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  • American Institute of Physics (AIP)  (7)
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  • 1
    Electronic Resource
    Electronic Resource
    X-ray characterization of InAs laser structures grown by molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2528-2530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An x-ray interference effect was used to characterize a set of strained layer laser structures containing N monolayers of InAs (N=1, 3, 5, 7) conveniently distributed in the quantum well active region. A sample containing 100 A(ring) of Ga0.8In0.2As in the quantum well was also grown and characterized for comparison. Structural parameters such as thickness, chemical composition, and strain status of the different layers (cladding, waveguide, and quantum well layers) as well as the relaxation process and critical thickness due to increasing InAs content in the active region were studied. It was found that indium content was very close to the design values and that the whole structure is coherent with the substrate for 1 and 3 monolayers of InAs (and 100 A(ring) of Ga0.8In0.2As) while the structure starts to relax by dislocation formation for 5 monolayers of InAs and is clearly relaxed for 7 monolayers of InAs. These x-ray results are in full agreement with transmission electron microscopy and characterization of the structures as laser devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351550
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence characterization of GaAs quantum well laser structure with AlAs/GaAs superlattices waveguide (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5861-5866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dependence on the excitation power and temperature of the photoluminescence emission of GaAs quantum well laser structures using GaAs/AlAs superlattices in the waveguide is reported. The effects related to a quality reduction due to the presence of a thick ternary AlGaAs cladding layer in the bottom of the laser structure were elucidated by comparing to the photoluminescence of a similar waveguide structure, except for the AlGaAs bottom layer. The excitation power dependence shows the strong excitonic origin of the light emission in the temperature range 4–300 K in both structures. Carrier transport mechanisms through the superlattices is analyzed from the evolution of the photoluminescence of the quantum well and the superlattice confining layers; a structure dependent transparency temperature is defined, at which transport changes from tunneling assisted to extended minibands regime. The value of this parameter depends on the localized states in the superlattice minibands, caused by interface roughness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351891
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2447-2451 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SnTe-doped InP layers were grown at low temperature by solid-source atomic layer molecular beam epitaxy. The samples were characterized by Hall measurements versus temperature, low temperature photoluminescence, x-ray diffraction, and secondary ion mass spectroscopy. The temperature of the SnTe effusion cell was varied from 320 to 440 °C, and the free electron concentration measured at room temperature ranged between 2.0×1016 cm−3 and 5.6×1018 cm−3 with the corresponding Hall mobility varying from 2320 to 1042 cm2/V s. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337599
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of Be-doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6567-6570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beryllium-doped InP layers have been grown by solid source atomic layer molecular beam epitaxy at low substrate temperature. The residual n-type doping was reduced by controlling both the amplitude and the length of the phosphorus pulse. We have shown a well controlled p-type doping and obtained a hole concentration in the range 4×1017–3×1019 cm−3 at room temperature. The electrical and optical properties of InP layers grown at low temperatures were investigated by Hall effect and photoluminescence (PL) measurements. PL spectra for lightly doped samples have a near band emission at 1.41 eV and Be-related emissions around 1.38 eV. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370503
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of undoped InP grown at low temperature by atomic layer molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 402-404 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of undoped InP layers grown at low temperatures by solid source atomic layer molecular beam epitaxy are investigated. Phosphorus surface coverage during epitaxy is controlled by monitoring the evolution of reflection high-energy electron diffraction pattern during growth. An accurate phosphorus supply by means of a valved cracking phosphorus cell is employed. The relation between phosphorus incorporation and the electronic properties of the epilayers is examined, and it is found that, at a substrate temperature of 340 °C, residual electron concentration increases linearly with phosphorus flux. Residual doping of InP layers grown at 340 °C has been reduced down to 1×1016 cm−3, and Hall mobilities of 3260 cm2/V s at 300 K and 14 830 cm2/V s at 65 K are reported. Low-temperature photoluminescence of low background doping layers is dominated by near band transitions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359338
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  • 6
    Electronic Resource
    Electronic Resource
    Relaxation behavior of undoped InxGa1−xP 0.5〈x〈0.7 grown on GaAs by atomic layer molecular-beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3327-3332 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the relaxation behavior of compressive InxGa1−xP layers grown by atomic layer molecular-beam epitaxy at Ts=420 °C with x=56%±3% and x=67%±3%. Similar (thickness and composition) InxGa1−xP layers were grown under different growth conditions in order to assess the influence of the stoichiometry of the growth front on the structural properties and the relaxation process of this material system. All InxGa1−xP layers were characterized by double-crystal x-ray diffraction, transmission electron microscopy, and Nomarski interference. Our results show that surface stoichiometry during growth does not affect the relaxation behavior of InxGa1−xP layers but strongly determines their structural characteristics related to composition modulation features which appear in all our InxGa1−xP layers. We have established an empirical relation between residual strain and thickness. This relation makes predictable the residual strain of more complicated structures which can be introduced as buffer layers in lattice-mismatched heteroepitaxial systems. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363243
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  • 7
    Electronic Resource
    Electronic Resource
    Ga0.47In0.53As multiquantum well heterostructures, confined by pseudoquaternary (InP)n/(Ga0.47In0.53As)m short period superlattices lattice-matched to InP (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 891-893 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (InP)n/(Ga0.47In0.53As)m lattice-matched short-period superlattices have been used as pseudoquaternary material to confine Ga0.47In0.53As multiquantum wells in a GaxIn1−xAs/GaxIn1−xAsyP1−y/InP heterostructure. The samples have been grown by low-temperature atomic layer molecular beam epitaxy, using fast operating valved solid sources to generate P2 and As4 beams. X-ray diffraction was used to assess the structural quality of the samples. The effect of the superlattice period on the pseudoquaternary band gap is reported. Room-temperature photoluminescence wavelength of the multiquantum well structure is close to 1.55 μm. Growing short-period superlattices results in a much easier method to control band-gap energy than growing alternative quaternary material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108557
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