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  • 1
    Electronic Resource
    Electronic Resource
    Investigation of the Substrate (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 47-48 (July 1995), p. 485-490 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.47-48.485.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    SIMS depth profiling of vertical p-channel Si-MOS transistor structures (1997)
    Springer
    Fresenius' journal of analytical chemistry 358 (1997), S. 203-207 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract SIMS depth profiling during O2 + bombardment has been performed to analyse epitaxially grown Si p-n-p layers, which define the p-channel region in vertical Si-p MOS transistors, as well as to establish “on-chip” depth profiling of the functional vertical device. The SIMS detection limit of 31P in Si, phosphorus used as n-type dopant in the transistor, has been optimised as a function of the residual gas pressure in the SIMS analysis chamber and of the sputter erosion rate. We demonstrate that good vacuum during SIMS analysis combined with high erosion rates allows the simultaneous quantitative SIMS depth profiling of n- and p-type dopant concentrations in the vertical transistor. Small area “on-chip” SIMS depth profiling through the layered structure of Al-contact/TiSi2/Si(p-n-p)/Si-substrate has been performed. Factors influencing the depth resolution during “on-chip” analysis of the transistor are discussed especially in terms of sputtering induced ripple formation at the erosion crater bottom, which has been imaged with atomic force microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160050384
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  • 3
    Electronic Resource
    Electronic Resource
    Vertical ordering of islands in Ge-Si multilayers (1996)
    Springer
    Applied physics 62 (1996), S. 575-579 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.16 Bg; 68.35.Bs; 68.55-.Jk; 85.42.+m
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Growth and ordering of GeSi islands in Ge-Si multilayer systems during deposition by Low-Pressure Chemical Vapour Deposition (LPCVD) at 700°C on Si (001) substrates have been investigated for different layer distances by transmission electron microscopy of cross-section and plane-view specimens. Vertical ordering of GeSi islands with almost perfect correlation is observed for distances between the Ge layers of $\leq$ 100 nm. At larger interlayer distances, a continuous decrease of the correlation is found. Vertical ordering in the multilayer system is modelled in terms of the elastic interaction between island nuclei in a newly forming layer and close islands in a buried layer below. Lateral ordering parallel to 〈100〉, as observed previously in larger Ge-Si multilayer systems is not found in our systems, consisting of two Ge layers. This difference indicates that lateral ordering in the upper Ge layers of a large multilayer system is triggered by vertical ordering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01571696
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of the valence band offset of Si/Si0.7Ge0.3/Si quantum wells using deep level transient spectroscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7427-7430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) was performed on p-isotype Si/SiGe/Si Schottky barrier diodes in order to obtain the valence band offset between Si and SiGe. A single strained Si0.7Ge0.3 layer was placed in such a depth in Si so as to be able to fill and empty the quantized SiGe well during the transient capacitance procedure. Broad capacitance transient peaks were obtained and interpreted as being due to the capture of holes by the quantum well. The broadness of the peaks was explained by thickness variations of the SiGe layer. From the dependence of the high temperature side of the DLTS peak on the rate window a valence band offset of 220±20 meV was evaluated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353984
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  • 5
    Electronic Resource
    Electronic Resource
    Temperature and strain dependence of the roughening transition in III-V semiconductor and SiGe epitaxial growth (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 811-816 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental and theoretical evidence is given for the occurrence of a temperature and strain dependent roughening transition from two dimensional (2-D) monolayer to 3-D island growth in strained III-V compound ternary alloys and GeSi. For sufficiently large strain energy values the shape of the transition curve was found to follow a T∼ε−2f relationship, as predicted from classical nucleation theory arguments, where T is the growth temperature and εf the areal misfit strain energy. The asymptotic behavior in the zero strain energy regime could be reproduced by an empirical curve of a more complex expression. The transition curve appears to separate routes of strain relief in the above systems, which were found to predominantly follow 3-D island formation in the higher, and misfit dislocation formation in the lower growth temperature/strain regime. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360270
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  • 6
    Electronic Resource
    Electronic Resource
