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  • 1
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    Tuning the Dirac point to the Fermi level in the ternary topological insulator (Bi1−xSbx)2Te3 (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-12-24
    Description: In order to stabilize Majorana excitations within vortices of proximity induced topological superconductors, it is mandatory that the Dirac point matches the Fermi level rather exactly, such that the conventionally confined states within the vortex are well separated from the Majorana-type excitation. Here, we show by angle resolved photoelectron spectroscopy that (Bi 1− x Sb x ) 2 Te 3 thin films with x  = 0.94 prepared by molecular beam epitaxy and transferred in ultrahigh vacuum from the molecular beam epitaxy system to the photoemission setup match this condition. The Dirac point is within 10 meV around the Fermi level, and we do not observe any bulk bands intersecting the Fermi level.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    A versatile platform for magnetostriction measurements in thin films (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-03-02
    Description: We present a versatile nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetoelastic stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e.g., by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. In a proof-of-principle experiment, we determine the magnetostriction constants of a 10 nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique aims, in particular, for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by, e.g., electron beam deposition, thermal evaporation, or sputtering.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
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    Sustainability, Vol. 10, Pages 3208: Development of an Ex-Ante Sustainability Assessment Methodology for Municipal Solid Waste Management Innovations (2018)
    MDPI Publishing
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    Publication Date: 2018-09-08
    Description: Sustainability, Vol. 10, Pages 3208: Development of an Ex-Ante Sustainability Assessment Methodology for Municipal Solid Waste Management Innovations Sustainability doi: 10.3390/su10093208 Authors: Jing Wang Stephanie D. Maier Rafael Horn Robert Holländer Ralf Aschemann Various municipal solid waste management (MSWM) innovations have emerged in developing countries in face of the challenges posed by increasing waste generation and poor MSWM practice. We present a methodology to assess the potential sustainability impact of MSWM innovations in a holistic manner. The Life Cycle Sustainability Analysis (LCSA) framework and the United Nations (UN) sustainable development goals (SDGs) facilitated the methodology development. The result of applying the methodology to the case of waste bank (WB) in Bandung City shows that WB potentially generates the greatest sustainability impact in the resource recovery phase and the smallest impact in the collection and final disposal phase. All negative impacts could arise in the economic dimension. Surprisingly, WB as a national strategy to achieve 3Rs would not effectively solve Bandung City’s landfill problem. Almost all SDGs would benefit from the WB program under the assumed conditions. This methodology will facilitate the decision-making in MSWM by (1) comparing available innovations to find the optimal solution, (2) identifying the hot spots and taking measures to combat the negative impacts, (3) providing the basis for monitoring the implementation process and the ex-post performance assessment.
    Electronic ISSN: 2071-1050
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Published by MDPI Publishing
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of Al interlayers on growth and magneto-optic properties of MnBi thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 196-201 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi/Mn/Al/Bi/Mn multilayers with different Al-interlayer thickness have been deposited on glass substrates at room temperature. The multilayers are not protected by a passivating layer, such as SiOx, in order to investigate the interplay between Al-interlayer thickness and homogeneity, granularity, and topography before and after annealing. Due to the Al interlayer, the diffusion across the Bi/Mn/Al/Bi/Mn stack was reduced as demonstrated by x-ray analysis, scanning electron microscopy, and Rutherford backscattering spectrometry. During annealing, two (MnxBi100−x)100−yAly layers are formed which are separated by an Al interlayer. After annealing, polar Kerr hysteresis loops as measured from the front side of the films show a superposition of two hysteresis loops, opposite in sign, with different coercive fields. The presence of different coercive fields is explained by different granularity of the top and bottom (MnxBi100−x)100−yAly layer. The coercive field of the top (MnxBi100−x)100−yAly layer reaches values up to 1.25 T, while the bottom layer shows a constant value of 0.3 T independent of the Al-interlayer thickness. The opposite sign of the two contributions to the Kerr loops is explained by the different relative index of refraction at the air/(MnxBi100−x)100−yAly and the Al/(MnxBi100−x)100−yAly interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362781
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of molecular hydrogen on Ge island nucleation on Si(001) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5113-5118 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of molecular hydrogen (H2) on the structural and optical properties of self-assembled Ge dots grown on Si(001) has been studied using atomic force microscopy and photoluminescence spectroscopy (PL). Without hydrogen, a well known bimodal island size distribution occurs with small {105} faceted pyramids, and larger multifaceted domes. In the presence of an additional H2 flow, we observe that a higher density of smaller pyramids and a lower density of domes occurs. Moreover, in the presence of hydrogen, PL investigations have revealed a thicker wetting layer thickness, probably due to a reduction of the surface diffusion length. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317245
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