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  • 1
    Electronic Resource
    Electronic Resource
    Subthermal photoproduct surface desorption distributions arising from excimer laser excitation of adsorbed trimethylaluminum (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 422-426 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Excimer laser photolysis of adsorbed trimethylaluminum has been studied using a time of flight mass spectrometric technique. Methyl molecules are found to desorb with reasonable efficiency at 193 nm, but leave the surface with surprisingly small amounts of kinetic energy. Whereas, direct excitation of a single Al–C bond with a 6.4 eV photon would result in ∼3.5 eV of excess energy, only 0.025 eV is observed in translation experimentally. Maxwell–Boltzmann fits to these desorption distributions yield a temperature of ∼150 K even though desorption occurs from surfaces at room temperature. Possible interpretations of this result are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454618
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  • 2
    Electronic Resource
    Electronic Resource
    Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1963-1965 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sequential surface reactions of trimethylaluminum and water vapor have been used to deposit Al2O3 on Si(100) surfaces. The self-limiting nature of the surface reactions allows precise control of the thickness of the deposited layers and gives rise to films with highly conformal step coverage. High quality dielectrics have been deposited at temperatures as low as 100 °C. Resistivities of 1017 Ω cm, breakdown strengths of 8×106 V/cm, and interface-state densities of 1011 states/eV cm2 have already been achieved and they suggest possible applications as a gate insulator or a dielectric passivation layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102337
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  • 3
    Electronic Resource
    Electronic Resource
    Growth temperature dependence of the Si(001)/SiO2 interface width (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 748-750 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth temperature dependence of the thin thermally oxidized Si(001)/SiO2 interface width was studied using synchrotron x-ray diffraction. Nine samples with oxide thickness of about 100 A(ring) were studied, with growth temperatures ranging from 800 to 1200 °C. The oxides were prepared by rapid thermal oxidation. We found that interfacial roughness decreases linearly with increasing growth temperature, with a measured interface width of 2.84 A(ring) for the sample grown at 800 °C, and 1.76 A(ring) when grown at 1200 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111054
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  • 4
    Electronic Resource
    Electronic Resource
    Chemomechanical polishing of silicon: Surface termination and mechanism of removal (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3115-3117 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared spectroscopy of Si(111) samples immediately after chemomechanical planarization with silica slurry ("siton polishing'') shows that the surfaces are predominantly terminated by hydrogen. This hydrogen termination is responsible for the observed strong hydrophobicity peak at a slurry pH of 11, at which point a monohydride termination prevails. At higher or lower pH, silanol groups replace some of the hydrogen species causing an increase in surface hydrophilicity. A removal mechanism is proposed which involves the interplay of oxidation by OH− and subsequent termination by H.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111365
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  • 5
    Electronic Resource
    Electronic Resource
    Insight into the dynamics of trimethylaluminum photolysis (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 81-83 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ab initio methods (Hartree–Fock, generalized valence bond, and configuration interaction) have been used to characterize the electronic states of molecular analogs to trimethylaluminum. An understanding of the mechanism of photoexcitation and subsequent dissociation emerges as the calculations reveal that optical excitation results in a metastable bound state rather than a directly dissociative state. The substantial excess energy associated with the transition is stored in electronic and vibrational degrees of freedom other than those associated with the dissociation coordinate. This interpretation allows a large body of observations to be simply understood and has implications for the implementation of the technology of laser photolysis for thin-film deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100840
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  • 6
    Electronic Resource
    Electronic Resource
    Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 998-1000 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarized internal reflection spectroscopy has been used to characterize HF-treated Si(111) surfaces. The silicon-hydrogen stretching vibrations indicate that the surface is well ordered, but is microscopically rough, with coupled monohydride, dihydride, and trihydride termination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100053
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  • 7
    Electronic Resource
    Electronic Resource
