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  • 1
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    The demonstration of colossal magneto-capacitance effect with the promising gate stack characteristics on Ge (100) by the magnetic gate stack design (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-07-03
    Description: The tetragonal-phase BaTiO 3 as the high dielectric (HK) layer and the magnetic FePt film as the metal gate (MG) are proposed to be the gate stack scheme on the Ge (100) substrate. The ∼75% dielectric constant ( κ -value) improvement, ∼100X gate leakage ( Jg) reduction, and the promising Jg -equivalent-oxide-thickness ( EOT ) gate stack characteristics are achieved in this work with the colossal magneto-capacitance effect. The perpendicular magnetic field from the magnetic FePt MG film couples and triggers the more dipoles in the BaTiO 3 HK layer and then results in the super gate capacitance ( C gate ) and κ -value. Super Jg-EOT gate stack characteristics with the magnetic gate stack design on the high mobility (Ge) substrate demonstrated in this work provides the useful solution for the future low power mobile device design.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-09-03
    Description: In this work, the tetragonal-phase BaTiO 3 high dielectric (HK) layer and the magnetic FePt metal gate (MG) film are proposed to be the gate stack scheme on the Ge three dimensional (3D) n-type multi-gate-field-effect transistors (FETs). The ∼75% dielectric constant (κ-value) improvement, ∼100× gate leakage (J g ) reduction, and ∼70% on-state current (I on ) enhancement are achieved due to the colossal magneto-capacitance effect. The magnetic field from the magnetic FePt MG film couples and triggers more dipoles in the BaTiO 3 HK layer and then results in the super gate stack characteristics. The promising transistor's performance (∼200  μ A/ μ m on the device with the gate length L ch  = 60 nm) on the high mobility (Ge) material in the 3D n-type multi-gate-FETs device structure demonstrated in this work provides the useful solution for the future advanced logic device design.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
    Electronic Resource
    Electronic Resource
    Zeeman studies of the first excited states of palladium and metal free phthalocyanines in Shpol'skii matrix (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 8210-8215 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Phthalocyanines (Pcs) are planar molecules of relatively high symmetry and exhibit magneto-optic effects in many ways. We report the Zeeman effect of the first excited states of palladium (Pd–) and free-base (H2–) Pcs in a 5 K Shpol'skii matrix by direct observation of their fluorescence position shifts. From the experimental data an apparent angular momentum integral, coupling the lowest two Jahn–Teller stabilized crystal field split first excited states, Λ′, was found to be 2.7±0.1 (h-dash-bar) for PdPc. No conclusive Λ′ was deduced for H2Pc but its value can be estimated to be around the theoretical value of 3 (h-dash-bar). The experimental data of H2Pc revealed a complex structure in the fluorescence band examined, which complicated the analysis of Λ′ but helped unravel the biexponential decay problem of the structure. We infer one narrower band in the structure has the previously reported lifetime of τ 6.3 ns, and the other broader band being ∼1.8 cm−1 higher, has τ 3.7 ns. We believe this composite situation also exists for the other tautomeric structure since it also exhibited biexponential decay. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.471574
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  • 4
    Electronic Resource
    Electronic Resource
    An optimal quasisuperlattice design to further improve thermal stability of tantalum nitride diffusion barriers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2895-2897 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction and transmission electron microscopy, along with electrical and film stress measurements, were used to evaluate the effectiveness of 40-nm-thick amorphous Ta2N and microcrystalline TaN diffusion barriers, both single and multilayered, against Cu penetration. Failure of the single-layered Ta2N diffusion barrier upon annealing is initialized by crystallization/grain growth, mainly helped by frozen-in compressive stress (3–4 GPa) to transform itself into a columnar structure with a comparable grain size to the thickness of the barrier. However, when subjected to annealing, the Ta2N/TaN alternately layered diffusion barrier with an optimum bilayer thickness (10 nm) remains almost stress-free (0–0.7 GPa) and transforms itself into an equiaxed structure with grain sizes of only ≤3 nm. Such quasisuperlattice films can present lengthening and complex grained structures to effectively block Cu diffusion, thus acting as much more effective barriers than Ta2N (and TaN) single-layered films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126509
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  • 5
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    An instrument for measuring scintillators efficiently based on silicon photomultipliers (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-11-30
    Description: An instrument used for measuring multiple scintillators’ light output and energy resolution was developed. The instrument consisted of a light sensor array which was composed of 64 discrete SiPMs (Silicon Photomultipliers), a corresponding individual channel readout electronics system, and a data processing algorithm. A Teflon grid and a large interval between adjacent SiPMs were employed to eliminate the optical cross talk among scintillators. The scintillators’ light output was obtained by comparing with a reference sample with known light output. Given the SiPM temperature dependency and the difference among each SiPM, a temperature offset correction algorithm and a non-uniformity correction algorithm were added to the instrument. A positioning algorithm, based on nine points, was designed to evaluate the performance of a scintillator array. Tests were performed to evaluate the instrument’s performance. The uniformity of 64 channels for light output measurement was better than 98%, the stability was better than 98% when temperature varied from 15 °C to 40 °C, and the nonlinearity under 511 keV was better than 2%. This instrument was capable of selecting scintillators and evaluating the packaging technology of scintillator arrays with high efficiency and accuracy.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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