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  • 1
    Publication Date: 2015-12-31
    Description: In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 2
    Publication Date: 2016-03-08
    Description: Here, we propose to exploit the low energy bandwidth, small wavelength, and penetration power of ultrashort pulses from XFELs for resonant Small Angle Scattering (SAXS) on plasma structures in laser excited plasmas. Small angle scattering allows to detect nanoscale density fluctuations in forward scattering direction. Typically, the SAXS signal from laser excited plasmas is expected to be dominated by the free electron distribution. We propose that the ionic scattering signal becomes visible when the X-ray energy is in resonance with an electron transition between two bound states (resonant coherent X-ray diffraction). In this case, the scattering cross-section dramatically increases so that the signal of X-ray scattering from ions silhouettes against the free electron scattering background which allows to measure the opacity and derived quantities with high spatial and temporal resolution, being fundamentally limited only by the X-ray wavelength and timing. Deriving quantities such as ion spatial distribution, charge state distribution, and plasma temperature with such high spatial and temporal resolution will make a vast number of processes in shortpulse laser-solid interaction accessible for direct experimental observation, e.g., hole-boring and shock propagation, filamentation and instability dynamics, electron transport, heating, and ultrafast ionization dynamics.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
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  • 3
    Publication Date: 2016-06-16
    Description: The dynamics of bulk heating and ionization is investigated both in simulations and theory, which determines the crucial plasma parameters such as plasma temperature and density in ultra-short relativistic laser-solid target interactions. During laser-plasma interactions, the solid density plasma absorbs a fraction of laser energy and converts it into kinetic energy of electrons. A portion of the electrons with relativistic kinetic energy goes through the solid density plasma and transfers energy into the bulk electrons, which results in bulk electron heating. The bulk electron heating is finally translated into the processes of bulk collisional ionization inside the solid target. A simple model based on the Ohmic heating mechanism indicates that the local and temporal profile of bulk return current is essential to determine the temporal evolution of bulk electron temperature. A series of particle-in-cell simulations showing the local heating model is robust in the cases of target with a preplasma and without a preplasma. Predicting the bulk electron heating is then benefit for understanding the collisional ionization dynamics inside the solid targets. The connection of the heating and ionization inside the solid target is further studied using Thomas-Fermi model.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
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  • 4
    Publication Date: 2016-02-24
    Description: In this paper, an opto-mechanical coupled-ring reflector driven by optical gradient force is applied in an external-cavity tunable laser. A pair of mutually coupled ring resonators with a free-standing arc serves as a movable reflector. It obtains a 13.3-nm wavelength tuning range based on an opto-mechanical lasing-wavelength tuning coefficient of 127 GHz/nm. The potential applications include optical network, on-chip optical trapping, sensing, and biology detection.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 5
    Publication Date: 2015-06-30
    Description: Neutron yields have direct correlation with the energy of incident deuterons in experiments of laser deuterated target interaction [Roth et al. , Phys. Rev. Lett. 110 , 044802 (2013) and Higginson et al. , Phys. Plasmas 18 , 100703 (2011)], while deuterated plasma density is also an important parameter. Experiments at the Shenguang II laser facility have produced neutrons with energy of 2.45 MeV using d (d, n) He reaction. Deuterated foil target and K-shaped target were employed to study the influence of plasma density on neutron yields. Neutron yield generated by K-shaped target (nearly 10 6 ) was two times higher than by foil target because the K-shaped target results in higher density plasma. Interferometry and multi hydro-dynamics simulation confirmed the importance of plasma density for enhancement of neutron yields.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 4138-4155 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Rotational and hyperfine analyses have been carried out for the (0,0) bands of the C 3Π–X 3Δ, e 1Π–X 3Δ, and f 1Φ–a 1Δ transitions of gaseous NbN from laser excitation spectra taken at sub-Doppler resolution. The δπ C 3Π and e 1Π states lie only 102 cm−1 apart in zero order but the spin–orbit matrix element between them, which is the sum of the spin–orbit constants for the δ and π electrons, is 698 cm−1; as a result the 3Π1 spin component lies below both the 3Π0 and 3Π2 components, and its hyperfine structure is highly irregular. This irregularity is an extreme example of how cross terms between the spin–orbit interaction and the Fermi contact hyperfine operator alter the apparent value of the hyperfine a constant, the coefficient of I⋅L in the magnetic hyperfine Hamiltonian. Molecular parameters for the C 3Π and e 1Π states have been obtained from a combined fit to the two of them. Including data for the B 3Φ state recorded earlier [Azuma et al., J. Chem. Phys. 91, 1 (1989)], detailed information is now available for all six of the electronic states from the electron configurations σδ and δπ. It has been verified that the spin–orbit/Fermi contact cross terms cause roughly equal and opposite shifts in the hyperfine a constants for the singlet states and the Σ=0 components of the triplet states. After allowing for this effect, it has been possible to interpret the hyperfine a constants in terms of one-electron parameters for the δ and π electrons, in similar fashion to spin–orbit parameters. Wavelength resolved fluorescence, following selective laser excitation of the C 3Π, e 1Π, and f 1Φ states, has led to the discovery of three new electronic states, δ2 c 1Γ, δ2 A 3Σ−, and σ2 b 1Σ+, besides giving the absolute position of a 1Δ. Strong configuration interaction mixing is found to occur between the σ2 b 1Σ+ and δ2 d 1Σ+ states. The low-lying electronic states of NbN are now well understood.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 7300-7310 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: High-resolution intracavity dye laser spectroscopy has been used to obtain sub-Doppler spectra of transitions to 350 rotational levels in the 410 band of the A˜ 1A2–X˜ 1A1 electronic transition of thioformaldehyde. Ground state combination differences from the sub-Doppler spectra, combined with microwave and infrared data, have been used to improve the ground state rotational and centrifugal distortion constants of H2CS. The upper state shows a remarkable number of perturbations. The largest of these are caused by nearby triplet levels, with matrix elements of 0.05–0.15 cm−1. A particularly clear singlet–triplet avoided crossing in Ka' = 7 has been shown to be caused by interaction with the F1 component of the 3162 vibrational level of the a˜ 3A2 state. At least 53% of the S1 levels show evidence of very small perturbations by high rovibronic levels of the ground state. The number of such perturbations is small at low J, but increases rapidly beyond J=5 such that 40%–80% of the observed S1 levels of any given J are perturbed by ground state levels. Model calculations show that the density and J dependence of the number of perturbed levels can be explained if there is extensive rotation-induced mixing of the vibrational levels in the ground state.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3143-3149 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transmission electron microscopy study of oxidation kinetics of C54-TiSi2 for both dry and wet oxidation has been carried out. Precautions were taken to determine the activation energies of oxidation in the temperature and time regime where the islanding of TiSi2 did not occur. For dry oxidation, activation energies for parabolic and linear growth were found to be 1.97 and 2.50 eV (with an error bar of ±0.1 eV), respectively. On the other hand, activation energies for parabolic and linear growth were found to be 1.88 and 2.10 eV (with an error bar of ±0.1 eV), respectively, for wet oxidation. The activation energy of parabolic rate constant is seen to be substantially different from those obtained previously. The difference is attributed to the occurrence and absence of islanding during oxidation in the previous and present study, correspondingly. The closeness of linear activation energy of TiSi2 oxidation with that of pure silicon is thought to be due to the fact that both are related to the breaking of the Si—Si bonds at the silicon surface. Orthorhombic TiO2 was observed to form on the surface of all samples wet oxidized at 880–1040 °C for 5–70 min. For dry oxidized samples, no TiO2 was detected in samples dry oxidized at 880–940 °C for 5–50 min and at 920 °C for up to 6 h. However, in samples dry oxidized at 920 °C for 10–15 h, TiO2 was found to form. For dry oxidation, it is thought that although the formation energy of TiO2 is considerably higher than that of SiO2, the nucleation barrier for forming TiO2 is higher. Only after prolonged oxidation was the nucleation barrier overcome and led to the formation of TiO2.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 202-206 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface states of sol-gel derived PbTiO3 thin films on Si substrates before and after Ar+ sputtering were studied by x-ray photoelectron spectroscopy (XPS). The results showed that there was no residual carbon or other impurity element in the films except some carbon surface contamination due to specimen handling or pumping oil. A large amount of absorbed oxygen was near the surfaces of the films. The chemical composition of the films was found to be stoichiometric, as proved by inductively coupled plasma results. The valence states of the ions indicated that the films were PbTiO3 with perovskite structure. The XPS spectra of the films after Ar+ sputtering for 10 min differed greatly from those of as-prepared films. This probably results from the preferred sputtering of lead atoms and the production of many new dangling bonds during Ar+ bombardment. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4921-4923 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The unipolar Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition at 550 °C is demonstrated. The dark current density measured at 77 K is (2.5±0.1)×10−7 A/cm2 for the barrier height of 176±8 meV, at a reverse bias of 1 V. The barrier heights are measured from the activation analysis of the saturation current and compared to the theoretical values. The barrier height decreases as the thickness of the SiGe strained layer exceeds the critical thickness.
    Type of Medium: Electronic Resource
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