    Determination of valence band offsets from Si/Si1−xGex/Si using temperature-dependent current–voltage characteristics (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2463-2466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have determined the valence band discontinuity ΔEv of strained Si1−xGex on unstrained (100) Si using temperature-dependent current–voltage characteristics (I–V-T) of Si/Si0.83Ge0.17/Si heterostructures. In a first step, the measurements were performed on a Schottky diode, and in a second step, on a sample with ohmic contacts. The values of ΔEv obtained by these two different procedures are comparable. Moreover, they are in good agreement with the theoretical value of ΔEv=0.84x=143 meV predicted by Van de Walle measurements. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361174
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  • 7
    Electronic Resource
    Electronic Resource
    Thermal hole emission from Si/Si1−xGex/Si quantum wells by deep level transient spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5439-5447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the determination of the valence band offset between strained Si1−xGex and unstrained Si layers by deep level transient spectroscopy (DLTS) on Si/Si1−xGex/Si quantum well (QW) structures. A problem of this technique is to store the holes long enough (≥1 ms) in the QW so that the thermal emission of holes is the dominating process. We achieved sufficiently long hole storage times by using two different structures. In the first ones, this is obtained by selective growth which leads to a lateral limitation of the smooth QW layer, and with good Schottky contacts. For the second ones, the localization of holes is due to the presence of Si1−xGex islands. For a sample containing a smooth QW with XGe=0.17 a valence band offset of 140±20 meV was obtained and for the island layer with XGe=0.3 a value of 258±20 meV was found. These results are in good agreement with theory. The DLTS measurements are compared to admittance spectroscopy results and photoluminescence measurements. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359658
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  • 8
    Electronic Resource
    Electronic Resource
    Growth of SiGe quantum wires and dots on patterned Si substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1959-1963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe/Si quantum well layers are selectively grown by low pressure chemical vapor deposition on patterned Si substrates. Transmission electron microscopy (TEM) shows that the growth rate of SiGe in convex corners between different surface planes is at least ten times higher than the growth rate observed on (001) planes. This high growth rate leads to the formation of quantum wires and dots between such facets. Photoluminescence (PL) spectra of square and rectangular patterns, bounded by quantum wires, ranging in size from 300μm down to 500nm are taken. The observed energy shifts of the (001) quantum well PL–peaks are explained by surface diffusion of Ge adatoms into the quantum wires. A surface diffusion model is used to obtain a Ge diffusion length of λ=2.5±0.6 μm at 700°C. Thus, a method for the determination of surface diffusion lengths in strained layer epitaxy is introduced. For SiGe layers grown above the Stranski–Krastanow critical thickness for three dimensional (3D) growth, a competition between the SiGe wires in the interfacet corners and the SK islands on the (001) planes is observed. In squares as large as 2×2 μm2 the SiGe wires lead to a suppression of 3D growth on the (001) plane altogether, as observed by TEM and PL. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358830
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  • 9
    Electronic Resource
    Electronic Resource
    Size distribution and electroluminescence of self-assembled Ge dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7275-7282 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we study the electroluminescence of p-i-n diode structures with Ge dots consisting of coherent three-dimensional small (pyramids) and larger (dome) islands. The Ge dots are formed through strain-induced islanding. The diode structures, including one layer with Ge dots, were deposited on Si mesas with variable areas in order to study the influence of limited area deposition on self-assembling. It was observed that the reduction of deposited area improves island uniformity. The combined analysis of island distribution and electroluminescence spectra has lead to the conclusion that domes in small diodes have a smaller Si content or are less relaxed than domes in larger diodes. The diodes are found to emit up to room temperature near the optical communication wavelength of 1.3 microns. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372980
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of molecular hydrogen on Ge island nucleation on Si(001) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5113-5118 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of molecular hydrogen (H2) on the structural and optical properties of self-assembled Ge dots grown on Si(001) has been studied using atomic force microscopy and photoluminescence spectroscopy (PL). Without hydrogen, a well known bimodal island size distribution occurs with small {105} faceted pyramids, and larger multifaceted domes. In the presence of an additional H2 flow, we observe that a higher density of smaller pyramids and a lower density of domes occurs. Moreover, in the presence of hydrogen, PL investigations have revealed a thicker wetting layer thickness, probably due to a reduction of the surface diffusion length. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317245
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