Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 1709-1711
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Templated ZnO thin-film growth from the vapor phase is achieved on docosyltrichloro- silane-patterned Si substrates using atomic layer epitaxy (ALE) combined with soft lithography. Patterned hydrophobic self-assembled monolayers (SAMs) are first transferred to single-crystal Si surfaces by hot microcontact printing. Using diethylzinc and water as ALE precursors, crystalline ZnO layers are then grown selectively on the SAM-free surface regions where native hydroxy groups nucleate growth from the vapor phase. High-resolution ZnO patterns with 1.0–40 μm feature sizes are readily achieved, demonstrating that soft lithography combined with ALE is a simple and promising methodology for selective area in situ vapor phase fabrication of patterned oxide thin films. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1402959
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