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  • 1
    Electronic Resource
    Electronic Resource
    The role of carbon on the electrical properties of polycrystalline Si1−yCy and Si0.82−yGe0.18Cy films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6182-6189 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparison is made of the electrical effects of carbon in n- and p-type in situ doped polycrystalline Si1−yCy and Si0.82−yGe0.18Cy layers. Values of resistivity as a function of temperature, effective carrier concentration and Hall mobility are reported. The n-type polycrystalline Si1−yCy and Si0.82−yGe0.18Cy films show dramatic increases in resistivity with carbon content, rising from 0.044 Ω cm to 450 Ω cm (0 and 0.8% C) and 0.01 Ω cm to 2.4 Ω cm (0 and 0.6% C), respectively. In contrast, the increase in B-doped films is much less severe, rising from 0.001 Ω cm to 0.939 Ω cm (0 and 7.9% C) and 0.003 Ω cm to 0.015 Ω cm (0 and 4% C) for the Si1−yCy and Si0.82−yGe0.18Cy layers, respectively. The grain boundary energy barrier, determined from the temperature dependence of the resistivity, is found to vary as the square of the C content in the n-type polycrystalline Si1−yCy and Si0.82−yGe0.18Cy layers, but linearly in the p-type Si1−yCy layers. The square law dependence seen in the n-type layers for C contents up to 0.9% is explained by an increase in the grain boundary trap density due to the presence of carbon, whereas the linear relationship seen in the p-type layers for C contents between 2% and 8% is explained by a shift in the grain boundary trap energy toward the valence band. Finally, lower values of grain boundary energy barrier are obtained in p-type Si0.82−yGe0.18Cy layers with a C content of 4% than in equivalent Si1−yCy layers, which could be explained by a larger shift in trap energy toward the valence band. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343896
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  • 2
    Electronic Resource
    Electronic Resource
    Complete photonic bandgaps in 12-fold symmetric quasicrystals (2000)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 404 (2000), S. 740-743 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Photonic crystals are attracting current interest for a variety of reasons, such as their ability to inhibit the spontaneous emission of light. This and related properties arise from the formation of photonic bandgaps, whereby multiple scattering of photons by lattices of periodically ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35008023
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  • 3
    Electronic Resource
    Electronic Resource
    Plasma chemistry at long mean-free-paths (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1940-1945 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A long mean-free-path (lmfp) model of transport of neutral particles has been developed and applied to the chemistry of a low neutral-pressure ((approximately-less-than)2 mTorr) plasma etching system. In cylindrical geometry, using coordinates (r,z) while ignoring angle φ, a transition matrix is set up for an arbitrary mfp that indicates the fraction of the particles originating in the cell at (r',z') that experience their next collision in the cell at (r,z). This matrix can be iterated, allowing for chemical reactions, to obtain the steady state density of the neutral species. It can also provide angular distributions of neutrals; at present, their energy distribution is not kept track of, although it will be in the future. The method has been applied to an electron cyclotron resonance plasma in CF4. Using the measured electron energy distribution, the breakdown of CF4 into the species responsible for etching is calculated. Densities of CF4, CF3, CF2, and F are presented for a wide range of conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356341
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  • 4
    Electronic Resource
    Electronic Resource
    Kinetic modeling of the α to γ transition in radio frequency discharges (1993)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 5 (1993), S. 646-649 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An accurate and comprehensive self-consistent kinetic model is applied to a helium radio frequency (rf) discharge which in experiments exhibits an "α to γ'' transition. The main conclusions are (i) there is good agreement (factor of 2) between the experiment and simulation in plasma density, power density, and current density across two orders of magnitude of the applied voltage. (ii) The bulk electron temperature exhibits a transition from high at low driving voltages to low at high voltages. The low-voltage regime exhibits a larger bulk electric field in the simulation. (iii) Multistep ionization is important under all conditions studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.860496
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  • 5
    Electronic Resource
    Electronic Resource
    Radiant heater assembly for limited reaction-rate processing applications (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3174-3176 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We discuss the design and performance of a radiant heating assembly for limited reaction-rate processing applications. The heating assembly is fabricated in stainless steel on a 300 mm bore flange for incorporation with an ultrahigh vacuum compatible low-pressure chemical vapor deposition system. The heating source is an array of 18 tungsten-halogen lamps; each lamp is rated at 360 W and has its own integral parabolic reflector. A 55-mm-diam "O'' ring sealed quartz window is mounted in front of each lamp allowing the transmission of infrared radiation into a water-cooled stainless-steel deposition chamber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142571
