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  • 1
    Publication Date: 2015-12-31
    Description: In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 2
    Publication Date: 2016-03-08
    Description: Here, we propose to exploit the low energy bandwidth, small wavelength, and penetration power of ultrashort pulses from XFELs for resonant Small Angle Scattering (SAXS) on plasma structures in laser excited plasmas. Small angle scattering allows to detect nanoscale density fluctuations in forward scattering direction. Typically, the SAXS signal from laser excited plasmas is expected to be dominated by the free electron distribution. We propose that the ionic scattering signal becomes visible when the X-ray energy is in resonance with an electron transition between two bound states (resonant coherent X-ray diffraction). In this case, the scattering cross-section dramatically increases so that the signal of X-ray scattering from ions silhouettes against the free electron scattering background which allows to measure the opacity and derived quantities with high spatial and temporal resolution, being fundamentally limited only by the X-ray wavelength and timing. Deriving quantities such as ion spatial distribution, charge state distribution, and plasma temperature with such high spatial and temporal resolution will make a vast number of processes in shortpulse laser-solid interaction accessible for direct experimental observation, e.g., hole-boring and shock propagation, filamentation and instability dynamics, electron transport, heating, and ultrafast ionization dynamics.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
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  • 3
    Publication Date: 2016-06-16
    Description: The dynamics of bulk heating and ionization is investigated both in simulations and theory, which determines the crucial plasma parameters such as plasma temperature and density in ultra-short relativistic laser-solid target interactions. During laser-plasma interactions, the solid density plasma absorbs a fraction of laser energy and converts it into kinetic energy of electrons. A portion of the electrons with relativistic kinetic energy goes through the solid density plasma and transfers energy into the bulk electrons, which results in bulk electron heating. The bulk electron heating is finally translated into the processes of bulk collisional ionization inside the solid target. A simple model based on the Ohmic heating mechanism indicates that the local and temporal profile of bulk return current is essential to determine the temporal evolution of bulk electron temperature. A series of particle-in-cell simulations showing the local heating model is robust in the cases of target with a preplasma and without a preplasma. Predicting the bulk electron heating is then benefit for understanding the collisional ionization dynamics inside the solid targets. The connection of the heating and ionization inside the solid target is further studied using Thomas-Fermi model.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
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  • 4
    Publication Date: 2016-02-24
    Description: In this paper, an opto-mechanical coupled-ring reflector driven by optical gradient force is applied in an external-cavity tunable laser. A pair of mutually coupled ring resonators with a free-standing arc serves as a movable reflector. It obtains a 13.3-nm wavelength tuning range based on an opto-mechanical lasing-wavelength tuning coefficient of 127 GHz/nm. The potential applications include optical network, on-chip optical trapping, sensing, and biology detection.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 5
    Publication Date: 2015-06-30
    Description: Neutron yields have direct correlation with the energy of incident deuterons in experiments of laser deuterated target interaction [Roth et al. , Phys. Rev. Lett. 110 , 044802 (2013) and Higginson et al. , Phys. Plasmas 18 , 100703 (2011)], while deuterated plasma density is also an important parameter. Experiments at the Shenguang II laser facility have produced neutrons with energy of 2.45 MeV using d (d, n) He reaction. Deuterated foil target and K-shaped target were employed to study the influence of plasma density on neutron yields. Neutron yield generated by K-shaped target (nearly 10 6 ) was two times higher than by foil target because the K-shaped target results in higher density plasma. Interferometry and multi hydro-dynamics simulation confirmed the importance of plasma density for enhancement of neutron yields.