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  • BioMed Central  (81)
  • American Chemical Society (ACS)  (59)
  • American Institute of Physics (AIP)
  • American Association for the Advancement of Science (AAAS)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 61-68 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of high-dose silicon and arsenic ion implantation on the electrical and structural properties of silicon layers are investigated. Combining electrical, transmission electron microscopy, and triple-crystal x-ray-diffraction measurements made it possible to characterize the effects of thermal annealing both on defect annihilation mechanisms and on electrical doping activation. It is clearly shown that a low-temperature (≤450 °C) electrical activation process is taking place in the amorphous surface layer induced by high-dose ion implantation. This phenomenon is found to be completely independent of the recrystallization regrowth by solid phase epitaxy which occurs at higher temperature. This electrical activation process is found to be well described by a local relaxation model involving point defect migration.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5261-5261 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As nonmagnetic yttrium is substituted for terbium, TbAg changes from a conventional antiferromagnet into a complex magnetic system with components of both commensurate and incommensurate spin structures and bulk magnetic properties typical of spin-glass behavior for x≤0.5. We have carried out neutron diffraction experiments on polycrystalline samples with x=0.15, 0.5, and 1.0 to complement our earlier studies for x=0.3.1 For x=0.5, the system orders at T≈58 K into the mixed structure observed for x=0.3, but with a much sharper (1/2 1/2 0) peak. On cooling below 40 K the incommensurate peaks almost disappear, remaining only as low-intensity shoulders of the commensurate peak at the lowest temperature measured (T=4 K). Hysteresis is observed in the relative intensity of the two components of the structure between 45 and 55 K. For x=0.15, the system orders at T≈18 K into the two-component structure, but with an approximately constant intensity ratio and no evidence of hysteresis, similar to the behavior found for x=0.3. Thus, as the Tb concentration decreases, the relative stability of the commensurate and incommensurate structures appears to change. This balance between competing magnetic structures will be related to the spin-glass properties observed in this system.
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For this cubic pseudobinary compound, the bifurcation of the magnetization (M) vs temperature for warming and cooling in low fields (after zero-field cooling) indicates a spin-glass freezing point (Tg) of ∼20 K. Isotherms of M vs cooling field show zero spontaneous moments down to 4.2 K but an initial susceptibility that almost diverges below Tg〈sbxs〉. From rotational measurements of M as a vector in a fixed field (H) at 4.2 K, the anisotropy field produced by field cooling (HK) is found to turn rigidly with the sample for H below ∼1 kOe. At higher H, HK rotates up to some angle relative to H and then stays fixed as the sample continues to turn, thus exhibiting a frictional rotation relative to the sample. Nevertheless, HK remains sizeable in magnitude (∼12 kOe). Comparisons are made with analogous results for isostructural (Tb, Y) Ag, where spin-glass order coexists with antiferromagnetism, as well as for various prototypal spin-glass alloys.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 4014-4016 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present an apparatus for fabricating ion exchanged glass waveguides with reproducible characteristics. It consists of a vertical furnace with a uniform temperature zone, which is flat to within 1 °C over the sample length, a silica crucible for containing molten salt, a metallic sample holder made of either aluminum or stainless steel, and a motor-driven sample lowering system. The time and temperature are accurately controlled to produce waveguides of desired index profiles. © 1997 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3378-3381 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-resolution noncontact scanned probe technique has been developed for sampling the internal signals of an operating integrated circuit. The signal waveform is extracted by sensing the localized electrostatic force between a small probe and point on the circuit being measured. A heterodyne approach is used to enable the sampled measurement of high-frequency digital or analog waveforms. In conjunction with a nulling method, the technique is capable of accurate signal measurement without complex calibration or probe positioning, and can be performed over passivated structures. Measurement of digital and analog signals is demonstrated with a voltage accuracy of less than 100 mV.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3377-3384 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the effects of annealing temperature on phosphorus-implanted silicon films is carried out. Fourier transform infrared spectroscopy has been performed with two different instruments in the spectral ranges of 0.75–4 μm and 3–25 μm. In the first spectrum range special attention was given to the influence of implantation dose on reflectivity. The minimum reflectivity associated with plasma resonance has been fully employed for estimation of the electrical activation of implanted impurities. Other conclusions concerning the activation of free carriers (implanted impurities) with implantation dose and annealing temperature have been reached.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5332-5341 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-induced and frequency-scanned infrared photothermal radiometry was applied to a crystalline-Si photoconductive device, and to polysilicon thin-film photoconductors deposited on oxidized Si substrates by an LPCVD method. A detailed theoretical model for the radiometric signal was developed and used to measure the free photoexcited carrier plasma recombination lifetime, electronic diffusivity and surface recombination velocity of these devices, with the simultaneous measurement of the bulk thermal diffusivity. A trade-off between detectivity/gain and frequency-response bandwidth was found via the lifetime dependence on the wafer background temperature rise induced by Joule-heating due to the applied bias. This effect was most serious with the bulk-Si device, but was limited by the high resistivity of the LPCVD thin-film devices. In the case of the bulk-Si device, the results of photothermal radiometry were compared with, and corroborated by, frequency-scanned photocurrent measurements. More sophisticated analysis was shown to be required for the interpretation of the polysilicon photoconductor frequency-responses, perhaps involving the fractal nature of carrier transport in these grain-structured devices. © 1996 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8032-8038 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman and electrical characterization measurements are performed in order to study the effects of thermal annealing on phosphorus implanted silicon wafers. The silicon layers were implanted for various implantation energies and doses, below, and over the critical dose of amorphization. The post-implanted period was followed by thermal isochronal annealing at various temperatures. Special attention has been given to the amorphous/crystal transition occurring at various annealing temperatures. A bi layer model [R. Loudon, J. Phys. (Paris) 26, 677 (1965)] has been used for a quantitative determination of the annealing temperature at which a complete annihilation of implantation defects takes place. For this analysis, Raman spectra, resistivity depth profiles, as well as 1D-SUPREM III simulation were used.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4340-4342 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization-versus-temperature (M-vs-T) measurements in a fixed field on cubic pseudobinary Tb0.3Y0.7Ag show that M for increasing and then decreasing T bifurcates at the antiferromagnetic Néel point (TN=36 K), where M is maximum. The resulting thermoremanence (MR), which decays very slowly with time, diminishes with increasing T and vanishes at TN. Thus, the long-range antiferromagnetism appears to coexist with spin-glass ordering. Measurements of MR with increasing T were also made for different cooling fields (Hc1) The changes of MR with Hcl and T are found to reduce to a universal relationship between the temperature-normalized quantities, m=MR/M0(T) and h=Hcl /H0(T). Setting both the initial slope of m vs h and the saturation m at high h equal to unity, we determine that M0(T)=M0(0) exp (−T/T0), with M0(0)=0.82μB/Tb atom and T0=4.3 K, and that H0(T) varies analogously, with H0(0)=225 kOe and the same T0. A similar temperature scaling of MR vs Hcl , with similar exponential forms for M0(T) and H0(T), has been deduced earlier for Ag-Mn and other canonical spin glasses.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1578-1580 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic transport properties of very thin undoped GaInP/GaAs quantum wells have been measured by temperature dependent low field Hall effect and by Shubnikov–de Haas effect. Strong Shubnikov–de Haas oscillations were observed after increasing the electron concentration via the persistent photocurrent effect. Low temperature mobilities of up to 70 000 cm2/V s at carrier concentrations of 6.5×1011 cm−2 were observed in a 20 A(ring) quantum well. The results are compared with the theory of interface roughness scattering which indicates extremely smooth interfaces; however, discrepancies between experiment and theory are observed.
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