ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Collection
Keywords
Publisher
Language
Years
  • 1
    facet.materialart.
    Unknown
    Chapter 37 Introduction to Section 6 (2022)
    Taylor & Francis | Routledge
    Details
    Publication Date: 2024-03-23
    Description: This handbook addresses a growing list of challenges faced by regions and cities in the Pacific;Rim, drawing connections around the what, why, and how questions that are fundamental;to sustainable development policies and planning practices. These include the connection;between cities and surrounding landscapes, across different boundaries and scales; the persistence;of environmental and development inequities; and the growing impacts of global;climate change, including how physical conditions and social implications are being anticipated;and addressed. Building upon localized knowledge and contextualized experiences,;this edited collection brings attention to place-;based;approaches across the Pacific Rim and;makes an important contribution to the scholarly and practical understanding of sustainable;urban development models that have mostly emerged out of the Western experiences. Nine;sections, each grounded in research, dialogue, and collaboration with practical examples and;analysis, focus on a theme or dimension that carries critical impacts on a holistic vision of city-;landscape;development, such as resilient communities, ecosystem services and biodiversity,;energy, water, health, and planning and engagement.;This international edited collection will appeal to academics and students engaged in;research involving landscape architecture, architecture, planning, public policy, law, urban;studies, geography, environmental science, and area studies. It also informs policy makers,;professionals, and advocates of actionable knowledge and adoptable ideas by connecting;those issues with the Sustainable Development Goals (SDGs);of the United Nations. The;collection of writings presented in this book speaks to multiyear collaboration of scholars;through the APRU Sustainable Cities and Landscapes (SCL);Program and its global network,;facilitated by SCL Annual Conferences and involving more than 100 contributors;from more than 30 institutions.
    Keywords: city-landscape development ; development inequities ; Pacific Rim ; sustainable development policies ; sustainable urban development ; thema EDItEUR::A The Arts::AM Architecture::AMC Architectural structure and design::AMCR Environmentally-friendly (‘green’) architecture and design ; thema EDItEUR::A The Arts::AM Architecture::AMV Landscape architecture and design::AMVD City and town planning: architectural aspects ; thema EDItEUR::R Earth Sciences, Geography, Environment, Planning::RN The environment::RNC Applied ecology
    Language: English
    Format: image/jpeg
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    E-BOOK
  • 2
    facet.materialart.
    Unknown
    Chapter 36 Current States, Challenges, and Opportunities of the Intelligent Tutoring Systems (ITS) in Developing Countries in Asia (2021)
    Taylor & Francis | Routledge
    Details
    Publication Date: 2024-04-07
    Description: This chapter provides an overview of ITS-related research undertaken in Asian developing countries. The chapter begins with a brief overview of the development and nature of ITSs. It then outlines the methods for selecting and analyzing the literature used for the study, describing the research foci of these studies and highlighting the findings in relation to the effectiveness of ITSs developed or deployed in these countries. The chapter concludes with a discussion of the limitations of current ITS research and identifies potential areas for further study.
    Keywords: its ; intelligent tutoring systems (its) ; asia ; research ; its ; intelligent tutoring systems (its) ; asia ; research ; Developing country ; Educational technology ; Effect size ; Mathematics ; Meta-analysis ; Philippines ; User interface ; thema EDItEUR::J Society and Social Sciences::JN Education
    Language: English
    Format: image/jpeg
    Format: image/jpeg
    Format: image/jpeg
    Format: image/jpeg
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    E-BOOK
  • 3
    Electronic Resource
    Electronic Resource
    Effect of Total Soymilk Solids on Acid Production by Selected Lactobacilli (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 55 (1990), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Soymilk was prepared from soybeans using extraction ratios of 1:6, 1:7, 1:8, 1:9, and 1:10 (dry beans:water). Total solids, protein, and carbohydrate increased when extraction ratios of soybeans to water were increased. Soymilk was fermented by Lactobacillus fermentum NRRL B-585 or Lactobacillus acidophilus NRRL B-1910 or B-2092 and evaluated as a substrate for acid production. Mean values of acid production were: NRRL B-585 7.00 to 16.15, B-1910 32.30 to 39.10, and B-2092 27.20 to 34.85 (μmole lactic acid/gram soymilk). B-1910 and B-2092 grew better than B-585, in soymilk without fortification. Effects of protein and carbohydrate contents of soymilk on acid production were different among strains of lactobacilli.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1990.tb03590.x
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Switching characteristics of hydrogenated amorphous silicon/crystalline silicon heterojunction devices (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1034-1036 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new structure of a three-terminal hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction switching device is successfully developed. The device can be controlled by a gate bias. The switching voltage, holding voltage, and switching current all increase with an increase of undoped a-Si:H thickness. The electrical characteristics and switching phenomena of this device are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102607
