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  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 104 (1982), S. 577-582 
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 186-188 (1993), S. 53-55 
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 196-201 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi/Mn/Al/Bi/Mn multilayers with different Al-interlayer thickness have been deposited on glass substrates at room temperature. The multilayers are not protected by a passivating layer, such as SiOx, in order to investigate the interplay between Al-interlayer thickness and homogeneity, granularity, and topography before and after annealing. Due to the Al interlayer, the diffusion across the Bi/Mn/Al/Bi/Mn stack was reduced as demonstrated by x-ray analysis, scanning electron microscopy, and Rutherford backscattering spectrometry. During annealing, two (MnxBi100−x)100−yAly layers are formed which are separated by an Al interlayer. After annealing, polar Kerr hysteresis loops as measured from the front side of the films show a superposition of two hysteresis loops, opposite in sign, with different coercive fields. The presence of different coercive fields is explained by different granularity of the top and bottom (MnxBi100−x)100−yAly layer. The coercive field of the top (MnxBi100−x)100−yAly layer reaches values up to 1.25 T, while the bottom layer shows a constant value of 0.3 T independent of the Al-interlayer thickness. The opposite sign of the two contributions to the Kerr loops is explained by the different relative index of refraction at the air/(MnxBi100−x)100−yAly and the Al/(MnxBi100−x)100−yAly interface. © 1996 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5929-5931 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polar Kerr-rotation spectra and hysteresis loops have been measured in Co1−x−yTbx(EuS)y, with 0≤x≤0.21 and 0≤y≤0.21, and compared to the macroscopic ferrimagnet Co1−y(EuS)y and to amorphous Co1−xTbx. The measurements were taken at room temperature and at 7 K over a wide photon energy range of 1.1–4.6 eV in fields up to 2.77 T. The addition of Tb retains the phase-separated nature yielding a material consisting of a Co–Tb matrix containing crystalline EuS precipitate particles with about 2 nm diameter. Up to 8% Tb is substituted for Eu in the EuS phase. The Kerr rotations are rather small reaching −0.25° at room temperature and increasing to −0.85° at 7 K, i.e., no optical enhancement is observed as in Co(EuS). This is most likely due to the much smaller size of the EuS crystallites. An "s''-shaped feature in the Kerr-rotation spectra can be assigned to an Eu2+ 4f→5d transition while a contribution from the Tb3+-4f states shows up as a decrease with increasing photon energies. At 7 K, the Tb and Eu magnetic moments are found to be parallel while the Co moment is believed to be antiferromagnetically exchange coupled to both. At room temperature, the Co moment is dominating the Tb moment which is antiferromagnetically coupled as in Co1−xTbx. © 1996 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6112-6114 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of (U-As)100−xCox alloys are prepared by magnetron sputtering over the entire composition range x and the polar Kerr rotation and magnetization are measured. The absolute value of the maximum Kerr rotation decreases rapidly from −0.48° for Co (x=100) to −0.09° for x=66 at 300 K. A similar decrease is observed at 10 K but at a slightly slower rate. The Kerr rotation as well as the magnetization are negligible at x(approximately-equal-to)50, indicating a suppression of the magnetic moments in Co and U, simultaneously. This result is explained in terms of filling in the Co 3d conduction band. At x≤30, U develops a magnetic moment at 10 K but Co does not seem to contribute to the magnetization for these compositions.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5391-5394 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We deposited (Mn/Bi)x bilayers (x=1,2,3) on clean glass substrates at room temperature and at 200 °C without using a protective SiOx layer in order to investigate the interaction between preparation conditions, homogeneity, granularity, and topography. During annealing at temperatures between 280 and 320 °C, no protective SiOx layer on top of the (Mn/Bi)x bilayers influences the formation of MnBi crystallites, i.e., the granularity. The coercive field of the resulting MnBi films is enhanced reaching values of up to 1.25 T. The large coercive fields indicate a single-domain MnBi crystallite size of only 0.2–0.3 μm, which is favorable for a possible application as a magneto-optic storage material. © 1995 American Institute of Physics.
