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  • 1
    Electronic Resource
    Electronic Resource
    Effects of dry etching damage removal on low-temperature silicon selective epitaxial growth (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4710-4714 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial silicon layer selectively grown on the reactive ion etched (RIE) silicon substrate using CF4, CHF3 and Ar etching gases has been studied. Defects and contaminants induced by the RIE process result in a rough epilayer, and degrade the current–voltage (I–V) characteristics. An interfacial carbide layer is present between the epilayer and the RIE treated substrate. Using an efficient and convenient after-etching treatment with a CF4/O2 low-energy plasma, we obtain a clean Si surface in the patterned oxide windows for selective epitaxial growth, and the electrical characteristics are significantly improved. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359818
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of the Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4921-4923 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The unipolar Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition at 550 °C is demonstrated. The dark current density measured at 77 K is (2.5±0.1)×10−7 A/cm2 for the barrier height of 176±8 meV, at a reverse bias of 1 V. The barrier heights are measured from the activation analysis of the saturation current and compared to the theoretical values. The barrier height decreases as the thickness of the SiGe strained layer exceeds the critical thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357206
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  • 3
    Electronic Resource
    Electronic Resource
    Investigation of zinc incorporation in GaAs epilayers grown by low-pressure metalorganic chemical-vapor deposition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1860-1863 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-pressure metalorganic chemical-vapor deposition was adopted to grow p-type GaAs epilayers. Triethylgallium and arsine (AsH3) are used as Ga and As sources, respectively. Diethylzinc (DEZn) is used as a p-type dopant. The hole-carrier concentration and zinc incorporation efficiency are studied by Hall measurements and 16-K photoluminescence spectral. The influence of growth parameters, such as the DEZn mole fraction, growth temperature, and AsH3 mole fraction, on the zinc incorporation and the epilayer growth rate are discussed. The hole-carrier concentration increases with increasing DEZn and AsH3 mole fractions and decreases with increasing growth temperature. A vacancy control model can be adopted to explain the above results consistently. The growth rate of the epilayer is enhanced by zinc incorporation and decreases with increasing growth temperature. The decrease in growth rate is presumably due to the decrease in diethylzinc incorporation at higher growth temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338030
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  • 4
    Electronic Resource
    Electronic Resource
    Temperature effects on carbon and zinc incorporations in GaAs grown by low-pressure metalorganic chemical vapor deposition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 442-444 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carbon and zinc incorporations in GaAs grown by low-pressure metalorganic chemical vapor deposition using triethylgallium as the gallium source have been studied. Carbon and zinc incorporations are identified by photoluminescence spectrum and Hall measurement. The carbon incorporation in undoped GaAs decreases as the growth temperature increases and can be explained by the dissociation effect of triethylgallium at high growth temperature. The zinc incorporation in p-type GaAs doped with diethylzinc also decreases with increasing growth temperature. It can be explained by a vacancy control model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338973
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  • 5
    Electronic Resource
    Electronic Resource
    Boron incorporation in Si1−xGex films grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3001-3003 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 0.1% B2H6 diluted in hydrogen is used as the p-type dopant gas in Si1−xGex grown by ultrahigh vacuum chemical vapor deposition (UHVCVD) using Si2H6 and GeH4. The boron concentration is evaluated by secondary ion mass spectrometry (SIMS). The boron concentration of Si1−xGex increases with the increase of the GeH4 flow rate, that is, Ge fraction, by keeping Si2H6 and B2H6 flow rates constant. The result may be due to the increase of the vacant surface sites which is caused by the increase of the hydrogen desorption rate when a higher Ge fraction epilayer is grown. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114932
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  • 6
    Electronic Resource
    Electronic Resource
    Incorporation of Al and Ga in AlGaAs grown by low-pressure triethyl gallium metalorganic vapor-phase epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 609-611 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-pressure metalorganic vapor-phase epitaxy was adopted to grow AlGaAs epitaxial films by using triethyl-gallium, trimethyl-aluminum, and AsH3 as the Ga, Al, and As sources, respectively. Growth rate, incorporation rates, and AlAs solid composition versus growth temperature have been investigated by electron probe microanalysis with the following results: the growth rate, the AlAs fraction in AlGaAs, and the Al and Ga incorporation rates increase with increasing growth temperature under reduced pressure. The Al incorporation rate increases more quickly than that of the Ga in AlGaAs. The above results are consistent with one another.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335620
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  • 7
    Electronic Resource
    Electronic Resource
    Phosphorus doping of Si and Si1−xGex grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1498-1500 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 100 ppm PH3 diluted in hydrogen is used as the n-type dopant gas in Si and Si1−xGex epilayers grown by ultrahigh vacuum chemical vapor deposition (UHVCVD) using Si2H6 and GeH4. The phosphorus concentration in Si increases linearly at a small PH3 flow rate and becomes nearly saturated at higher flow rates, while the phosphorus concentration in Si1−xGex only shows a nearly linear behavior with PH3 flow rate. The growth rates of Si and Si1−xGex epilayers decrease seriously (∼50%) and slightly (∼10%) with the increase of PH3 flow rate, respectively. These results can be explained by a model based on the enhancement of hydrogen desorption rate at smaller PH3 flow rates and different levels of the effects of phosphorus blocking of surface-activated sites between Si and Si1−xGex epilayers at higher PH3 flow rates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115678
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  • 8
    Electronic Resource
    Electronic Resource
    Abruptness of Ge composition at the Si/SiGe interface grown by ultrahigh vacuum chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1092-1094 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is proposed to estimate the interfacial abruptness of the Si/SiGe heterojunction. In this model, a transition region with linearly graded Ge composition is assumed at the Si/SiGe interface. The Ge composition x of Si/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition at 550 °C is found to increase with the deposition time as deposition at the same gas phase composition. This phenomenon can be explained by this model and the fitting results match the measured data. The thickness of the transition region and the transition time can be extracted from these fittings. The transition thicknesses are found to be about 1.9 nm or thinner as grown at 550 °C or below. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114471
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  • 9
    Electronic Resource
    Electronic Resource
    Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 232-234 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality metastable pseudomorphic Si1−xGex epilayers were grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4. These epilayers were implanted with 40 keV B11+ and 100 keV BF+2 ions at a dose of 1×1015 ions/cm2 and then annealed by rapid thermal annealing (RTA) processes at temperatures of 600, 650, 700, and 750 °C for 30 s duration. Double-crystal x-ray diffractometry was used to evaluate the level of the implant-induced damage and the damage removing efficiency of both ion implanted samples at different RTA conditions. The results show that the RTA process is more effective at removing damage from B11+ implanted samples than from those implanted with BF+2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116470
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  • 10
    Electronic Resource
    Electronic Resource
    Fabrication of p-channel polycrystalline Si1−xGex thin-film transistors by ultrahigh vacuum chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1700-1702 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this report, we present a novel approach for fabricating polycrystalline silicon-germanium thin-film transistors at low temperatures (≤550 °C). A bottom gate configuration is used for this approach, and an i-Si1−xGex/i-Si/p+-Si1−yGey multilayer is deposited sequentially on the gate oxide using an ultra-high vacuum chemical vapor deposition technique. The i-Si1−xGex serves as the channel while the i-Si is used as a buffer layer for allowing p+-Si1−yGey to be etched selectively on. p-channel thin-film transistors with a field-effect mobility of 13 cm2/V s were achieved using this method, which is superior to those grown by low pressure chemical vapor deposition. Our results indicate that the deposition of poly-Si1−xGex/poly-Si multilayer structure would be a promising way for polycrystalline thin-film device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112890
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