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  • American Institute of Physics (AIP)  (10)
  • 1
    Electronic Resource
    Electronic Resource
    New hybrid physical vapor deposition/organometallic chemical vapor deposition route to high Tc superconducting Tl-Ba-Ca-Cu-O thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2778-2780 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High Tc superconducting Tl-Ba-Ca-Cu-O thin films have been prepared by a novel hybrid technique that combines electron beam evaporation with organometallic chemical vapor deposition (OMCVD). Multilayer thin films of Ba-Ca-Cu-O are prepared by sequential evaporation of BaF2, CaF2, and Cu sources onto single-crystal MgO (100) or yttria-stabilized zirconia substrates followed by annealing in a water vapor-saturated oxygen atmosphere. Thallium is then incorporated in these films in either of two ways: (1) OMCVD using thallium(cyclopentadienide) as the source or (2) vapor diffusion using bulk Tl-Ba-Ca-Cu-O superconductor as the source. The resultant films are single phase, consisting predominantly of Tl1Ba2Ca2Cu3Ox with crystallite Cu-O planes preferentially oriented parallel to the substrate surface. Resistivity measurements indicate superconducting onset temperatures above 120 K with zero resistance by 104 K. By eliminating the water vapor in the initial anneal, fluoride (originating from the Ba and Ca sources) may be retained in the film. Upon T1 incorporation, this promotes formation of the Tl1Ba2Ca1Cu2Ox phase with preferential crystallite c-axis orientation perpendicular to the substrate surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102372
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  • 2
    Electronic Resource
    Electronic Resource
    Organometallic chemical vapor deposition of superconducting, high Tc Pb-doped Bi-Sr-Ca-Cu-O thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1906-1908 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented films of the high Tc Bi-Pb-Sr-Ca-Cu-O (BPSCCO)superconductor have been prepared by two organometallic chemical vapor deposition (OMCVD) approaches. In the first approach, Pb is introduced by alternate deposition of BSCCO and PbOx films using the volatile metalorganic precursors Cu(acetylacetonate)2, Sr(dipivaloylmethanate)2, Ca(dipivaloylmethanate)2, triphenyl bismuth, and tetraphenyl lead. In the second approach, Pb is incorporated into an OMCVD-derived BSCCO film by vapor diffusion using PbO as the source. X-ray diffractometry and scanning electron microscopy reveal that Pb doping significantly improves the crystalline orientation and the film morphology. Films deposited by both methods on [100] single-crystal MgO consist predominantly of the Bi2(Sr,Ca)3Cu2Ox phase and have a high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼110 K and zero resistance by 80 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102330
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  • 3
    Electronic Resource
    Electronic Resource
    Metal-organic chemical vapor deposition/open flow thallium annealing route to epitaxial Tl2Ba2Ca2Cu3O10 thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 231-233 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase-pure epitaxial Tl2Ba2Ca2Cu3O10 thin films have been grown on single crystal (110) LaAlO3 substrates using an improved metal-organic chemical vapor deposition process. First, Ba-Ca-Cu-Ox precursor films are grown on LaAlO3 (110) substrates using Ba(hfa)2⋅tet, Ca(hfa)2⋅tet, and Cu(hfa)2 (hfa=hexafluoroacetylacetonate; tet=tetraglyme) as volatile metalorganic precursors. Thallium is then incorporated into the films during a post-anneal in the presence of a Tl2O3, BaO, CaO, CuO powder mixture at 820 °C for 12 h in a flowing 10% O2/Ar atmosphere. The films have a transport-measured Tc=115 K and Jc=1.5×105 A/cm2 (80 K), while magnetic hysteresis measurements yield Jc=6×105 A/cm2 (77 K). Preliminary surface resistance measurements give Rs=0.35 mΩ at 5 K, 10 GHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112638
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  • 4
    Electronic Resource
    Electronic Resource
    Solid phase epitaxy of Bi2Sr2CaCu2Ox superconducting thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4080-4082 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial superconducting Bi2Sr2CaCu2Ox (BSCCO) thin films have been formed by solid phase epitaxy from amorphous films deposited by metallorganic chemical vapor deposition. (100) MgO and LaAlO3 single crystals were used as the substrates. After high-temperature annealing in flowing oxygen, the films consist predominantly of the BSCCO (2212) phase and are epitaxial to the LaAlO3 with the c axis perpendicular to the substrate surface. The epitaxial structure of the films is confirmed by x-ray diffraction measurements including θ/2θ and in-plane Φ scans as well as by cross-sectional high-resolution transmission electron microscopy. Four-probe resistivity measurements show that the critical temperature of the film on LaAlO3 is 78 K. The critical current density of the epitaxial layer was one order of magnitude greater than that of textured films on MgO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352834
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  • 5
    Electronic Resource
    Electronic Resource