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi/Mn bilayers have been deposited on fused-quartz substrates at room temperature and annealed at elevated temperatures of 300–380 °C. To investigate the influence of capping layers on MnBi crystallite size and magnetic properties, some of the Bi/Mn bilayers were protected by Al and SiOx layers. The coercive fields of the resulting MnBi films without a protective layer reach values of up to 1.25 T. In case of depositing an Al capping layers prior to annealing, the coercive fields are decreasing strongly showing coercive fields in the range of 0.6 T. In contrast, using SiOx as a capping layer, the Kerr hysteresis loops show a nonlinearity near the coercive field indicating an inhomogeneous film. The change in the coercive field is explained by the influence of capping layers on the MnBi crystallite size during annealing. © 1996 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6109-6111 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rocksalt structure solid solutions were prepared by coevaporating Eu2O3 and Tb metal. The films have the general formula Eu1−xTbxO1−y(D'Alembertian)y where y, the oxygen vacancy fraction, is given by y=(3x−1)/2. We have also prepared Tb-doped EuS solid solutions where y(approximately-equal-to)x so we can compare the effects of anion vacancies in both the oxide and sulfide systems. The coercivity, Hc, increases rapidly with Tb doping at about x=0.15 in the sulfide system and x=0.45 in the oxide system. The Hc of both systems falls on a universal curve, however, when plotted vs vacancies/RE ((D'Alembertian)/RE) with the rapid increase occurring at (D'Alembertian)/RE=0.15. This value is close to 1/6 (0.166) which in octahedral coordination corresponds to one anion vacancy/RE. This suggests that the near neighbor vacancy is producing a strong crystal field at the Tb site which causes strong single ion anisotropy and thus a high coercivity. The MO spectra of the oxides show a strong dependence on x. At x=0.25, peaks are observed at 1.5 eV (−3°), 2.2 eV (5.5°), and 2.7 eV (−2°). At x=0.33, the spectra change completely. A narrow peak with a rotation θK=−20° appears at 2.5 eV, dominating the spectrum. The reflectivity, R, goes through a sharp minimum at the same energy (R〈1%), possibly causing the enhancement in θK.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6386-6388 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of EuS have been doped with up to 34-at. % Tb by coevaporation. From lattice constant measurements we conclude that the films are defect rocksalt structure solid solutions with the general formula Eu1−xTbxS1−y(D'Alembertian)y, where (D'Alembertian) represents a vacancy. The magnetic properties change drastically between undoped films and the Tb substituted samples. The Curie point increases from 20 to about 135 K and the coercivity increases from 60 Oe to about 4 kOe in the x=0.34 sample. Our measurements indicate an increase in RKKY exchange because of the higher carrier concentration caused by Tb doping. The increased carrier density causes a decrease in resistivity of at least two orders of magnitude to about 10−3 Ω cm, the same order of magnitude as reported for bulk solid solutions of EuS-GdS. The peaks in the magneto-optic Kerr spectrum of EuS at about 2 eV are decreased in amplitude, broadened and shifted in energy with Tb doping.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5035-5037 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first magneto-optical Kerr-effect measurements at temperatures below 1 K on a magnetic superconductor. We have measured the complex polar Kerr effect at temperatures as low as 0.4 K and in magnetic fields from 0 to 12 T on sintered samples of Eu0.75Sn0.25Mo6S7.6Se0.4 and EuMo6S8. In addition, the near-normal reflectivity has been determined at room temperature in the energy range of 0.03–12 eV. Both compounds exhibit a Kerr spectrum dominated by intra–Eu f→d transitions. A small conduction-band contribution is detectable only in the Kerr rotation and not in the ellipticity. The maximum absolute Kerr rotation is very small and amounts to 0.19° and 0.13° at 2.25 eV for EuMo6S8 and Eu0.75Sn0.25Mo6S7.6Se0.4, respectively. In both compounds the crystal field splitting of the Eu-5d state is clearly visible and yields 0.9 eV. The total weight 〈σ2xy〉 per Eu2+ of the f→d transitions is a factor 5 smaller than in the europium chalcogenides, possibly due to a smaller overlap of the radial f and d wave functions. Field-dependent Kerr-rotation measurements up to 12 T at a temperature of 0.5 K show a substantial deviation from a Brillouin function.
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