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  • American Institute of Physics (AIP)  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2782-2785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A switching device, with a p-type delta-doped sheet in the center of an InGaAs-GaAs quantum well, has been fabricated and demonstrated. An N-shaped negative-differential-resistance phenomenon resulting from the resonant-tunneling effect through the miniband is observed in the current-voltage measurement. From the experimental results, it is seen that the temperature plays an important role in device operation. The influences of temperature upon the peak-current voltage, valley-current voltage, peak-current density, and valley-current density are studied and discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358748
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  • 2
    Electronic Resource
    Electronic Resource
    Application of an AlGaAs/GaAs/InGaAs heterostructure emitter for a resonant-tunneling transistor (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2668-2670 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An AlGaAs/GaAs/InGaAs resonant-tunneling heterostructure-emitter bipolar transistor with negative-differential-resistance (NDR) behavior has been fabricated and demonstrated. Typical device performances with current gain of 140 incorporating an N-shaped NDR with a peak-to-valley current ratio of 5.3 are obtained at room temperature. The NDR behavior is believed to mainly result from a double-barrier-like resonant-tunneling effect. In other words, the on and off electron resonant tunneling from a depleted GaAs emitter through an InGaAs quantum well and ultrathin base toward a collector layer yield the interesting NDR behavior. Consequently, the proposed device provides a good potential for applications in amplifiers, low-power consumption, and logic currents. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125113
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of the anomalous current–voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 404-406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaAs/n+-In0.2Ga0.8As/GaAs doped-channel field-effect transistor structure has been fabricated and studied. A typical transistor performance with a threshold voltage of about −3.0 V and transconductance of up to 160 mS/mm is obtained in the lower gate-source voltage (VGS 〈−1.0 V) regime. However, for some devices, the three-terminal-controlled N-shaped negative-differential-resistance (NDR) behavior is observed at the saturation regime of current–voltage characteristics under higher gate-source bias (VGS≥−1.0 V) condition. The interesting NDR phenomenon is believed to be attributed to the real-space transfer and deep-level electron trapping effect. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114643
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  • 4
    Electronic Resource
    Electronic Resource
    High-performance camel-gate field effect transistor using high-medium-low doped structure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2636-2638 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an improved camel-gate field effect transistor using a high-medium-low doped channel. A 1000-A(ring)-thick n=1×1017 cm−3 GaAs layer is employed to form the camel gate, which prevents the planar-doped barrier from being dropped abruptly. In addition to transition channel, a thin (200 A(ring)) heavily doped (n=5×1017 cm−3) GaAs layer works as the main active channel to enhance the current drivability and transconductance. For our 1.5×100 μm2 device, the maximum current density of over 850 mA/mm was obtained. Moreover, an enhanced voltage-independent transconductance was also observed. Generally, the device exhibits a transconductance of 220 mS/mm which is compatible to that of MESFETs and is two- or threefold to that of reported camel-gate FETs. In addition, the proposed device demonstrates a large gate voltage swing for high transconductance operation. Due to the excellent device performance, our devices do hold promise for both large signal and digital circuits application, simultaneously. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114320
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  • 5
    Electronic Resource
    Electronic Resource
    Performance enhancement in a metal-insulator-semiconductor–like pseudomorphic transistor by utilizing an n−-GaAs/n+-In0.2Ga0.8As two-layer structure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1524-1526 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high performance metal-insulator-semiconductor–like pseudomorphic field-effect transistor utilizing an n−-GaAs/n+-In0.2Ga0.8As two-layer structure was fabricated and demonstrated. The n−-GaAs layer is used as the Schottky contact layer whereas the n+-In0.2Ga0.8As quantum well is employed as the active channel. Due to the excellent properties of the InGaAs layer and carrier confinement effect at the In0.2Ga0.8As–GaAs heterointerface, the device under study shows the advantages of high breakdown voltage, high current capability, very large gate voltage swing for high transconductance operation, and ease of fabrication. For a 2×100 μm2 gate device, a breakdown voltage of 17.4 V, a maximum drain saturation current of 930 mA/mm, a maximum extrinsic transconductance of 230 mS/mm, and a very wide gate voltage range larger than 3 V with the extrinsic transconductance higher than 200 mS/mm are obtained. Therefore, the device has great potential for use in high speed, high power, and large input signal circuit applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113634
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