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  • 1
    Electronic Resource
    Electronic Resource
    A new integral equation formulation for the analysis of crack-inclusion interactions (1992)
    Springer
    Computational mechanics 10 (1992), S. 217-229 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A new integral equation method for the analysis of the interactions between cracks and elastic inclusions embedded in a two-dimensional, linearly elastic, isotropic infinite medium subjected to in-plane force is presented. By distributing dislocations along the crack lines and forces along the matrix-inclusion interfaces, a set of coupled integral equations is obtained. The discretization procedure of the integrals involved is discussed and the relations between the stress intensity factors and the values of the dislocation functions at the respective crack tips are derived. Several sample problems are presented in order to determine the versatility and the accuracy of this approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00370090
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of Young's moduli of micromechanical thin films using the resonance method
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 35 (1992), S. 153-159 
    Details
    ISSN: 0924-4247
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0924-4247(92)80154-U
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  • 3
    Electronic Resource
    Electronic Resource
    Organometallic chemical vapor deposition of superconducting, high Tc Pb-doped Bi-Sr-Ca-Cu-O thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1906-1908 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented films of the high Tc Bi-Pb-Sr-Ca-Cu-O (BPSCCO)superconductor have been prepared by two organometallic chemical vapor deposition (OMCVD) approaches. In the first approach, Pb is introduced by alternate deposition of BSCCO and PbOx films using the volatile metalorganic precursors Cu(acetylacetonate)2, Sr(dipivaloylmethanate)2, Ca(dipivaloylmethanate)2, triphenyl bismuth, and tetraphenyl lead. In the second approach, Pb is incorporated into an OMCVD-derived BSCCO film by vapor diffusion using PbO as the source. X-ray diffractometry and scanning electron microscopy reveal that Pb doping significantly improves the crystalline orientation and the film morphology. Films deposited by both methods on [100] single-crystal MgO consist predominantly of the Bi2(Sr,Ca)3Cu2Ox phase and have a high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼110 K and zero resistance by 80 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102330
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  • 4
    Electronic Resource
    Electronic Resource
    Harmonic mixing at mm waveband in a high temperature superconducting grain boundary Josephson junction (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2286-2288 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a high Tc superconducting grain boundary Josephson junction, harmonic mixing experiments in the mm waveband were carried out, aiming at as large a harmonic number and as high a signal frequency as possible. The dependencies of intermediate frequency output on dc bias, harmonic number, frequency of local oscillator (LO), and other parameters were carefully studied. Until now, our best result was the mixing between the signal at 95 GHz and the 105th harmonic of LO at about 900 MHz. Preliminary experiments using a high Tc harmonic mixer and phase-locking loop were tried to stabilize the frequency of a mm wave source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356293
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  • 5
    Electronic Resource
    Electronic Resource
    A new route to high-Tc superconducting Bi–Sr–Ca–Cu–O thin films: Improved deposition efficiency and film morphology using ammonia–argon mixtures as the carrier gas (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2769-2771 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented films of the high-Tc superconductor Bi2Sr2CaCu2Ox have been prepared by a low-pressure organometallic chemical vapor deposition process using a mixture of ammonia and argon as the carrier gas together with Sr(dpm)2 (dpm-dipivaloylmethanate), Ca(dpm)2, Cu(acac)2 (acac-acetylacetonate), and triphenylbismuth as the organometallic precursors. By introducing ammonia into the carrier gas, a significant improvement in the volatility and thermal stability of both Sr(dpm)2 and Ca(dpm)2 is observed. Typical required source temperatures for Sr(dpm)2 and Ca(dpm)2 with the introduction of ammonia are about 40–50 °C lower than the source temperatures of the precursors without the introduction of ammonia. Enhancement of source volatility for Cu(acac)2 is also observed. After annealing at 865 °C in flowing oxygen, the films consist predominantly of the Bi2Sr2CaCu2Ox phase and exhibit high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼110 K and zero resistivity achieved at 74 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351052
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  • 6
    Electronic Resource
    Electronic Resource