    A new route to high-Tc superconducting Bi–Sr–Ca–Cu–O thin films: Improved deposition efficiency and film morphology using ammonia–argon mixtures as the carrier gas (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2769-2771 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented films of the high-Tc superconductor Bi2Sr2CaCu2Ox have been prepared by a low-pressure organometallic chemical vapor deposition process using a mixture of ammonia and argon as the carrier gas together with Sr(dpm)2 (dpm-dipivaloylmethanate), Ca(dpm)2, Cu(acac)2 (acac-acetylacetonate), and triphenylbismuth as the organometallic precursors. By introducing ammonia into the carrier gas, a significant improvement in the volatility and thermal stability of both Sr(dpm)2 and Ca(dpm)2 is observed. Typical required source temperatures for Sr(dpm)2 and Ca(dpm)2 with the introduction of ammonia are about 40–50 °C lower than the source temperatures of the precursors without the introduction of ammonia. Enhancement of source volatility for Cu(acac)2 is also observed. After annealing at 865 °C in flowing oxygen, the films consist predominantly of the Bi2Sr2CaCu2Ox phase and exhibit high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼110 K and zero resistivity achieved at 74 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351052
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  • 6
    Electronic Resource
    Electronic Resource
    Preparation of high-Tc superconducting Bi-Sr-Ca-Cu-O films by organometallic chemical vapor deposition using second-generation fluorocarbon-based precursors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2743-2745 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-Tc superconducting Bi-Sr-Ca-Cu-O thin films with good electrical properties and smooth surface morphologies have been prepared by low-pressure organometallic chemical vapor deposition using the new fluorocarbon-based precursors Sr(hexafluoroacetylacetonate)2⋅tetraglyme and Ca(hexafluoroacetylacetonate)2⋅triglyme together with Cu(acetylacetonate)2 and triphenylbismuth [Bi(C6H5)3]. The fluorinated precursors are air-stable and exhibit high, stable volatility even after prolonged heating. X-ray diffraction measurements reveal that the films deposited at 650 °C contain some fluoride phases but no high-Tc phases. However, post-annealing in oxygen produces films composed predominantly of the Bi2Sr2CaCu2Ox phase with high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼100 K and zero resistivity achieved at 73 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348631
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  • 7
    Electronic Resource
    Electronic Resource
    Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2342-2344 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42 000 S/cm with mobility of 609 cm2/V s is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1365410
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical transport properties of epitaxial BaTiO3 thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 969-977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the temperature dependent transport properties of epitaxial BaTiO3 are reported. Electrical resistivity and thermoelectric power were measured over the temperature range of 77–300 K. Room temperature resistivities of the as-deposited, undoped films range from 105 to 108 Ω cm, while values as low as 55 Ω cm are obtained for the La-doped films. The resistivity shows an activated temperature dependence with the measured activation energies ranging between 0.11 and 0.50 eV. The activation energy depends strongly upon the thin film carrier concentration. Thermoelectric power measurements indicate that the films are n-type. The Seebeck coefficient for La-doped BaTiO3 exhibits metallike behavior, with its magnitude directly proportional to temperature. Temperature dependent resistivity and thermopower measurements indicate that the carrier mobility is activated. A transport model is proposed whereby conduction occurs in the La-doped films via hopping between localized states within a pseudogap formed between a lower Hubbard band and the BaTiO3 conduction band edge. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362909
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  • 9
    Electronic Resource
    Electronic Resource
    Efficient route to TlBa2Ca2Cu3O9+x thin films by metal-organic chemical vapor deposition using TlF as a thallination source (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1243-1245 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin TlBa2Ca2Cu3O9+x films were grown on single crystal (110) LaAlO3 from metal-organic chemical-vapor deposition-derived Ba–Ca–Cu–Ox precursor films employing Ba(hfa)2⋅mep, Ca(hfa)2⋅tet, and Cu(dpm)2 (hfa=hexafluoroacetylacetonate; dpm=dipivaloylmethanate; tet=tetraglyme; mep=methylethylpentaglyme) as the volatile metal sources. Thallination is then accomplished by annealing the precursor films in the presence of a bulk BaO+CaO+CuO+TlF source at 885 °C in flowing O2. The presence of TlF is essential for nucleating the Tl-1223 phase. The resulting Tl-1223 films are nearly phase-pure, highly oriented, epitaxial by x-ray diffraction, and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit a transport measured Tc=103 K and Jc=4.4×104 A/cm2 (77 K, 0 T). Magnetic hysteresis measurements yield Jc=1.9×105 A/cm2 (30 K, 0.01 T) and show considerable flux pinning at low temperatures with Jc=1.4×105 A/cm2 (5 K, 4.5 T). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119862
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  • 10
    Electronic Resource
    Electronic Resource
    In-plane orientation control of (001)YBa2Cu3O7−δ grown on (001)MgO by pulsed organometallic beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3037-3039 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of (001) YBCO are grown on epitaxially polished (001) MgO by pulsed organometallic beam epitaxy. The in-plane orientation of the film is controlled by the thickness of a BaO layer, grown in situ, prior to the YBCO growth. For thin BaO layers (〈≈7×1014 Ba/cm2) the films grown [110]YBCO(parallel)[100]MgO. For thick BaO layers ((approximately-greater-than)≈11×1014 Ba/cm2) the films grow [100]YBCO(parallel)[100]MgO. A mechanism that relates the change in YBCO in-plane orientation to a change in the structure of the initial BaO layers with BaO thickness is described. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115569
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