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  • 1
    Electronic Resource
    Electronic Resource
    Effect of Fe doping on the magnetotransport properties in Nd0.67Sr0.33MnO3 manganese oxides (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 789-793 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed magnetic and transport measurements on a series of Nd0.67Sr0.33Mn1−xFexO3 polycrystalline compounds with x=0.0, 0.05, 0.10, and 0.15. For the Fe-undoped Nd0.67Sr0.33MnO3 (NSMO) materials, a magnetoresistance (MR) as high as ∼33% was observed at the metal–insulator transition temperature, Tp=273 K, in a magnetic field of 10 kOe. Fe substitution in Mn sites leads to a reduction in Tp and an increase in the overall MR. A 10% Fe contribution increases the MR up to about 65% and lowers Tp to 88 K. The calculated magnetic moment at 5 K and an applied field at 9 T for the parent NSMO is 4.21 μB and decreases continuously with an increasing amount of iron added. It was found that with the same amount of Fe doping, the Curie temperature, TC, decreases much faster in the Nd-based system than in the corresponding La-based system. The enhanced colossal magnetoresistance and the suppression of ferromagnetism observed in this compound can be interpreted as due to the weakening of the double exchange mechanism by Fe3+ ions, which causes the localization of the hopping electrons. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421044
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  • 2
    Electronic Resource
    Electronic Resource
    Low threshold 1.2 μm InGaAs quantum well lasers grown under low As/III ratio (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2445-2447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved 160 A/cm2 threshold current density of a 1.21 μm InGaAs/GaAs quantum well (QW) laser grown under a very low As/III ratio. We investigated the As/III ratio dependence on the optical quality of InGaAs QWs grown with arsine and tertiarybutylarsine (TBA). We found that TBA allows us to grow high quality InGaAs QWs under a very low As/III ratio (∼3), while a higher As/III ratio (∼10) with arsine is necessary to obtain the similar quality QWs. This high quality InGaAs QW grown under the low As/III ratio leads to the realization of high quality InGaAsN QW which should be grown under a low As/III ratio and a high N/V ratio. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467697
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  • 3
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 562-564 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon "nanowires" can be formed by chemical vapor deposition of Si onto Si substrates on which nanometer-scale, Ti-containing islands have been grown. At the growth temperatures used, the Ti-containing islands remain solid and anchored to the substrate, while the Si nanowires grow out from the islands, which remain at their bases. The nanowire growth mechanism, therefore, differs from the usual vapor-liquid-solid process and provides a potential route for the formation of oriented Si nanostructures or semiconductor-metal-semiconductor structures compatible with Si integrated circuits. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125852
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  • 4
    Electronic Resource
    Electronic Resource
    Minimum thickness MgO buffer layers for YBa2Cu3O7−x/GaAs structures: Assessment using photoluminescence of multiple-quantum-well structures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 987-989 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaAs-AlGaAs multiple-quantum-well structure was used as a substrate for overgrowth by a MgO buffer layer and superconducting YBa2Cu3O7−X thin film. The multiple quantum well serves as an in-depth probe for possible damage incurred by the semiconductor substrate due to the relatively high temperature and active oxygen environment that characterizes the superconductor growth. The thickness of the MgO buffer layer was varied and correlated with both the superconducting properties of the overlying YBa2Cu3O7−X and the quality of the substrate as determined by photoluminescence measurements of the multiple quantum wells. Both high quality superconducting YBa2Cu3O7−X and excellent photoluminescence spectra of the substrate were obtained with a MgO thickness of 450 A(ring) and quantum wells as close as 350 A(ring) to the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109841
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  • 5
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    The effect of seed electrons on the repeatability of atmospheric pressure plasma plume propagation: I. Experiment (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-10-01
    Description: One of the significant differences between the traditional streamers and the plasma jets is the repeatability of their propagation. In this paper, the effect of the seed electron density on the repeatability of the plasma jets is investigated. The seed electron density plays an essential role in the propagation of plasma plume which is in either repeatable mode or random mode depending on the frequency of the applied voltage and the mixture percentage of the working gas. By measuring the propagation velocities and the ignition delay time, it is found that the propagation velocities of the plasma plume are independent of the seed electron density. However, the jitter of the ignition delay time strongly depends on the frequency of the applied voltage and the mixture percentage of the working gas. After detailed analyzing of the experiment results, it is concluded that the minimum seed electron density required for the plasma bullet to propagate in repeatable mode is on the order of 10 8 cm −3 for gas pressure of 2 × 10 4 Pa. The minimum required seed electron density for the gas pressure of 4 × 10 3 Pa is on the order of 10 7 cm −3 . Further analysis shows that, at one atmospheric pressure, the required minimum seed electron density for repeatable mode is on the order of 10 9 cm −3 .
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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