    Preparation of high-Tc superconducting Bi-Sr-Ca-Cu-O films by organometallic chemical vapor deposition using second-generation fluorocarbon-based precursors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2743-2745 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-Tc superconducting Bi-Sr-Ca-Cu-O thin films with good electrical properties and smooth surface morphologies have been prepared by low-pressure organometallic chemical vapor deposition using the new fluorocarbon-based precursors Sr(hexafluoroacetylacetonate)2⋅tetraglyme and Ca(hexafluoroacetylacetonate)2⋅triglyme together with Cu(acetylacetonate)2 and triphenylbismuth [Bi(C6H5)3]. The fluorinated precursors are air-stable and exhibit high, stable volatility even after prolonged heating. X-ray diffraction measurements reveal that the films deposited at 650 °C contain some fluoride phases but no high-Tc phases. However, post-annealing in oxygen produces films composed predominantly of the Bi2Sr2CaCu2Ox phase with high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼100 K and zero resistivity achieved at 73 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348631
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  • 7
    Electronic Resource
    Electronic Resource
    Noise suppression in Ti:sapphire laser-based electro-optic sampling (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3446-3448 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that intensity and phase noise are highly correlated in a mode-locked Ti:sapphire laser. This allows electro-optic sampling noise, degraded by the combination of −184 dBc/Hz laser phase noise and birefringent system components, to be reduced 12 dB to the shot noise floor. Two multiorder waveplates can be combined to achieve shot-limited noise while preserving maximum detection efficiency. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125291
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  • 8
    Electronic Resource
    Electronic Resource
    Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold current (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 8-14 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A specially designed quantum well laser for achieving extremely low vertical beam divergence was reported and theoretically investigated. The laser structure was characterized by two low index layers inserted between the waveguide layers and the cladding layers. The additional layers were intended to achieve wide optical spread in the cladding layers and strong confinement in the active region. This enabled significant reduction of beam divergence with no sacrifice in threshold current density. The numerical results showed that lasers with extremely low vertical beam divergence from 20° down to 11° and threshold current density of less than 131 A/cm2 can be easily achieved by optimization of the structure parameters. Influences of individual key structure parameters on beam divergence and threshold current density are analyzed. Attention is also paid to the minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal loss. The near and far field patterns are given and discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366727
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  • 9
    Electronic Resource
    Electronic Resource
    Formation of oriented high Tc superconducting Bi-Sr-Ca-Cu-O thin films on silver substrates by organometallic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 976-978 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented thin films of the high Tc Bi-Sr-Ca-Cu-O superconductor have been deposited on silver substrates by low-pressure organometallic chemical vapor deposition. The volatile metalorganic complexes Cu(acetylacetonate)2, Sr(dipivaloylmethanate)2, Ca(dipivaloylmethanate)2, and triphenyl bismuth are used as precursors with N2O as a reactant gas. X-ray diffraction measurements reveal that the films deposited at 625 °C contain a mixture of the Bi2(Sr,Ca)2CuOx and Bi2(Sr,Ca)3Cu2Ox phases. The post-annealed films are predominantly composed of the Bi2(Sr,Ca)3Cu2Ox phase with preferential orientation of the crystallite c axes perpendicular to the substrate surface. Magnetic susceptibility measurements indicate the superconducting onset temperature of the annealed films to be at 80 K. The zero-field critical current density, estimated from magnetization measurements, is ∼3.9×105 A/cm2 at 5.5 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102597
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  • 10
    Electronic Resource
    Electronic Resource
    Raman scattering studies on Si-doped GaAs grown by hydrogen-assisted molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1813-1815 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surfactant effect of atomic hydrogen on the incorporation of silicon into (100)-, (111)A-, and (311)A-oriented GaAs grown by hydrogen-assisted molecular beam epitaxy has been studied with Raman spectroscopy. Local vibrational modes (LVMs) of SiGa and SiAs impurities are observed for excitation nearly resonant with the E1 energy gap. Site switch of the doping Si atoms from Ga to As lattice sites due to the surfactant effect of H during growth of the high-index doped layers was directly monitored by changes of the normalized intensity of the LVMs. An increase of the free carrier concentration in p-type samples and a decrease in n-type samples resulting from this site switch were also observed in the plasmon-phonon coupled modes as observed in Raman scattering. Similar changes in carrier concentrations were observed by means of electrical transport measurements. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119407
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