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  • 1
    Electronic Resource
    Electronic Resource
    Structural evolution within the one-phase region of a three-component microemulsion system: Water–n-decane–sodium-bis-ethylhexylsulfosuccinate (AOT) (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 1907-1918 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The continuous inversion from a water-in-oil (w/o) microemulsion at low temperatures to an oil-in-water (o/w) microemulsion at higher temperatures within the one-phase channel of water (0.6% NaCl)–n-decane–AOT microemulsion system is investigated by small angle neutron scattering (SANS). At constant AOT (surfactant) weight fraction γ of 12%, the structural evolution as a function of temperature takes place in different forms as the oil-to-water weight fraction α is varied from 15 to 90 %. At low o-w weight fractions (α=15 and 20 %) the microemulsions transform from a water-internal, oil-continuous structure at lower temperatures to an oil-internal, water-continuous droplet structure at higher temperatures jumping across an intermediate region of a lamellar phase (Lα). However, at higher o-w weight fractions (α=80 and 90 %) the evolution goes through a stage of percolation of the water droplets first into extended water clusters, then the structural inversion takes place probably through a transition of these water clusters into an entangled tubular structure. At equal oil-to-water volume ration (α=40%), the structure can be described as bicontinuous at both low and high temperatures. In this case we are able to extract two lengths characterizing the structure from SANS data using different models for the scattering length density fluctuation correlation function of a bicontinuous microemulsion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459068
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  • 2
    Electronic Resource
    Electronic Resource
    Oxygen on Pd(100): Order, reconstruction, and desorption (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 2071-2082 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have investigated the temperature and coverage-dependent transformations of the ordered structures of oxygen on Pd(100). The four ordered structures are the chemisorbed c(2×2) and p(2×2) lattices, and the reconstructed p(5×5) and ((5)1/2×(5)1/2)R27° lattices. We present evidence that the p(5×5) reconstruction forms in an activated stepfrom c(2×2) regions. The onset of p(5×5) formation is associated with an increase in oxygen sticking coefficient. In thermal desorption, there are three states which can be correlated directly with the structure of the adsorbed phase during desorption: At lowest coverage, the α state shows the traits of second-order kinetics and is due to desorption from a disordered adlayer. At higher coverage, the β state appears and is due to desorption from a layer with c(2×2) order. There is a lower barrier to desorption in the β state than in the α state because of the repulsive second-nearest-neighbor interactions in the c(2×2). At highest coverage, the sharp and narrow γ state emerges. This is accompanied by decomposition of the ((5)1/2×(5)1/2)R27° reconstruction, in which cooperative stabilization of the reconstruction by oxygen atoms effectively creates strong quasiattractive oxygen–oxygen interactions. There are interesting similarities between the oxygen-stabilized reconstructions of Pd(100) and the initial stages of oxidation of Ni(100), as well as the oxygen-stabilized reconstructions of Pt(100). The data are obtained from low-energy electron diffraction coupled with a computer-interfaced Video camera, Auger electron spectroscopy, and thermal desorption spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454084
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  • 3
    Electronic Resource
    Electronic Resource
    A high resolution long travel friction-drive micropositioner with programmable step size (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2776-2782 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A piezoelectric-driven Scott–Russel linear micropositioner utilizing the stick-slip effect of friction to drive a slider is presented. Effects of sawtooth, impulse, and transcendental electrical wave forms on the device performance are studied via numerical simulation and experiment test. The experiment demonstrates that positioning step sizes of 0.05–120 μm can be achieved at low input voltages of 2–25 V and essentially with unlimited travel range. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149794
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  • 4
    Electronic Resource
    Electronic Resource
    Study of molecular-beam epitaxially grown GexSi1−x/Si layers by Raman scattering (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3634-3636 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain distribution of a GexSi1−x/Si strained layer superlattice (SLS) as a function of the distance from the superlattice/substrate interface has been studied by Raman spectroscopy. A small-angle bevel was made by angle lapping on a given thick GexSi1−x/Si SLS so that it is possible to probe the structure at different thicknesses. The Raman spectrum as a function of the distance from interface is then obtained. The results indicate that, as we move away from the substrate interface, the compression strain in the alloy layers decreases while the tensile strain in the Si layers increases. From linewidth measurement of the Raman peaks, it appears that there is an improved crystal quality and a lower concentration of defects going away from the substrate interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341401
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  • 5
    Electronic Resource
    Electronic Resource
    Mechanisms for the improved stability of C54–TiSi2 on (001)Si by the addition of N2 to Ar during Ti sputtering (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1779-1783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Addition of N2 to Ar during Ti sputtering has been found to improve the thermal stability of TiSi2. For samples sputtered with a mixture of Ar and N2, TiSi2 was found to be stable after 1050 °C, 30 s annealing. Furthermore, the phase transformation temperature from the C49 to C54 phase was not affected with the addition of a small amount of nitrogen. The stuffing of grain boundaries of TiSi2 and TiN/TiSi2 interfaces by nitrogen atoms is thought to retard the transport of Si and Ti atoms. In addition, titanium nitride particles embedded in TiSi2 near the TiN/TiSi2 interface may also protect the TiSi2 films from plastic deformation and retard the grain growth during high temperature annealing. Smaller average grain size of C54–TiSi2 in samples prepared with the addition of N2 to Ar during Ti sputtering than that in pure Ti samples is also beneficial in enhancing the thermal stability. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385577
