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01617822
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  • 3
    Electronic Resource
    Electronic Resource
    Ionic conductivity of perovskite LaCoO3 measured by oxygen permeation technique (1997)
    Springer
    Journal of applied electrochemistry 27 (1997), S. 71-75 
    Details
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract Oxygen permeation measurement is demonstrated, not only for a mixed oxide ionic and electronic conductor, but also as a new alternative to determine ambipolar conductivities, which can be usually reduced to be partial conductivities (either ionic or electronic). As a model system and an end member of an important oxygen permeable La1-xSrxCoO3-δ dense membrane system, LaCoO3 dense ceramic was measured with respect to the thickness, temperature and oxygen partial pressure dependencies of its oxygen permeability. Within the thickness range used (down to 0.041cm), the oxygen permeation of LaCoO3 was found to be purely controlled by bulk diffusion with activation energies between 260–300kJmol-1. Its ionic conductivity and oxygen self-diffusion coefficient as functions of oxygen partial pressure were also derived from permeability data. PO2-0.46 and PO2-0.31 relations were found in the high pressure (1.01–10-2bar) and low pressure (10-2.8–10-3.4bar) ranges, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1026471016927
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  • 4
    Electronic Resource
    Electronic Resource
    Laser chemical physics I: State selective excitation (1982)
    Springer
    Applied physics 28 (1982), S. 112-123 
    Details
    ISSN: 1432-0649
    Keywords: 33 ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00697836
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  • 5
    Electronic Resource
    Electronic Resource
    Dopant diffusion and segregation in semiconductor heterostructures: Part 2. B in GexSi1-x/Si structures (1999)
    Springer
    Applied physics 68 (1999), S. 19-24 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.72.Tt; 61.72.Ss; 61.72.Yx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: x Si1-x/Si heterostructures have been obtained. Here the chemical effects seem to be of less importance. The Fermi-level effect determines the ionized boron solubilities in GexSi1-x and in Si, as well as the thermal equilibrium concentration of the singly-positively-charged crystal self-interstitials I+ which governs the boron diffusion process. The junction carrier concentration affects the concentration of I+ and solubility of B in the region and hence controls B diffusion across the heterojunction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050848
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  • 6
    Electronic Resource
    Electronic Resource
    Oligomerization of 3′-amino-3′-deoxyguanosine-5′-phosphorimidazolidate on a d(CpCpCpCpC) template (1987)
    Springer
    Journal of molecular evolution 25 (1987), S. 97-99 
    Details
    ISSN: 1432-1432
    Keywords: Template synthesis ; Nucleotide analogs ; Oligomerization
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary 3′-Amino-3′-deoxyguanosine-5′-phosphorimidazolidate (ImpGnh 2) oligomerizes more rapidly and regiospecifically than related nucleotide derivatives on a d(CpCpCpCpC) template. The greater nucleophilicity of the amino group leads to efficient oligomerization even when the structure of the double-helical complex formed by the template and the substrate is not optimal for reaction. The use of amine-containing analogues should permit us to develop models of potentially prebiotic polymerization reactions that cannot be studied easily using natural nucleotides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02101750
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  • 7
    Electronic Resource
    Electronic Resource
    Dopant diffusion and segregation in semiconductor heterostructures: Part 1. Zn and Be in III-V compound superlattices (1999)
    Springer
    Applied physics 68 (1999), S. 9-18 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.72.Vv; 61.72.Ss; 61.72.Yx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: chemical effect on the neutral species; and (ii) a Fermi-level effect on the ionized species, because, in addition to the chemical effect, the solubility of the species also has a dependence on the semiconductor Fermi-level position. For Zn and Be in GaAs and related compounds, their diffusion process is governed by the doubly-positively-charged group III element self-interstitials (I2+ III), whose thermal equilibrium concentration, and hence also the diffusivity of Zn and Be, exhibit also a Fermi-level dependence, i.e., in proportion to p2. A heterojunction consists of a space-charge region with an electric field, in which the hole concentration is different from those in the bulk of either of the two layers forming the junction. This local hole concentration influences the local concentrations of I2+ III and of Zn- or Be-, which in turn influence the distribution of these ionized acceptor atoms. The process involves diffusion and segregation of holes, I2+ III, Zn-, or Be-, and an ionized interstitial acceptor species. The junction electric field also changes with time and position.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050847
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  • 8
    Electronic Resource
    Electronic Resource
    Dopant diffusion and segregation in semiconductor heterostructures: Part III, diffusion of Si into GaAs (1999)
    Springer
    Applied physics 69 (1999), S. 313-321 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.72Vv; 61.72Ss; 61.72Yx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. We have mentioned previously that in the third part of the present series of papers, a variety of n-doping associated phenomena will be treated. Instead, we have decided that this paper, in which the subject treated is diffusion of Si into GaAs, shall be the third paper of the series. This choice is arrived at because this subject is a most relevent heterostructure problem, and also because of space and timing considerations. The main n-type dopant Si in GaAs is amphoteric which may be incorporated as shallow donor species SiGa + and as shallow acceptor species SiAs -. The solubility of SiAs - is much lower than that of SiGa + except at very high Si concentration levels. Hence, a severe electrical self-compensation occurs at very high Si concentrations. In this study we have modeled the Si distribution process in GaAs by assuming that the diffusing species is SiGa + which will convert into SiAs - in accordance with their solubilities and that the point defect species governing the diffusion of SiGa + are triply-negatively-charged Ga vacancies VGa 3-. The outstanding features of the Si indiffusion profiles near the Si/GaAs interface have been quantitatively explained for the first time. Deposited on the GaAs crystal surface, the Si source material is a polycrystalline Si layer which may be undoped or n+-doped using As or P. Without the use of an As vapor phase in the ambient, the As- and P-doped source materials effectively render the GaAs crystals into an As-rich composition, which leads to a much more efficient Si indiffusion process than for the case of using undoped source materials which maintains the GaAs crystals in a relatively As-poor condition. The source material and the GaAs crystal together form a heterostructure with its junction influencing the electron distribution in the region, which, in turn, affects the Si indiffusion process prominently.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390051007
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  • 9
    Electronic Resource
    Electronic Resource
    On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects (1995)
    Springer
    Applied physics 61 (1995), S. 397-405 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.70; 61.70; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, an amphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancy V 2- Ga and the triply positively charged defect complex (ASGa+V As)3+, with AsGa being the antisite defect of an As atom occupying a Ga site and V As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect system V 2- Ga/(AsGa+V As)3+ is supposed to be able to pin the GaAs Fermi level at approximately the E v +0.6 eV level position, which requires that the net free energy of the V Ga/(AsGa+V As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about the E v +1.2 eV level position instead of the needed E v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540114
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  • 10
    Electronic Resource
    Electronic Resource
    On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects (1995)
    Springer
    Applied physics 61 (1995), S. 397-405 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV Ga 2− and the triply positively charged defect complex (ASGa+V As)3+, with AsGa being the antisite defect of an As atom occupying a Ga site andV As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV Ga 2− /(AsGa+V As)3+ is supposed to be able to pin the GaAs Fermi level at approximately theE v +0.6 eV level position, which requires that the net free energy of theV Ga/(AsGa+V As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE v +1.2 eV level position instead of the neededE v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540114
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