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 929-936 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxidation kinetics for both dry and wet oxidation of epitaxial NiSi2 (200 nm)/(001)Si samples as well as dry oxidation of polycrystalline NiSi2 (200 nm)/(111)Si and epitaxial NiSi2 (600 nm)/(111)Si samples have been studied by transmission electron microscopy. Comparing oxidation kinetics data of 200-nm-thick epitaxial NiSi2 on (001) and (111)Si, activation energies of the parabolic rate constants are rather close, whereas those for linear rate constants are substantially different. The orientation dependence of the linear activation energies is explained in terms of the total number of available Si atoms for oxidation as a function of the substrate orientation. Oxide growth rate was found to be higher in polycrystalline NiSi2/(111)Si samples than that in epitaxial NiSi2/(111)Si samples. Strong influence of the grain boundaries of NiSi2 on oxidation kinetics was observed with the grain boundaries serving as fast paths for oxidation. For dry oxidation of epitaxial NiSi2 (600 nm)/(111)Si samples, both parabolic and linear activation energies are higher than those of Ni(200 nm)/(111)Si samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 205-210 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pure Si2H6 and GeH4 are used to grow Si and Si1−xGex epilayers at 550 °C by ultrahigh vacuum-chemical molecular epitaxy. 0.1% B2H6 and 100 ppm PH3 diluted in H2 are used as the p- and n-type dopant gases in Si/Si1−xGex epitaxy. The Ge mole fraction x and the growth rate of Si1−xGex epilayers show very strong dependence on the total source gas flow rate ([GeH4]+[Si2H6]) and the source gas ratio ([GeH4]/[GeH4]+[Si2H 6]). The results can be explained by the relationships of the source fluxes, relative incorporation efficiency at activated surface sites, and hydrogen desorption under different growth conditions. The boron concentration of Si1−xGex increases with increasing GeH4 flow rate by keeping Si2H6 and B2H6 flow rates constant. It may be due to the increase of the surface sites which is caused by the increase of the hydrogen desorption rate when a higher Ge mole fraction epilayer is grown. The phosphorus concentrations of Si and Si1−xGex show different behavior with PH3 flux at higher PH3 flow rates while one increases linearly and the other becomes saturated, respectively. These results can be explained by a model based on the different levels of the effects of phosphorus blocking of surface-activated sites between Si and Si1−xGex epilayers. This effect can also be used to explain the fact that a smaller decrease in the growth rates of Si1−xGex epilayers occurs at a higher PH3 flow rate. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 202-206 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface states of sol-gel derived PbTiO3 thin films on Si substrates before and after Ar+ sputtering were studied by x-ray photoelectron spectroscopy (XPS). The results showed that there was no residual carbon or other impurity element in the films except some carbon surface contamination due to specimen handling or pumping oil. A large amount of absorbed oxygen was near the surfaces of the films. The chemical composition of the films was found to be stoichiometric, as proved by inductively coupled plasma results. The valence states of the ions indicated that the films were PbTiO3 with perovskite structure. The XPS spectra of the films after Ar+ sputtering for 10 min differed greatly from those of as-prepared films. This probably results from the preferred sputtering of lead atoms and the production of many new dangling bonds during Ar+ bombardment. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4921-4923 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The unipolar Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition at 550 °C is demonstrated. The dark current density measured at 77 K is (2.5±0.1)×10−7 A/cm2 for the barrier height of 176±8 meV, at a reverse bias of 1 V. The barrier heights are measured from the activation analysis of the saturation current and compared to the theoretical values. The barrier height decreases as the thickness of the SiGe strained layer exceeds the critical thickness.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 865-870 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy has been applied to study oxidation kinetics of CoSi2 on silicon for both dry and wet oxidation. Care was taken to determine the activation energies of oxidation in the temperature and time regime where the islanding of CoSi2 does not occur. For dry oxidation, activation energies for parabolic and linear growth were found to be 1.91 and 2.01 eV (±0.1 eV), respectively. For wet oxidation, activation energies for parabolic and linear growth were found to be 1.75 and 1.68 eV (±0.1 eV), respectively. The activation energy of the parabolic rate constant is substantially different from those obtained previously. The difference is attributed to the occurrence of islanding during oxidation in the previous study. A comparison of oxidation kinetics of CoSi2, NiSi2, TiSi2 on silicon with pure silicon substrates indicated that the oxidation kinetics are practically the same for CoSi2 and NiSi2 in the parabolic growth regime, but substantially different from those of TiSi2 on silicon and pure silicon. The similarity in oxidation kinetics of cubic CaF2 structure CoSi2 and NiSi2 on silicon with small mismatches to silicon is correlated to essentially the same stress level in these two silicides during the oxidation.
    Type of Medium: Electronic Resource
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