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Low threshold 1.2 μm InGaAs quantum well lasers grown under low As/III ratio (2002)

Takeuchi, T. ; Chang, Y.-L. ; Tandon, A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 80 (2002), S. 2445-2447

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have achieved 160 A/cm2 threshold current density of a 1.21 μm InGaAs/GaAs quantum well (QW) laser grown under a very low As/III ratio. We investigated the As/III ratio dependence on the optical quality of InGaAs QWs grown with arsine and tertiarybutylarsine (TBA). We found that TBA allows us to grow high quality InGaAs QWs under a very low As/III ratio (∼3), while a higher As/III ratio (∼10) with arsine is necessary to obtain the similar quality QWs. This high quality InGaAs QW grown under the low As/III ratio leads to the realization of high quality InGaAsN QW which should be grown under a low As/III ratio and a high N/V ratio. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1467697

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