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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3634-3636 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain distribution of a GexSi1−x/Si strained layer superlattice (SLS) as a function of the distance from the superlattice/substrate interface has been studied by Raman spectroscopy. A small-angle bevel was made by angle lapping on a given thick GexSi1−x/Si SLS so that it is possible to probe the structure at different thicknesses. The Raman spectrum as a function of the distance from interface is then obtained. The results indicate that, as we move away from the substrate interface, the compression strain in the alloy layers decreases while the tensile strain in the Si layers increases. From linewidth measurement of the Raman peaks, it appears that there is an improved crystal quality and a lower concentration of defects going away from the substrate interface.
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1055-1057 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant Raman scattering with photon energies between 2.35 and 2.7 eV has been used to study both the alloy composition and local structural order in Hg1−xCdxTe for x values near 0.25 and for samples prepared by bulk growth, liquid phase epitaxy, molecular beam epitaxy, and metalorganic chemical vapor deposition. The resonance behavior of the HgTe-like transverse optical and longitudinal optical (LO) modes, the CdTe-like LO mode, and that of an additional mode probably due to preferential clustering of three Hg and one Cd about the Te sites, all indicate strong enhancement at the E1 edge. However, surfaces annealed with a Nd:yttrium-aluminum-garnet-pumped dye laser show strong suppression of the cluster mode (but not the LO mode) in all samples, which suggests that extremely rapid epitaxial regrowth may inhibit the 3:1 cluster formation.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1253-1255 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The x-ray diffraction technique is used to measure the interdiffusion coefficients of a symmetrically strained Ge/Si superlattice consisting of alternating Ge and Si layers grown on a Ge0.4Si0.6 buffer layer. The buffer layer was 200 nm thick and was grown on a Si (100) substrate in order to symmetrize the strain, and thus maintain pseudomorphic growth of the superlattice. After the sample was annealed at different temperatures with various times, the interdiffusion coefficient Dλ was determined by monitoring the intensity decay of the low-angle x-ray diffraction peak resulting from the superlattice structure. The activation energy is calculated to be 3.1±0.2 eV in the annealing temperature range of 640–780 °C.
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 918-923 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1521-1523 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe single crystals from several sources have been examined to detect the presence of impurities which may be detrimental to applications in the fabrication of IR detectors. Distinctive electron paramagnetic resonance (EPR) signals from several donor impurities, including substitutional paramagnetic Fe, were found in several samples. A photoluminescence (PL) transition at 1.1 eV was also seen in these crystals and the amplitudes of the PL signals and the Fe EPR signals are strongly correlated. Elemental analysis of the samples indicates that EPR and PL are able to detect Fe concentrations of less than 0.1 ppm.
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 75 (1971), S. 1251-1255 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4305-4313 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SimGen strained layer superlattice (SLS) structures were grown by molecular beam epitaxy on GexSi1−x buffer layers on 〈100〉 Si substrates to determine the effects of buffer layer composition, SLS thickness ratio, and superlattice periodicity, on the overall quality of these structures. X-ray diffraction methods were used to determine how closely actual periodicities and compositions met targeted values, and to evaluate the quality of these samples. In most instances the as-grown structures matched the targeted values to within 10%, though in some instances deviations of 20–25% in either the period or composition were observed. The quality of the SLS structures was greatly dependent on the composition of the buffer layer on which it was grown. SimGen SLS structures grown on Si- and Ge-rich buffer layers were of much higher quality than SimGem SLSs grown on Ge0.50Si0.50 layers, but the x-ray rocking curves of the SimGen samples indicated that they were far from perfect and contained moderate levels of defects. These results were confirmed by cross sectional transmission electron microscopy, which showed that the SimGem structures contained significant numbers of dislocations and that the layers were nonuniform in thickness and wavy in appearance. SimGen structures, however, displayed fewer defects but some dislocations and nonparallelism of layers were still observed.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3036-3038 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The proton spin-lattice relaxation times (T1) and magnetic susceptibilities (χ) are used to study the effects of hydrogen on the electronic structure properties of the intermetallic compound TiCo. Hydrogen addition systematically decreases both χ(T) and the proton (T1T)−1/2 parameters, which are directly proportional to the local density of the Fermi-level electronic states. The behavior for the TiCoHx is completely opposite to that previously found for several other Ti-based metal hydrides where these parameters tend to increase with hydrogen content. These differences are attributed to the Fermi levels falling on alternate sides of peaks in the densities of electronic states. The present results for TiCoHx are compared with the magnetic properties and the theoretical band structures for the closely related hydride TiFeHx.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3542-3544 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic susceptibilities χ(T) of the amorphous ternary hydrides of the paramagnetic metallic glasses a-Zr2Pd and a-Zr3Rh have been measured between 7 and 300 K. It has been found that χ(T) of both a-Zr2PdHx and a-Zr3RhHx decrease substantially with increasing hydrogen content. This behavior is primarily attributed to reductions in the densities of the Fermi level electronic states. Although χ(T) for crystalline Zr2Pd (MoSi2 structure type) is smaller than the susceptibility of the a-Zr2Pd glass, χ(T) for a crystallized Zr3Rh sample was found to increase relative to the initial susceptibility for this glass.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 545-553 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability behavior of the metallic glasses a-Zr2Pd and a-Zr3Rh was studied by means of x-ray diffraction, differential scanning calorimetry (DSC), and isothermal annealing. While several a-Zr2Pd alloys each exhibit two exothermic peaks during the DSC heating sequence, three different types of exothermic behavior have been observed for a-Zr3Rh alloys with nominally identical stoichiometries. These variations in DSC behavior are probably related to different conditions during the rapid quenching procedures. The three types of differential scanning calorimeter behavior shown by a-Zr3Rh alloys include (1) two peaks of about 715 K and 790 K, (2) a single large peak at about 730 K, and (3) a strong peak at about 725 K with a much weaker peak at about 850 K. The a-Zr3Rh alloys of type (1) crystallize to form a tetragonal lattice that is a newly identified Zr3Rh phase of the D0e structure type. The a-Zr3Rh alloys of types (2) and (3) crystallize first to form a face-centered cubic lattice which appears to be an E93-type structure. Both the D0e and E93 phases are metastable and ultimately anneal to the Zr2Rh phase with the tetragonal C16-type structure. The formation of the Zr2Rh phases with either the C16 or E93 structure is accompanied by α-Zr. The a-Zr2Pd alloys undergo a two-step crystallization with the initial formation of a disordered body-centered-cubic phase followed by the tetragonal Zr2Pd phase with the C11b-type structure.
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