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  • American Institute of Physics (AIP)  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Formation of continuous CoSi2 layers by high Co dose implantation into Si(100) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1629-1634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the mechanisms for formation of continuous CoSi2 layers by high dose (∼1017 cm−2) Co implantation into Si(100). For single dose implantations, a critical dose exists above which coalescence into a single layer occurs after a vacuum anneal at 1000 °C for 30 min, but below which disconnected, strongly {111} faceted precipitates form. Transmission electron microscopy and Rutherford backscattering suggest that the key condition for continuous layer coalescence to occur is the formation of a connected array of small silicide precipitates either as-implanted or during an intermediate 600 °C anneal. This postulate is supported by the observation that super-critical doses which are builtup by successive subcritical doses and 1000 °C anneals do not coalesce into single layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346643
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  • 2
    Electronic Resource
    Electronic Resource
    Radiant heater assembly for limited reaction-rate processing applications (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3174-3176 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We discuss the design and performance of a radiant heating assembly for limited reaction-rate processing applications. The heating assembly is fabricated in stainless steel on a 300 mm bore flange for incorporation with an ultrahigh vacuum compatible low-pressure chemical vapor deposition system. The heating source is an array of 18 tungsten-halogen lamps; each lamp is rated at 360 W and has its own integral parabolic reflector. A 55-mm-diam "O'' ring sealed quartz window is mounted in front of each lamp allowing the transmission of infrared radiation into a water-cooled stainless-steel deposition chamber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142571
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  • 3
    Electronic Resource
    Electronic Resource
    Enhanced strain relaxation in Si/GexSi1−x/Si heterostructures via point-defect concentrations introduced by ion implantation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2445-2447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that strain relaxation during annealing of Si/GexSi1−x/Si heterostructures is significantly enhanced if the strained GexSi1−x layers are implanted with p (B) or n (As) type dopants below the amorphization dose. Comparison of strain relaxation during in situ annealing studies in a transmission electron microscope between unimplanted and implanted structures reveals that the latter show residual strains substantialy below those for unimplanted structures. We propose that this enhanced relaxation is caused by increased dislocation nucleation probabilities due to the high point-defect concentrations arising from implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102904
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  • 4
    Electronic Resource
    Electronic Resource
    Boron diffusion across silicon–silicon germanium boundaries (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1988-1994 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Most boron diffusion studies in Si–Ge have been made in regions of uniform germanium content. In this paper diffusion is observed from a boron-doped epitaxial silicon layer across surrounding Si–Ge layers. Pileup of boron in the Si–Ge layers shows that the activity coefficient for boron in Si–Ge is lower than that for pure silicon. A simple pairing model for Si–B interaction fitted the pileup quite well, with the same equilibrium constant applying to both Si0.9Ge0.1 and Si0.97Ge0.03 layers. The effect of this was simply to immobilize a significant fraction of the boron while retaining its acceptor qualities, the ratio of immobile boron to normal substitutional boron being proportional to the germanium content. Quasielectric field effects at the Si–SiGe interface have a strong effect on the results obtained. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366927
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  • 5
    Electronic Resource
    Electronic Resource
    Dislocation glide in {110} planes in semiconductors with diamond or zinc-blende structure (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2206-2208 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation of the secondary a/2〈110〉{110} glide systems as observed by transmission electron microscopy in epitaxial Ge(Si) and InGaAs layers grown on comparatively highly misfitting substrates, is rationalized in terms of a mechanical equilibrium analysis that includes a frictional force on the gliding dislocations. The conditions for occurrence of further secondary glide planes, such as {113} and {100}, are outlined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109443
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  • 6
    Electronic Resource
    Electronic Resource
    Observations of new misfit dislocation configurations and slip systems at ultrahigh stresses in the (Al)GaAs/InxGa1−xAs/GaAs(100) system (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1327-1329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed new misfit dislocation configurations and slip systems in (Al)GaAs/InxGa1−xAs/GaAs(100) heterostructures for x≥0.4. Dislocations are observed running along 〈001〉 directions in the interface, which are inconsistent with conventional glide of misfit dislocations on {111} planes in the zincblende lattice. Diffraction contrast analysis in a transmission electron microscope (TEM) shows that these dislocations are of the edge type with b=a/2〈011〉, inclined at 45° to the interface. In situ TEM heating experiments reveal dislocation propagation velocities ∼tens of μm s−1 at 600 °C, suggesting that they are moving by glide, rather than climb. The only slip planes consistent with these observations are {101} planes inclined to the interface. This represents a new relaxation mechanism in highly strained semiconductor heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107332
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