    Kinetic smoothening: Growth thickness dependence of the interface width of the Si(001)/SiO2 interface (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4746-4749 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using x-ray diffraction techniques, we measure the root-mean-square width of the buried crystalline/amorphous Si(001)/SiO2 interface, as a function of oxide thickness. We find that the interface width decreases with increasing oxide thickness; the oxide growth process kinetically smoothens the buried interface. We also find a difference between the rate of smoothing for wet and dry oxides. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359410
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  • 8
    Electronic Resource
    Electronic Resource
    Infrared-absorption spectroscopy of Si(100) and Si(111) surfaces after chemomechanical polishing (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1650-1658 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of silicon stock removal in chemomechanical polishing (CMP) is studied by characterizing surface chemical species with infrared-absorption measurements and the corresponding degree of hydrophobicity with contact angle measurements immediately after CMP. Surface properties and stock removal rates are found to depend strongly on the pH of the silica slurry used in this "syton polishing'' technique. At the peak of the removal rate [pH∼11 for both Si(100) and Si(111)], the surfaces have the highest hydrophobicity and the highest hydrogen coverage. Si(111) has an ideal monohydride termination, while Si(100) is characterized by a variety of hydrides (mono-, di-, and trihydrides), suggesting different morphologies for the surfaces: atomically flat domains on Si(111) and rougher areas on Si(100). Away from the optimum slurry pH (at lower stock removal rates), a higher concentration of hydroxyl groups is observed, increasing the surface hydrophilicity. At all pH, some oxidation occurs beneath the H-terminated Si surface, as evidenced by a characteristic frequency shift of oxygen-backbonded hydrides. The mechanisms of stock removal are considered in view of these observations for the different ranges of slurry pH. In particular, at the highest removal rates, an interplay of surface oxidation, removal of oxidized silicon, and subsequent H termination is suggested. Based on the spectroscopic characterization of surface morphologies, the relevance of CMP to prepare atomically smooth silicon surfaces is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360721
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  • 9
    Electronic Resource
    Electronic Resource
    Surface effects on carrier dynamics: photoconductivity studies on Si (111) (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4983-4990 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We correlate photoconductivity with surface characterization in order to probe the influence of different surface properties of Si (111) on electron-hole dynamics. Photoconductivity data show that the carrier recombination is influenced strongly by surface structure and chemistry as well as by trace imperfections which are undetectable by conventional surface characterization techniques. Results on the Si(111):As (1×1) surface indicate carrier recombination at this surface is negligible, in contrast to the (7×7) reconstructed surface, where surface recombination is fast, with a surface recombination velocity measured to be ≥2×106 cm/s. We also investigate the effect of sputter induced disorder and compare our finding with results from other techniques. Combining our results and the present understanding of the (7×7) electronic structure, we estimate the carrier capture cross section for dangling bonds to be ∼10−15 cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350597
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  • 10
    Electronic Resource
    Electronic Resource
    370 °C clean for Si molecular beam epitaxy using a HF dip (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 685-687 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a new low-temperature clean for Si molecular beam epitaxy. Growth is carried out on Si wafers subjected to an ≈10–60 s clean in a buffered HF solution prior to insertion in the growth chamber. We demonstrate low defect densities (〈105 cm−2) at 380 °C without either the conventional high-temperature cleaning step to desorb a chemical oxide or the use of a glovebox for chemical cleaning and transfer to the vacuum chamber. Wafers are given an ≈200 °C prebake in situ to remove hydrocarbons, and then raised to the growth temperature prior to deposition. For (100) substrates the transition from amorphous deposition to crystalline growth occurs at ≈370 °C, below the temperature at which hydrogen should desorb. On (111) the minimum temperature for epitaxy is ≈500 °C, as expected. We attribute this difference to the large number of undercoordinated Si atoms present on (100), which allows growth to take place even on the hydrogen-terminated surface. Secondary-ion mass spectrometry suggests that contamination levels at the substrate-epilayer interface using this HF dip are comparable to those for conventional ("Shiraki'') chemical oxide desorption techniques. Omission of the prebake step leads to a highly carbon-contaminated surface: this surface has the remarkable property that Si will grow epitaxially on it, but does not wet it (so that at high temperature Si/Si:C grows as islands).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105365
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