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  • 6
    Electronic Resource
    Electronic Resource
    Interdiffusion in a symmetrically strained Ge/Si superlattice (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1253-1255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The x-ray diffraction technique is used to measure the interdiffusion coefficients of a symmetrically strained Ge/Si superlattice consisting of alternating Ge and Si layers grown on a Ge0.4Si0.6 buffer layer. The buffer layer was 200 nm thick and was grown on a Si (100) substrate in order to symmetrize the strain, and thus maintain pseudomorphic growth of the superlattice. After the sample was annealed at different temperatures with various times, the interdiffusion coefficient Dλ was determined by monitoring the intensity decay of the low-angle x-ray diffraction peak resulting from the superlattice structure. The activation energy is calculated to be 3.1±0.2 eV in the annealing temperature range of 640–780 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100731
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic and transport properties of Fe-Mo and Fe-W alloys : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6402-6404 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two series of polycrystalline Fe100−xMox and Fe100−xWx (0≤x≤10 at. %) alloys were made. In order to preserve a single bcc phase, alloy samples, depending on the x value, were quenched from various temperatures TQ. In general, TQ is higher than 850 °C, and increases with x. X-ray diffraction was used to check the phase and the lattice constant of each sample. Magnetoresistance, electrical resistivity, and magnetic moment were measured at 4 K. Those experimental data are analyzed for Fe-Cr, Fe-Mo, and Fe-W alloys, especially the effects of moving down along the VIB column from Cr to W on the transport and magnetic properties. Comparison is made with Co-based alloys, where the changes of the spin-up resistivity from Co-Ni to Co-Pd and from Co-Pd to Co-Pt are due to the increase in s-s scattering. For Fe-based alloys, however, because the spin-down d band is partially empty (the roles of spin-up and -down bands are reversed), the spin-down resistivity is from s-d scattering instead.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352610
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  • 8
    Electronic Resource
    Electronic Resource
    A study on the Kerr angle enhancement by the magnetic image effect (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5699-5699 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, new mechanisms have been proposed to explain the giant enhancements of M-O Kerr effect. In this work, we use magnetic image effect to explain the Kerr angle enhancement of M-O media on Co-base amorphous films. The M-O layer and reflection layer were produced by using conventional dc magnetron sputtering processes. The Kerr hysteresis loops of M-O films were measured with wavelength from 500 to 860 nm, and the peak applied field was 9 kOe. We have studied the enhancements of Kerr angle in TbFeCo amorphous film which sandwiched by AlN layers and backed with Co-base amorphous film. There is a remarkable increase of Kerr angle with value 1.85° at wavelength 640 nm. At wavelength 780 nm, the Kerr angle of magneto-optic medium on Co-base amorphous ribbon has been significantly enhanced by a factor of 3.1 as compared to that on Al foil. Because of its high permeability and low coercivity, the Co-base amorphous film serve as a magnetic shielding material which can induce the magnetic image effect for M-O film. Theoretical calculations show that the Kerr angle can be enhanced by the image magnetic field. The calculated values of Kerr angle are in good agreement with experiment results. An explicit equation to calculate the Kerr angle will be discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362221
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of the phase inversion in photoreflectance spectra from ZnSe/GaAs(001) heterostructures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1382-1384 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pump photon energy dependence of photoreflectance (PR) of a ZnSe/GaAs heterostructure has been measured at 77 K. The phase inversion in the PR signal is observed for the pump photon energy when it decreases from above to below the excitonic absorption edge of ZnSe. The observation of the phase inversion in PR is explained in terms of the modulation of the built-in electric field at the interface of the ZnSe/GaAs heterojunction, not at the ZnSe surface. It provides evidence of a built-in triangular-well potential and of hole traps at the ZnSe/GaAs interface. This argument is confirmed by photoreflectance excitation spectroscopy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122167
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  • 10
    Electronic Resource
    Electronic Resource
    Structural properties of ZnSe on GaAs grown by atomic layer epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 928-931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epilayers were grown on GaAs (100) substrates by atomic layer epitaxy modified from chemical-vapor deposition with thicknesses ranging from 600 to 6000 A(ring). X-ray-diffraction and micro-Raman scattering measurements were carried out to study the effects of strain in the ZnSe epilayers with different thicknesses. The increase in full width at half-maximum of double-crystal x-ray rocking curves was observed for layers thicker than the critical thickness, which indicates that the crystallinity gets strongly degraded when the layers are grown over the critical thickness. The critical thickness estimated by x-ray rocking curves is 1500 A(ring), while that obtained by micro-Raman scattering is 1000 A(ring). This difference suggests that the elastic strain depends on the layer depth for ZnSe epilayers around the critical thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357770
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