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  • 6
    Electronic Resource
    Electronic Resource
    Micromagnetic simulations of submicron cobalt dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5514-5516 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical simulations of submicron Co extruded elliptical dots were performed to illustrate the relative importance of different physical parameters on the switching behavior in the easy direction. Shape, size, magnetic moment magnitude, and the magnitude and distribution of the crystalline anisotropicity were varied. The simulation represents magnetostatic, exchange, and crystalline anisotropicity fields on a structured mesh using finite difference techniques. The smooth boundary of the dots is accurately represented by use of the embedded curve boundary method. Agreement with experimental hysteresis measurements of submicron dot arrays is obtained when an appropriate angular distribution of the grain anisotropicity axes is invoked. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373389
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical properties of in situ phosphorus- and boron-doped polycrystalline SiGeC films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 561-563 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sheet resistance, effective carrier concentration, and Hall mobility of in situ boron- and phosphorus-doped polycrystalline Si0.82−yGe0.18Cy films are presented for carbon contents between 0% and 4%. Phosphorus and boron doping levels of 4×1019 and 2×1020 cm−3 were achieved for the n- and p-type layers, respectively, and remained largely unaffected by carbon content. The phosphorus-doped films showed a dramatic increase in sheet resistivity and a corresponding drop in effective carrier concentration and Hall mobility. In contrast, the boron-doped films showed only a minor increase in resistivity. This is attributed to interstitial carbon increasing the defect density and also shifting the defect energy levels at the grain boundaries towards the valence band. This causes an increase in the grain-boundary energy barrier in n-type layers, but leaves the p-type layers largely unaffected. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127044
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  • 8
    Electronic Resource
    Electronic Resource
    Comparison of collision rates in particle-in-cell, Monte Carlo, and Boltzmann codes (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1299-1303 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Computational modeling is a key tool for studying collisional plasma discharges, including capacitive, inductive, and dc discharges. This work compares electron-neutral collision rates for a particle-in-cell code, a Monte Carlo code, a convected scheme Boltzmann code, and a spherical harmonic expansion Boltzmann code. In addition, comparisons with swarm experiments are presented where available. The comparison is performed over a range of reduced fields, E/N, appropriate to ac plasma display panels. The background gas is neon, with a simplified set of representative reactions. Ion and space charge effects are neglected. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362929
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  • 9
    Electronic Resource
    Electronic Resource
    High aspect ratio submicron silicon pillars fabricated by photoassisted electrochemical etching and oxidation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1877-1879 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for fabricating submicron free-standing silicon pillars has been developed. The silicon pillars have a high packing density, and aspect ratios over 50:1 can easily be achieved. Photoassisted electrochemical etching in hydrofluoric acid is used to etch deep macropores in n-type silicon wafers which have been patterned by standard photolithography. The regular macropores can be used for fabricating photonic band-gap structures. The bulk silicon remaining between the close-packed macropores is oxidized. Free-standing pillars are then formed by subsequently wet etching the silicon dioxide. The pillars are the initial structures for forming quantum wires using further oxidation and etch steps. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114362
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  • 10
    Electronic Resource
    Electronic Resource
    Recent developments in the design and fabrication of visible photonic band gap waveguide devices (1999)
    Springer
    Journal of materials science 10 (1999), S. 429-440 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this paper, we present the design, fabrication and initial optical testing of dielectric waveguide devices which incorporate photonic crystals with photonic band gaps (PBG) in the visible region of the spectrum. In the design of our devices we use a full three-dimensional plane wave analysis to solve the photonic band structure simultaneously with the dielectric waveguide boundary conditions for a fixed lattice and waveguide geometry. This takes into account the finite thickness of the waveguide core, and the evanescent wave in the dielectric cladding layers. Furthermore, we explain how the effective Bloch mode index can be extracted from the results. This enables us to tackle important problems associated with mode coupling between the input waveguide and guided Bloch modes within the porous PBG region, such as Fresnel reflections at the interface and up-scattering from the holes. Finally, we present the recent fabrication of quasi-periodic photonic crystals and PBG waveguide bends.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008970112219
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