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Selective epitaxial growth of GaInP by low-pressure metal-organic chemical-vapor deposition using ethyldimethylindium as In source (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2217-2219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated the feasibility of selective epitaxial growth (SEG) of GaInP using low-pressure metal-organic chemical-vapor deposition (LPMOCVD) with the combination of ethyldimethylindium (EDMIn) and triethylgallium (TEGa) as the group-III sources. Complete selective epitaxy can be achieved at a growth temperature of 675 °C and a growth pressure of 40 Torr. The deposition of Ga-rich polycrystalline GaInP on Si3N4 film occurs at lower temperatures. Although the incorporation efficiency of TEGa into GaInP is much lower than that of trimethylgallium, the combination of EDMIn and TEGa has been found to be a good candidate for SEG of GaInP. Low-temperature photoluminescence shows that the selectively grown epitaxial layer has good optical quality and is useful for light emitting device applications. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113039
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Fabrication of p-channel polycrystalline Si1−xGex thin-film transistors by ultrahigh vacuum chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1700-1702 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this report, we present a novel approach for fabricating polycrystalline silicon-germanium thin-film transistors at low temperatures (≤550 °C). A bottom gate configuration is used for this approach, and an i-Si1−xGex/i-Si/p+-Si1−yGey multilayer is deposited sequentially on the gate oxide using an ultra-high vacuum chemical vapor deposition technique. The i-Si1−xGex serves as the channel while the i-Si is used as a buffer layer for allowing p+-Si1−yGey to be etched selectively on. p-channel thin-film transistors with a field-effect mobility of 13 cm2/V s were achieved using this method, which is superior to those grown by low pressure chemical vapor deposition. Our results indicate that the deposition of poly-Si1−xGex/poly-Si multilayer structure would be a promising way for polycrystalline thin-film device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112890
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Magnesium doping of InGaAlP grown by low-pressure metalorganic chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1269-1271 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bis(cyclopentadienyl) magnesium, CP2Mg, was used as a magnesium dopant in the InGaAlP layers by low-pressure metalorganic chemical vapor deposition. The hazy surface morphology of heavily doped InGaAlP layers is significantly improved by using magnesium dopant instead of the conventional zinc dopant. We demonstrate that the effective doping efficiency of magnesium is two orders of magnitude higher than that of zinc dopant in the heavily doped InGaAlP layer grown at 720 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112091
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Deposition of in situ boron-doped polycrystalline silicon films at reduced pressures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 763-765 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the deposition of in situ boron-doped polycrystalline Si films on the SiO2 surface with reduced growth pressures at 550 °C. The deposition rate of these films decreased as the doping level was greater than 1019 cm−3. Such a result is in sharp contrast to what has been observed previously for similar films grown with conventional low pressure chemical vapor deposition techniques. It was also found that the incubation time prior to the deposition of these films diminished as the doping level was increased to 3×1020 cm−3 or higher. It is attributed to the preferential adsorption of boron atoms on the SiO2 surface at the initial stage of growth, which facilitates the nucleation of Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111005
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Analysis of high-field hole transport characteristics in Si1−xGex alloys with a bond orbital band structure (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 259-263 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an analysis of high-field hole transport in strained Si1−xGex alloys using a Monte Carlo technique. A bond orbital model is employed to calculate the valence-band structure in the simulation so that the transport behavior of high-energy holes can be described accurately. The model combines the k⋅p and the tight binding methods and contains no fitting parameters. The spin–orbit interaction and lattice-mismatch-induced biaxial compressive strain are included in the model. The steady-state hole drift velocity and the impact ionization rate are calculated as a function of an electric field up to 500 kV/cm. Good agreement between experiment and simulation is obtained. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360939
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Effect of boron doping on the structural properties of polycrystalline silicon films grown at reduced pressures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1572-1577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition and properties of in situ boron-doped polycrystalline silicon (poly-Si) films grown at 550 °C were investigated using an ultrahigh vacuum chemical vapor deposition system. It is observed that, if the doping level is high enough, the boron incorporation would significantly reduce the deposition rate, impede the grain growth, and degrade the crystallinity of the poly-Si films. We also found that the preferential adsorption of boron atoms on the SiO2 surface at the initial stage of deposition shortened the incubation time of deposition. The property of trapping states at the grain boundary is also examined, and a density of about 4.7×1012 cm−2 is obtained for poly-Si films with a doping level less than 2.2×1019 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357735
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...